PSMN4
Abstract: No abstract text available
Text: TO -2 20F PSMN4R6-100XS N-channel 100V 4.6 mΩ standard level MOSFET in TO220F SOT186A Rev. 1 — 3 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial,
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PSMN4R6-100XS
O220F
OT186A)
PSMN4
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Untitled
Abstract: No abstract text available
Text: BUK762R0-40C N-channel TrenchMOS standard level FET Rev. 02 — 20 August 2007 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using Philips Ultra High-Performance Automotive (UHP) TrenchMOS technology.
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BUK762R0-40C
BUK762R0-40C
771-BUK762R0-40C
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771-BUK7215-55A118
Abstract: No abstract text available
Text: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7215-55A
771-BUK7215-55A118
BUK7215-55A
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MBK10
Abstract: No abstract text available
Text: PSMN015-100P/100B N-channel TrenchMOS Standard level FET Rev. 05 — 14 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.
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PSMN015-100P/100B
OT404
771-PSMN015-100P
PSMN015-100P
MBK10
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PMV213SN
Abstract: PMV213
Text: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.
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PMV213SN
M3D088
PMV213SN
MBB076
MSB003
771-PMV213SN215
PMV213
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BSS138PW
Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
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BSS138PW
OT323
SC-70)
AEC-Q101
771-BSS138PW115
BSS138PW
TRANSISTOR SMD CODE PACKAGE SOT323
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 18 February 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN3R0-30YLD
LFPAK56
LFPAK56
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PHB66NQ03LT
Abstract: PHD66NQ03LT
Text: PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 — 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHB66NQ03LT
PHB66NQ03LT
PHD66NQ03LT
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BUK9Y14-40B
Abstract: No abstract text available
Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This
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BUK9Y14-40B
BUK9Y14-40B
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2N7002F
Abstract: 2N7002F_2
Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible
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2N7002F
mbb076
2N7002F
2N7002F_2
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JESD625-A
Abstract: PMZ760SN SC-101
Text: PMZ760SN N-channel TrenchMOS standard level FET Rev. 02 — 12 July 2007 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features
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PMZ760SN
PMZ760SN
JESD625-A
SC-101
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BUK75
Abstract: BUK754R3-75C BUK7E4R3-75C
Text: BUK754R3-75C; BUK7E4R3-75C N-channel TrenchMOS standard level FET Rev. 01 — 10 August 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package, using Philips Ultra High-Performance (UHP) automotive TrenchMOS technology.
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BUK754R3-75C;
BUK7E4R3-75C
7E4R3-75C
BUK75
BUK754R3-75C
BUK7E4R3-75C
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55A4
Abstract: BUK98150-55A SC-73
Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK98150-55A
BUK98150-55A
55A4
SC-73
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PHU97NQ03LT
Abstract: No abstract text available
Text: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.
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PHU97NQ03LT
PHU97NQ03LT
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PH3120L
Abstract: 10S100
Text: PH3120L N-channel TrenchMOS logic level FET Rev. 03 — 30 March 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH3120L
PH3120L
10S100
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PHP75NQ08T
Abstract: No abstract text available
Text: PHP75NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHP75NQ08T
PHP75NQ08T
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BUK75
Abstract: BUK753R4-30B BUK763R4-30B
Text: BUK753R4-30B; BUK763R4-30B N-channel TrenchMOS standard level FET Rev. 01 — 5 January 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS technology.
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BUK753R4-30B;
BUK763R4-30B
BUK75
BUK753R4-30B
BUK763R4-30B
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buk9520-100b
Abstract: c774
Text: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9520-100B
AEC-Q101
buk9520-100b
c774
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Untitled
Abstract: No abstract text available
Text: BUK725R0-40C N-channel TrenchMOS standard level FET Rev. 01 — 23 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level gate drive N-channel enhancement mode Field-Effect Transistor FET in a plastic package using advanced TrenchMOS technology. This product has been designed
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BUK725R0-40C
BUK725R0-40C
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PSMN8R0-40PS
Abstract: No abstract text available
Text: PSMN8R0-40PS N-channel 40 V 7.6 mΩ standard level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN8R0-40PS
PSMN8R0-40PS
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BUK9620-100B
Abstract: c778 c776 BUK9620 10S100
Text: BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK9620-100B
AEC-Q101
BUK9620-100B
c778
c776
BUK9620
10S100
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BUK7Y13-40B
Abstract: automotive abs 10S100
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y13-40B
BUK7Y13-40B
automotive abs
10S100
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BUK7608-40B_4
Abstract: BUK75 BUK7608-40B
Text: BUK7608-40B N-channel TrenchMOS standard level FET Rev. 04 — 24 September 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7608-40B
BUK7608-40B_4
BUK75
BUK7608-40B
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BUK7880-55A
Abstract: SC-73
Text: BUK7880-55A N-channel TrenchMOS standard level FET Rev. 01 — 1 November 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.
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BUK7880-55A
BUK7880-55A
SC-73
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