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    MAXIMUM IDSS TRANSISTOR Search Results

    MAXIMUM IDSS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MAXIMUM IDSS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sk1060

    Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
    Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104


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    2SK104 2SK105 2SK162 2SK163 2SK193 2SK195 2SK505 X10679EJCV0SG00 1996P 2sk1060 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK80F08K3 Swiching Regulator Low leakage current: IDSS = 10 A (max) (VDS = 75 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)


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    TK80F08K3 PDF

    fp31ff

    Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
    Text: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain


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    FP31QF FP31QF 1-800-WJ1-4401 fp31ff transistor 131 349 2110 FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm PDF

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


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    LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel PDF

    2SK2701A

    Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)


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    2SK2420 2SK2701A 2SK2803 2SK2848 2SK2943 2SK3003 2SK3004 2SK3199 2SK3710 2SK3711 FKv550n 2SK3801 fkv575 PDF

    FKV550N

    Abstract: No abstract text available
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)


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    2SK1188 2SK2420 2SK2701A 2SK2778 2SK2779 2SK2803 2SK2848 2SK2943 2SK3003 2SK3004 FKV550N PDF

    fkp*253

    Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS


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    2SK1179 2SK1183 2SK1188 2SK2419 2SK2420 2SK2701 2SK2702* 2SK2704 2SK2707* 2SK2709 fkp*253 fkv550n FKV550T FKP280 2SK2710a fkv550 PDF

    2sk30

    Abstract: FKv550n 2SK3003 2SK3199 2SK2778
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)


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    2SK2420 2SK2701A 2SK2778 2SK2779 2SK2803 2SK2848 2SK2943 2SK3003 2SK3004 2SK3199 2sk30 FKv550n PDF

    FKv550n

    Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
    Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)


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    2SK2701A 2SK2778 2SK2779 2SK2803 O-220S 95MAX FKv550n FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711 PDF

    TRANSISTOR 187

    Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
    Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60


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    2SJ424 2SJ425 2SK1177 2SK1179 2SK1180 2SK1181 2SK1183 2SK1184 2SK1185 2SK1186 TRANSISTOR 187 fkv550 2sk2943 2SK3460 2SK2710a 2SK3724 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Transistor MMBF5484LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current


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    MMBF5484LT1 236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10


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    MMBF4416LT1 236AB) PDF

    MMBF4416LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10


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    MMBF4416LT1 236AB) r14525 MMBF4416LT1/D MMBF4416LT1 PDF

    MMBF5484LT1

    Abstract: TO-236A
    Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current


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    MMBF5484LT1 236AB) r14525 MMBF5484LT1/D MMBF5484LT1 TO-236A PDF

    Diode Gfg 6f

    Abstract: MMBF5484LT1
    Text: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current


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    MMBF5484LT1/D MMBF5484LT1 MMBF5484LT1/D* Diode Gfg 6f MMBF5484LT1 PDF

    MMBF4416LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10


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    MMBF4416LT1 236AB) MMBF44spanish r14525 MMBF4416LT1/D MMBF4416LT1 PDF

    MMBF5484LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below


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    MMBF5484LT1 236AB) r14525 MMBF5484LT1/D MMBF5484LT1 PDF

    MMBF4416LT1

    Abstract: MMBF4416LT1G FR 220
    Text: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage


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    MMBF4416LT1 OT-23 O-236) MMBF4416LT1/D MMBF4416LT1 MMBF4416LT1G FR 220 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below


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    MMBF5484LT1 MMBF5484LT1/D PDF

    MMBF5484

    Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
    Text: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below


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    MMBF5484LT1 MMBF5484LT1/D MMBF5484 MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007 PDF

    Untitled

    Abstract: No abstract text available
    Text: V E R Y LOW R o n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 LOW R os - IS Ohms MAXIMUM LOW Vp - 3 Volte MAXIMUM HIGH IDSS - 30 mA MINIMUM ELECTRICAL DATA A B SO L U T E M A X IM U M R A T IN G S PARAM ETER Drain to Gate Voltage


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    CM697 PDF

    Untitled

    Abstract: No abstract text available
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE


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    BC264A BC264B BC264C BC264D BF246A O-92DE O-92DA PDF

    2n5248

    Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE


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    BC264A O-92DE BC264B BC264C BC264D BF246A O-92DA 2n5248 BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 PDF

    TO-92DD

    Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
    Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min


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    BC264A O-92DE BC264B BC264C T092DE BC264D BF246A O-92DA TO-92DD BF246B BF246C BF247A BF247B PDF