BLY89C
Abstract: MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLY89C
SC08a
BLY89C
MSB056
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c 129 transistor
Abstract: BLU86 SMD ic catalogue
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU86 UHF power transistor Product specification September 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile
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BLU86
OT223
c 129 transistor
BLU86
SMD ic catalogue
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MRA359
Abstract: MDA536 BLV103 MRA364
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal matching for an optimum wideband capability and high gain • Emitter-ballasting resistors for
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BLV103
MRA359
MDA536
BLV103
MRA364
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SOT123 Package
Abstract: 4312 020 36640 transistor Common Base configuration Q 371 Transistor SOT123 BLV20 BR 8 TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLV20
SC08a
SOT123 Package
4312 020 36640
transistor Common Base configuration
Q 371 Transistor
SOT123
BLV20
BR 8 TRANSISTOR
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BLV20
Abstract: 4312 020 36640
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV20 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f.
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BLV20
BLV20
4312 020 36640
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MGP420
Abstract: BFQ42 transistor M 839 mgp41 MGP424 BLW29 MSB056
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW29 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters
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BLW29
BFQ42
MGP420
transistor M 839
mgp41
MGP424
BLW29
MSB056
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mrc102
Abstract: MRC100 mrc101 MRC103 BLV194
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV194 UHF power transistor Product specification January 1993 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures
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Original
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BLV194
OT171
mrc102
MRC100
mrc101
MRC103
BLV194
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MRB11040W
Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an
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FO-67
MRB11040W
0G4b32M
T-33-13
711002b
0D4b32fl
MRB11040W
QQHb32b
International Power Sources
NPN Silicon Epitaxial Planar Transistor
copper permittivity
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bf241
Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
Text: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA
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BF240
BF241
GD42m4
bf241
BF241 TO92
bF240 transistor
bf241_
BF241 Philips
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Untitled
Abstract: No abstract text available
Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.
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BCW31
BCW32
BCW33
bhS3T31
0Q245b7
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Untitled
Abstract: No abstract text available
Text: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848
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QQ24453
BC846
BC847
BC848
OT-23
QQ244S7
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Untitled
Abstract: No abstract text available
Text: PMBT5550 _ / v _ SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT-23 package. Q UICK REFERENCE D A T A Collector-base voltage open emitter
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PMBT5550
OT-23
OT-23.
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Untitled
Abstract: No abstract text available
Text: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.
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BF721
BF723
BF720
BF722
bbS3T31
0024b75
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile
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BLU56
bbS3T31
002AA53
MCB030
MC8027
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Untitled
Abstract: No abstract text available
Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.
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Q0EMS73
bbS3031
003457b
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bb53T31 QDBflOB? 3^B PH2222 PH2222A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 envelopes, primarily intended for switching and linear applications. QUICK REFERENCE DATA PH2222 PH2222A v CBO
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bb53T31
PH2222
PH2222A
1N916.
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE J> bbS3^31 DOSfiOSfl Tbb IAPX PN3439 P N 3440 l SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors in a TO-92 envelope and intended for use in telephony and professional communication equipment.
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PN3439
PN5415/5416.
PN3440
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Untitled
Abstract: No abstract text available
Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures
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BLT81
OT223
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jc33725
Abstract: JC337 JC337-25 JC337A jc33740 TO600 JC327 JC327A JC328 JC337-16
Text: • JC337 JC337A JC338 bbSBTai □□27c1b2 73fi HIAPX N AMER PHILIPS/DISCRETE b'ÌE ]> SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The JC337, JC337A, JC338 are complementary to the JC327, JC327A and JC328 respectively.
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JC337
JC337A
JC338
JC337,
JC337A,
JC338
JC327,
JC327A
JC328
JC337
jc33725
JC337-25
JC337A
jc33740
TO600
JC327
JC337-16
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bs33
Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
Text: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages
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BDV67AF/67BF/67CF/67DF
BDV66AF/66BF/66CF/66DF.
OT199
BDV67AF
BDV67BF
BDV67CF
BDV67DF
bs33
ZH09
NPN POWER DARLINGTON TRANSISTORS
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IC 651
Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
Text: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a
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BDS643/645/647/649/651
OT223,
BDS644/646/648/650/652.
-SOT223
BDS643
BDS645
BDS647
BDS649
BDS651
IC 651
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PDF
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BSR13
Abstract: BSR14 CBO10
Text: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA
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711Qaeb
BSR13
BSR14
BSR13
BSR14
7Z82486
7Z82484
CBO10
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transistor B42
Abstract: No abstract text available
Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits
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RZB06050W
711DfiEti
711Dfl2b
transistor B42
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pj 929 diode picture
Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits
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BA481
SAA7197
SAA7199B
TDA4680
TDA4685
pA733C
LFC02
MEH469
pj 929 diode picture
bf471
A7R SMD Transistor
TDA8391
transistor f488
tda8351 pin-compatible
tda1000
Germanium drift transistor
marking 3U 3T 3C diode
germanium transistor
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