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    MATSUSHITA TRANSISTOR HFE CLASSIFICATION MARKING Search Results

    MATSUSHITA TRANSISTOR HFE CLASSIFICATION MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MATSUSHITA TRANSISTOR HFE CLASSIFICATION MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5993

    Abstract: c5993 matsushita Transistor hFE CLASSIFICATION Marking SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE NPN Silicon Epitaxial Planar Transistor
    Text: 製品規格／Product Specification 品 種 名／Type Number ： ２ＳＣ５９９３□□□□□ №1 №2 №3 №4 №5 DESIGNED CHECKED CHECKED I.NAKATA K.HIKIDA H.YAMANAKA 等価回路／Equivalent circuit 種別／Type シリコントランジスタ／Silicon Transistor


    Original     		PDF 2SC5993 2SC5993 c5993 matsushita Transistor hFE CLASSIFICATION Marking SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE NPN Silicon Epitaxial Planar Transistor

    2SA2140

    Abstract: 2.T transistor planar matsushita Transistor hFE CLASSIFICATION Marking
    Text: 製品規格／Product Specification 品 種 名／Type Number ： ２ＳＡ２１４０□□□□□ №1 №2 №3 №4 №5 DESIGNED CHECKED CHECKED I.NAKATA K.HIKIDA H.YAMANAKA 等価回路／Equivalent circuit 種別／Type シリコントランジスタ／Silicon Transistor


    Original     		PDF 2SA2140 2SA2140 2.T transistor planar matsushita Transistor hFE CLASSIFICATION Marking

    2SD1512

    Abstract: No abstract text available
    Text: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Ta=25˚C Parameter Symbol Ratings Unit 100 V 100 V 15 V 50 mA 20


    Original     		PDF 2SD1512 2SD1512

    2SC4809

    Abstract: matsushita Transistor hFE CLASSIFICATION Marking
    Text: Transistor 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.2+0.1 –0.05 • Features 1˚ 2 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		PDF 2SC4809 2SC4809 matsushita Transistor hFE CLASSIFICATION Marking

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC5378 Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 M Di ain sc te on na tin nc ue e/ d 0.65 1.3±0.1 1 +0.1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


    Original     		PDF 2SC5378

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 0.95 3 +0.1 1.9±0.2 0.65±0.15 +0.1 0.16 –0.06 2 Ta=25˚C 0.8 0.1 to 0.3 0.4±0.2 Parameter


    Original     		PDF 2SD1679

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1512 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage


    Original     		PDF 2SD1512

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d 0.4±0.2 5° 2


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) 2SD0814 2SD0814A

    2SD1679

    Abstract: No abstract text available
    Text: Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification M Di ain sc te on na tin nc ue e/ d Unit: mm Ratings Unit 18±5 V 18±5 V 5 V 1 A Collector to base voltage VCBO VCEO Emitter to base voltage VEBO Peak collector current


    Original     		PDF 2SD1679 2SD1679

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1511 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency output amplification 4.5±0.1 ● • * 1.5±0.1 Parameter Symbol Ratings Unit VCBO 100 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current


    Original     		PDF 2SD1511

    2SC4755

    Abstract: No abstract text available
    Text: Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 2.1±0.1 Unit 25 V 20 V VCES Emitter to base voltage VEBO Peak collector current ICP Collector current IC Collector power dissipation


    Original     		PDF 2SC4755 2SC4755

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SC4782

    matsushita Transistor hFE CLASSIFICATION Marking

    Abstract: IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 0.4±0.2 5° 2 1 (0.95) (0.95) 1.9±0.1 ■ Absolute Maximum Ratings


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A) matsushita Transistor hFE CLASSIFICATION Marking IC NE 556 2SD0814 2SD0814A 2SD814 2SD814A

    2SC4782

    Abstract: No abstract text available
    Text: Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm 1.45 0.95 3 +0.1 0.4 –0.05 1.9±0.2 0.65±0.15 1 0.95 +0.2 ● +0.25 1.5 –0.05 0.65±0.15 High-speed switching. Low collector to emitter saturation voltage VCE sat .


    Original     		PDF 2SC4782 2SC4782

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB1073 Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 4.5±0.1 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 3° ● Low collector to emitter saturation voltage VCE sat . Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment


    Original     		PDF 2SB1073

    SS TRANSISTOR

    Abstract: ic shelf life Frequency Control Products transistor 2SC5295 SC-75
    Text: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Collector current Collector power dissipation Junction temperature Storage temperature Unit 15 V VCEO 10 V VEBO 2 V 0.75±0.15


    Original     		PDF 2SC5295 SS TRANSISTOR ic shelf life Frequency Control Products transistor 2SC5295 SC-75

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD0814, 2SD0814A 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 0.40+0.10 ñ0.05 5° 0.4±0.2 2.8+0.2 -0.3 2 1 (0.95) (0.95)


    Original     		PDF 2SD0814, 2SD0814A 2SD814, 2SD814A)

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD1304 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d 1.45 0.95 1 3 +0.1 +0.2 0.65±0.15 0.95 2.9 –0.05 ● 0.65±0.15 Zener diode built in. Mini type package, allowing downsizing of the equipment and


    Original     		PDF 2SD1304

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SB1599 Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2457 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 * 0.4±0.04 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage


    Original     		PDF 2SB1599 2SD2457 55nteed

    2SC5295

    Abstract: SC-75
    Text: Transistor 2SC5295 Silicon NPN epitaxial planar type Unit: mm For 2 GHz band low-noise amplification 0.2+0.1 –0.05 0.15+0.1 –0.05 0.8±0.1 1.6±0.15 0.4 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage


    Original     		PDF 2SC5295 2SC5295 SC-75

    VA MARKING

    Abstract: No abstract text available
    Text: Transistor 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 * Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SD2210 VA MARKING

    2sd0968

    Abstract: No abstract text available
    Text: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Collector to base voltage 2SD0968A Collector to


    Original     		PDF 2SD0968, 2SD0968A 2SD968, 2SD968A) 2SB0789 2SB789) 2SB0789A 2SB789A) 2sd0968

    2SB0789

    Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
    Text: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage


    Original     		PDF 2SD0968, 2SD0968A 2SD968, 2SD968A) 2SB0789 2SB789) 2SB0789A 2SB789A) 2SD0968 2SB0789 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A

    2SD602

    Abstract: No abstract text available
    Text: Transistor 2SD0602, 2SD0602A 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0710 (2SB710) and 2SB0710A (2SB710A) Unit: mm • Features 0.40+0.10 ñ0.05 0.16+0.10 -0.06 M Di ain sc te on na tin nc ue e/ d Symbol


    Original     		PDF 2SD0602, 2SD0602A 2SD602, 2SD602A) 2SB0710 2SB710) 2SB0710A 2SB710A) 2SD0602 2SD0602A 2SD602