Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11229-4E MEMORY Unbuffered 1 M x 64 BIT HYPER PAGE MODE DRAM SO-DIMM MB8501E064AB-60/-70/-60L/-70L 144-pin, 1 M × 64 Bit Hyper Page Mode SO-DIMM, 3.3 V, 1-bank, 4 KR • DESCRIPTION The Fujitsu MB8501E064AB is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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Original
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DS05-11229-4E
MB8501E064AB-60/-70/-60L/-70L
144-pin,
MB8501E064AB
MB81V16165A
144-pin
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PDF
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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Original
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY Unbuffered 1 M X 64 BIT HYËER PAGE MODE DRAM SO-DIMM 01 0 6 4 A B -6 0 /-7 0 /-6 0 144-pin, 1 M x 64 Bit Hyper Page Mode SO-DIMM, 3.3 V, 1-bank, 4 KR DESCRIPTION The Fujitsu MB8501E064AB is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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OCR Scan
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144-pin,
MB8501E064AB
MB81V16165A
144-pin
F9707
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PDF
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CMOS 4032
Abstract: 2448
Text: DRAM Modules 2 • DRAM Modules - Low Voltage Versions (CMOS) Vcc - +3.3V±0.3V, Ta=0°C to +70C 'C Organization (Wxb) Part Number Mounted Devices x number <Package> Operating Standby Mode (CMOS level) Package MB8501E064AA-60 MB8501E064AA-70 MB81V18165A x4
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OCR Scan
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MB81V18165A
MB81V16165A
144Pin
MB8501E064AA-60
MB8501E064AA-70
MB8501EQ64AA-60L
MB8501E064AA-70L
MB8501E064AB-60
MB8501E064AB-70
CMOS 4032
2448
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PDF
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