Untitled
Abstract: No abstract text available
Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.
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MB85R2001/MB85R2002
A0-16
MB85RS256
256K-bit
MB85R4xxx
MB85R2001
MB85R2002
MB85R1001
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FPT-48P-M25
Abstract: MB85R2002 MB85R2002PFTN-GE1
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-3Ea Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13108-3Ea
MB85R2002
MB85R2002
FPT-48P-M25
MB85R2002PFTN-GE1
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-5E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13108-5E
MB85R2002
MB85R2002
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MB85R2002
Abstract: MB85R2002PFTN-GE1
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-2E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13108-2E
MB85R2002
MB85R2002
F0709
MB85R2002PFTN-GE1
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-4E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13108-4E
MB85R2002
MB85R2002
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13108-1E Memory FRAM CMOS 2 M Bit 128 K x 16 MB85R2002 • DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
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DS05-13108-1E
MB85R2002
MB85R2002
F0704
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s29gl032n90
Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
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covPG00-00071e
PG00-00071-2E
s29gl032n90
MB15H121
S29GL064N90
s29gl256p90
S29GL01GP13
S29GL128P90
MB86A20
S29AL008J55
S29AL016J55
s29gl128p11
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