BUK9907-55ATE
Abstract: No abstract text available
Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9907-55ATE
BUK9907-55ATE
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7905
Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
Text: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and
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BUK71/7905-40ATE
BUK7105-40ATE
OT426
BUK7905-40ATE
OT263B
O-220)
7905
7905 datasheet
description of transistor 7905
7905 application note
7905 pin details
MA 7905
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Untitled
Abstract: No abstract text available
Text: BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 — 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS
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BUK91/9907-55ATE
BUK9107-55ATE
OT426
BUK9907-55ATE
OT263B.
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Untitled
Abstract: No abstract text available
Text: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7105-40ATE
BUK7105-40ATE
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MBL317
Abstract: BUK7907-55ATE ua2022
Text: BUK7907-55ATE TrenchPLUS standard level FET Rev. 02 — 16 July 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance, and TrenchPLUS
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BUK7907-55ATE
M3D745
BUK7907-55ATE
OT263B.
MBL317
ua2022
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BUK7107-55ATE
Abstract: No abstract text available
Text: BUK7107-55ATE TrenchPLUS standard level FET Rev. 01 — 29 July 2002 M3D322 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance, and diode for
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BUK7107-55ATE
M3D322
BUK7107-55ATE
OT426
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Untitled
Abstract: No abstract text available
Text: BUK7109-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7109-75ATE
BUK7109-75ATE
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Untitled
Abstract: No abstract text available
Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9907-55ATE
BUK9907-55ATE
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BUK7907-55ATE
Abstract: No abstract text available
Text: BUK7907-55ATE N-channel TrenchPLUS standard level FET Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7907-55ATE
BUK7907-55ATE
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BUK7109-75ATE
Abstract: No abstract text available
Text: BUK7109-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7109-75ATE
BUK7109-75ATE
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BUK7107-55ATE
Abstract: No abstract text available
Text: BUK7107-55ATE N-channel TrenchPLUS standard level FET Rev. 02 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7107-55ATE
BUK7107-55ATE
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BUK7909-75ATE
Abstract: No abstract text available
Text: BUK7909-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7909-75ATE
BUK7909-75ATE
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BUK9107-55ATE
Abstract: No abstract text available
Text: BUK9107-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9107-55ATE
BUK9107-55ATE
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Untitled
Abstract: No abstract text available
Text: BUK7909-75ATE N-channel TrenchPLUS standard level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7909-75ATE
BUK7909-75ATE
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BUK9107-55ATE
Abstract: BUK9907-55ATE SOT426
Text: BUK91/9907-55ATE TrenchPLUS logic level FET Rev. 01 — 7 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance and TrenchPLUS
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BUK91/9907-55ATE
BUK9107-55ATE
OT426
BUK9907-55ATE
OT263B.
SOT426
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BUK7907-55ATE
Abstract: buk7907
Text: BUK7907-55ATE TrenchPLUS standard level FET Rev. 01 — 24 January 2002 Product data M3D745 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on state resistance, and TrenchPLUS
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BUK7907-55ATE
M3D745
BUK7907-55ATE
OT263B.
buk7907
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Untitled
Abstract: No abstract text available
Text: BUK9107-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK9107-55ATE
BUK9107-55ATE
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BUK7905-40ATE
Abstract: No abstract text available
Text: BUK7905-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7905-40ATE
BUK7905-40ATE
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BUK7105-40ATE
Abstract: No abstract text available
Text: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7105-40ATE
BUK7105-40ATE
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BUK7109-75ATE
Abstract: BUK7909-75ATE
Text: BUK71/7909-75ATE TrenchPLUS standard level FET Rev. 01 — 12 August 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance and a TrenchPLUS
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BUK71/7909-75ATE
BUK7109-75ATE
OT426
BUK7909-75ATE
OT263B
O-220AB)
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Untitled
Abstract: No abstract text available
Text: BUK7107-55ATE N-channel TrenchPLUS standard level FET Rev. 02 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7107-55ATE
BUK7107-55ATE
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Untitled
Abstract: No abstract text available
Text: BUK7907-55ATE N-channel TrenchPLUS standard level FET Rev. 03 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for
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BUK7907-55ATE
BUK7907-55ATE
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