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    MB85R2001 Search Results

    MB85R2001 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB85R2001 Fujitsu Memory FRAM CMOS 2 M Bit (256 K x 8) Original PDF
    MB85R2001PFTN-GE1 Fujitsu Memory FRAM CMOS 2 M Bit (256 K x 8) Original PDF

    MB85R2001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Products MB85R2001/MB85R2002 Ferroelectric Memory 2M-bit x8/×16 FRAM MB85R2001/MB85R2002 This product is a non-volatile ferroelectric memory FRAM with high-speed writing, 10 billion read/write cycles, and low power consumption. FUJITSU commenced mass-production of largest capacity 2M-bit FRAM.


    Original     		PDF MB85R2001/MB85R2002 A0-16 MB85RS256 256K-bit MB85R4xxx MB85R2001 MB85R2002 MB85R1001

    Fujitsu IR c code

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-4E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-4E MB85R2001 MB85R2001 Fujitsu IR c code

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-1E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-1E MB85R2001 MB85R2001 F0704

    FUJITSU FRAM

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-5E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-5E MB85R2001 MB85R2001 FUJITSU FRAM

    MB85R2001PFTN-GE1

    Abstract: MB85R2001
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13107-3Ea Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-3Ea MB85R2001 MB85R2001 MB85R2001PFTN-GE1

    MB85R2001

    Abstract: MB85R2001PFTN-GE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13107-2E Memory FRAM CMOS 2 M Bit 256 K x 8 MB85R2001 • DESCRIPTIONS The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words x 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.


    Original     		PDF DS05-13107-2E MB85R2001 MB85R2001 F0709 MB85R2001PFTN-GE1

    s29gl032n90

    Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
    Text: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,


    Original     		PDF covPG00-00071e PG00-00071-2E s29gl032n90 MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11