HZG336
Abstract: PHN103T 03ac29
Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 02 — 28 April 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features • TrenchMOS™ technology
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PHN103T
HZG336
PHN103T
03ac29
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03ac29
Abstract: HZG336 MS-012AA PHN103T
Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .
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PHN103T
PHN103T
OT96-1
OT96-1,
03ac29
HZG336
MS-012AA
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BS-P0303
Abstract: Royal Electronics DATASHEET BSP030 BSP030 HZG336 SC-73 03ac29
Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.
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BSP030
BSP030
OT223.
OT223,
BS-P0303
Royal Electronics
DATASHEET BSP030
HZG336
SC-73
03ac29
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Untitled
Abstract: No abstract text available
Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.
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Original
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BSP030
BSP030
OT223.
OT223,
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Untitled
Abstract: No abstract text available
Text: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.
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Original
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PDF
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BSP030
BSP030
OT223.
OT223,
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