HZG469
Abstract: PHN203
Text: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PHN203
M3D315
OT96-1
HZG469
PHN203
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GP 821
Abstract: BLT61 MS-012AA
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain
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M3D315
BLT61
OT96-1
MBK187
SCA57
125108/00/02/pp8
GP 821
BLT61
MS-012AA
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transistor bd139
Abstract: philips power transistor bd139 BD139 smd transistor zi
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency
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M3D315
BLT71/8
OT96-1
SCA55
127067/00/02/pp12
transistor bd139
philips power transistor bd139
BD139
smd transistor zi
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HZG336
Abstract: PHN103T 03ac29
Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 02 — 28 April 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features • TrenchMOS™ technology
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PHN103T
HZG336
PHN103T
03ac29
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SI4884
Abstract: MS-012AA
Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .
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SI4884
M3D315
SI4884
OT96-1
OT96-1,
MS-012AA
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PSMN038-100K
Abstract: No abstract text available
Text: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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PSMN038-100K
OT96-1
PSMN038-100K
OT96-1,
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UZZ7000T
Abstract: MV3008
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7000T Trigger amplifier with two wire current interface Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with two wire current interface FEATURES UZZ7000T
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M3D315
UZZ7000T
613520/01/pp8
UZZ7000T
MV3008
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si4800
Abstract: 03af85 MS-012AA Si4800 philips
Text: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .
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Si4800
M3D315
Si4800
OT96-1
OT96-1,
03af85
MS-012AA
Si4800 philips
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PHK12NQ03LT
Abstract: No abstract text available
Text: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance
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PHK12NQ03LT
M3D315
OT96-1
MBB076
PHK12NQ03LT
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UZZ7001T
Abstract: MLD402
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7001T Trigger amplifier with open collector output Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with open collector output FEATURES UZZ7001T PINNING • Differential input trigger amplifier
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M3D315
UZZ7001T
613520/01/pp8
UZZ7001T
MLD402
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BY206
Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW34
BY206
C102F
BZY88-C3V3
BLW34
BZY88C-3V3
100A-2RO-C-PX-50
uhf amplifier design Transistor
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BLW80
Abstract: transistor rf m 1104
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the
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BLW80
BLW80
transistor rf m 1104
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transistor D 2578
Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting
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BLW90
SC08a
transistor D 2578
BLW90
transistor Common Base configuration
transistor rf m 1104
4312 020 36640
transistor 4312
philips carbon film resistor
UHF TRANSISTOR
UHF transistor GHz
philips transistor handbook
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PHK5NQ15T
Abstract: No abstract text available
Text: PHK5NQ15T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 SO8 .
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PHK5NQ15T
M3D315
PHK5NQ15T
OT96-1
OT96-1,
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PHK12NQ10T
Abstract: No abstract text available
Text: PHK12NQ10T TrenchMOS standard level FET Rev. 01 — 15 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounting package
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PHK12NQ10T
M3D315
OT96-1
PHK12NQ10T
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PHK24NQ04LT
Abstract: No abstract text available
Text: PHK24NQ04LT TrenchMOS logic level FET Rev. 01 — 12 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK24NQ04LT in SOT96-1 SO8 .
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PHK24NQ04LT
M3D315
PHK24NQ04LT
OT96-1
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MDA380
Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLU99
BLU99/SL
BLU99
OT122A)
BLU99/SL
MDA380
4312 020 36642
MDA385
TRANSISTOR SL 100
"2222 352"
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PHK13N03LT
Abstract: 11611
Text: PHK13N03LT TrenchMOS logic level FET M3D315 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK13N03LT in SOT96-1 SO8 .
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PHK13N03LT
M3D315
PHK13N03LT
OT96-1
11611
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HZG469
Abstract: Si9410DY
Text: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching
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Si9410DY
M3D315
OT96-1
MBK187
MBB076
HZG469
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MS-012AA
Abstract: PHK12NQ03LT
Text: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .
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PHK12NQ03LT
M3D315
PHK12NQ03LT
OT96-1
OT96-1,
MS-012AA
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PSMN085-150K
Abstract: No abstract text available
Text: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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PSMN085-150K
OT96-1
PSMN085-150K
OT96-1,
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PSMN005-30K
Abstract: No abstract text available
Text: PSMN005-30K TrenchMOS logic level FET Rev. 01 — 6 March 2002 Product data 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package. Product availability:
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PSMN005-30K
OT96-1
PSMN005-30K
OT96-1,
MBK187
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DC TO DC convertor
Abstract: PSMN165-200K
Text: PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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PSMN165-200K
OT96-1
PSMN165-200K
OT96-1,
DC TO DC convertor
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Si9410DY
Abstract: No abstract text available
Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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Si9410DY
M3D315
OT96-1
OT96-1,
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