MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: Zener Diodes MAZT000H Series Silicon planar type 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Unit : mm For surge absorption circuit 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5° (0.375) 1.60±0.05 0.85+0.05 –0.03 2 (0.80) 1 0.27±0.02 0.70+0.05 –0.03 • For surge absorption circuit
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MAZT000H
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Untitled
Abstract: No abstract text available
Text: ESD Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 0.44 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Power dissipation PD : 150 mW (0.80) 3 • Features 0.28±0.05 (0.51)
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SC-81
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IEC1000-4-2
Abstract: MAZT062H MAZT068H MAZT082H MAZT100H MAZT120H SC-89 PANASONIC ZENER
Text: ESD Diodes MAZT000H Series Silicon planar type Unit: mm 0.28±0.05 0.80±0.05 0.44 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Ptot = 150 mW (0.80) 3 • Features 0.28±0.05 (0.51) (0.51) (0.80) (0.80)
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MAZT000H
SC-89
IEC1000-4-2
MAZT062H
MAZT068H
MAZT082H
MAZT100H
MAZT120H
SC-89
PANASONIC ZENER
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6.8z
Abstract: MARKING 62Z RZ MARKING MAZ9062H MAZ9068H MAZ9082H MAZL062H MAZL068H MAZT062H MAZT082H
Text: 品 新 製 ESD保護用ダイオード MAZ9/MAZL/MAZT/MAZZシリーズ • 概 要 保護用 ダイオードです。3端子5端子の小型パッケージの採用により実装面積の大幅な削減が可能です。
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MAZ9/MAZL/MAZT/MAZZ24ESD
150mWS3/5
200mW
150mW
MAZT062H
MAZZ062H
MAZ9062H
6.8z
MARKING 62Z
RZ MARKING
MAZ9062H
MAZ9068H
MAZ9082H
MAZL062H
MAZL068H
MAZT062H
MAZT082H
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6.8z
Abstract: MAZT056H IEC1000-4-2 MAZT062H MAZT068H MAZT082H MAZT100H MAZT120H
Text: ESD Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 0.44 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Power dissipation PD : 150 mW (0.80) 3 • Features 0.28±0.05 (0.51)
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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marking code 62z
Abstract: MAZT082HG MAZT062HG IEC1000-4-2 MAZT068HG MAZT100HG MAZT120HG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxHG Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Features ■ Package • Two elements anode-common type • Power dissipation PD : 150 mW
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2002/95/EC)
marking code 62z
MAZT082HG
MAZT062HG
IEC1000-4-2
MAZT068HG
MAZT100HG
MAZT120HG
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IEC1000-4-2
Abstract: MAZT062H MAZT068H MAZT082H MAZT100H MAZT120H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 0.12+0.05 –0.02 (0.44) For surge absorption circuit 0.88+0.05 –0.03 3˚ 1.60±0.05 (0.44) 1 2 0.28±0.05 (0.51)
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SC-81
IEC1000-4-2
MAZT062H
MAZT068H
MAZT082H
MAZT100H
MAZT120H
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 (0.80) M Di ain sc te on na tin nc ue e/ d • Two elements anode-common type
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ M Di ain sc te on na tin nc ue e/ d 0.28±0.05 (0.51) (0.51) (0.80) (0.80)
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IEC1000-4-2
Abstract: MAZT062HG MAZT068HG MAZT082HG MAZT100HG MAZT120HG marking code 62z
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxHG Series Silicon planar type For surge absorption circuit • Features ■ Package • Two elements anode-common type • Power dissipation PD : 150 mW Th an W is k y Th e a pro ou
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IEC1000-4-2
MAZT062HG
MAZT068HG
MAZT082HG
MAZT100HG
MAZT120HG
marking code 62z
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zener diode SMD marking code 27 4F
Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C
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zener diode SMD marking code 27 4F
smd diode schottky code marking 2F
smd zener diode code 5F
panasonic MSL level
smd zener diode code a2
SMD ZENER DIODE a2
smd zener 27 2f
SMD zener marking code 102
A2 SMD
zener SMD MARK A1
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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IEC1000-4-2
Abstract: MAZT062H MAZT068H MAZT082H MAZT100H MAZT120H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxH Series Silicon planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 • Two elements anode-common type • Power dissipation PD : 150 mW
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IEC1000-4-2
MAZT062H
MAZT068H
MAZT082H
MAZT100H
MAZT120H
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxHG Series Silicon planar type For surge absorption circuit • Features M Di ain sc te on na tin nc ue e/ d ■ Package • Two elements anode-common type • Power dissipation PD : 150 mW
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ma4300 zener
Abstract: MA3330 ma4020 MA4360 MA2430 ma4024 MA327 MA2560 MA8150 ma4120
Text: Zener Voltage Quick Reference Table • Zener Diodes Application・ Series Zener Voltage VZ V General-Purpose MAZ2000 Series * PD =1 W (DO-41-A1) MAZ3000 Series * MAZ4000 Series * MAZ7000 Series * = 200 mW (P Mini3-G1 ) = 370 mW (P DO-34-A2 ) = 800 mW (P DO-41-A2
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MAZ2150
MA2150)
MAZ2160
MA2160)
MAZ2180
MA2180)
MAZ2200
MA2200)
MAZ2220
MA2220)
ma4300 zener
MA3330
ma4020
MA4360
MA2430
ma4024
MA327
MA2560
MA8150
ma4120
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