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    transistor p04

    Abstract: P-12 P04 transistor p06 transistor sdip8
    Text: MB95F210H ESD Vcc ref. SDIP8 1 MM VESD = ±300V C = 200pF R = 0Ω Ta = 25℃ 1-1 VCC ref. | VESD (V) | 300 250 200 150 100 50 P06/INT06 P12/EC0 P05/INT05 P06/INT06 P12/EC0 P05/INT05 P06/INT06 P12/EC0 P05/INT05 P06/INT06 P12/EC0 P05/INT05 P04/INT04 P04/INT04


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    PDF MB95F210H 200pF P06/INT06 P12/EC0 P05/INT05 transistor p04 P-12 P04 transistor p06 transistor sdip8

    78P12

    Abstract: No abstract text available
    Text: MB95F210H Latch up DC SOP8 Supply voltage : 5.5 V Max. applied voltage : | 12 | V Fc : 4 MHz Ta : 25 ℃ Applied voltage [V] •:Latch-up 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 Cpin 6 7 8 P12/EC0 VCC 5 P06/INT06 VSS 4 P05/INT05 3 P04/INT04


    Original
    PDF MB95F210H P12/EC0 P06/INT06 P05/INT05 P04/INT04 78P12

    sdip8

    Abstract: No abstract text available
    Text: MB95F210H Latch up DC SDIP8 Supply voltage : 5.5 V Max. applied voltage : | 12 | V Fc : 4 MHz Ta : 25 ℃ Applied voltage [V] •:Latch-up 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 Cpin 6 7 8 P12/EC0 VCC 5 P06/INT06 VSS 4 P05/INT05 3 P04/INT04


    Original
    PDF MB95F210H P12/EC0 P06/INT06 P05/INT05 P04/INT04 sdip8

    transistor p04

    Abstract: P04 transistor transistor p06 p06 transistor P-12
    Text: MB95F210H ESD Vcc ref. SOP8 1 MM VESD = ±300V C = 200pF R = 0Ω Ta = 25℃ 1-1 VCC ref. | VESD (V) | 300 250 200 150 100 50 P06/INT06 P12/EC0 P05/INT05 P06/INT06 P12/EC0 P05/INT05 P06/INT06 P12/EC0 P05/INT05 P06/INT06 P12/EC0 P05/INT05 P04/INT04 P04/INT04


    Original
    PDF MB95F210H 200pF P06/INT06 P12/EC0 P05/INT05 transistor p04 P04 transistor transistor p06 p06 transistor P-12