PHE13002AU
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13002AU
OT533
PHE13002AU
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PHB101NQ03LT
Abstract: PHD101NQ03LT PHP101NQ03LT PHU101NQ03LT
Text: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB
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PHP/PHU101NQ03LT
PHP101NQ03LT
O-220AB)
PHU101NQ03LT
OT533
OT533
MBB076
MBK106
PHB101NQ03LT
PHD101NQ03LT
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT151U series C Thyristors Product specification April 2004 1;3 Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications
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BT151U
BT151URepetitive
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500R
Abstract: 600R 800R BT150 BT258 BT258U BT151 Application note
Text: Philips Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced
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BT258U
OT533
BT258URepetitive
500R
600R
800R
BT150
BT258
BT151 Application note
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100C
Abstract: BUJ103AU
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ103AU
OT533
100C
BUJ103AU
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BUJ101AU
Abstract: 400V 10A NPN transistor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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BUJ101AU
OT533
BUJ101AU
400V 10A NPN transistor
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PHU2N50E
Abstract: 400 w self oscillating ballast Philips fluorescent ballast circuit ballast Self-Oscillating cfl Self-Oscillating SOT533 PHP2N50 UBA2021 40 w self oscillating ballast
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHU2N50E FEATURES QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
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PHU2N50E
PHU2N50E
UBA2021
400 w self oscillating ballast
Philips fluorescent ballast circuit
ballast Self-Oscillating
cfl Self-Oscillating
SOT533
PHP2N50
UBA2021
40 w self oscillating ballast
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PHU11NQ10T
Abstract: SOT533
Text: PHU11NQ10T TrenchMOS standard level FET Rev. 01 — 28 May 2002 Product data M3D445 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHU11NQ10T in SOT533 I-pak .
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PHU11NQ10T
M3D445
PHU11NQ10T
OT533
OT533,
MBB076
MBK915
SOT533
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BT258U series Thyristors logic level Product specification March 1999 NXP Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use
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BT258U
OT533
BT258URepetitive
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500C
Abstract: 650C BT145 BT151U
Text: Philips Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications
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BT151U
OT533,
BT151URepetitive
500C
650C
BT145
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buj103
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
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BUJ103AU
OT533
buj103
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transistor b 647 c
Abstract: PHE13003AU b 647 transistor
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13003AU
OT533
transistor b 647 c
PHE13003AU
b 647 transistor
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BT258U series Thyristors logic level Product specification March 1999 NXP Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use
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BT258U
BT258URepetitive
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BT151U series C Thyristors Product specification April 2004 1;3 Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring
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BT151U
OT533,
BT151URepetitive
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MB111
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced
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BT258U
BT258URepetitive
OT533
MB111
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A 673 transistor
Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.
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PHE13002AU
OT533
OT533
A 673 transistor
LB 122 NPN TRANSISTOR
SOT533
100pd
PHE13002AU
TRANSISTOR AH
SOT-533
transistor aa a
TRANSISTOR 106 d1
SILICON DIFFUSED POWER TRANSISTOR
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