2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C

Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A IC 2003
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 1.6±0.2 1 3 2 0.5±0.08 0.4±0.08

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency driver amplification Complementary to 2SB0789G • Package • High collector-emitter voltage (Base open) VCEO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SB0789G • Features ■ Package • High collector-emitter voltage (Base open) VCEO

2SD0968G

Abstract: 2SB0789G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency driver amplification Complementary to 2SB0789G ue pl d in an c se ed lud pl vi an m m es

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 3 2 0.5±0.08 0.4±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te on na tin nc

2SB0789G

Abstract: 2SD0968G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968G Silicon NPN epitaxial planar type For low-frequency driver amplification Complementary to 2SB0789G • Package • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC

2SB789A

Abstract: 2SB0789A 2SD0968A 2SD968A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 3˚ 1 0.4±0.08 0.4±0.04 4.0+0.25 –0.20 • Absolute Maximum Ratings Ta = 25°C

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO

2sd0968

Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Collector to base voltage 2SD0968A Collector to

Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm Parameter Collector to base voltage 2SD0968A Collector to 2SD0968 100

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.5±0.1 4.0+0.25 –0.20 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

hw101

Abstract: HW101A 2SD0968A NJM2640 NJM2640E motor dc fan 48v motor dc 48v ZD 103 ma
Contextual Info: NJM2640 48V ２相半波モータプリドライバ • 概要 ■ 外形 NJM2640 は48V ファンモータ向けに開発した 2 相半 波 DC ブラシレスモータプリドライバ IC です。 ロック保護／自動復帰回路を内蔵し、モータロック時

Contextual Info: NJM2640 PRELIMINARY Two-phase Unipolar DC Brushless Motor Pre-Driver IC ♦ PACKAGE OUTLINE ♦ GENERAL DESCRIPTION NJM2640 is a two phase unipolar DC brushes motor pre-driver IC. It features high voltage bipolar technology so that the driver works up to 48V. High voltage operation