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    MATCHING TRANSISTORS Search Results

    MATCHING TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MATCHING TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRF7003

    Abstract: TRF8010
    Text: Amplifier FAQ’s QUESTION: Why do the amplifiers require external matching? ANSWER: External matching optimizes the overall device performance. Support components capacitors and inductors Q-values are much higher in off-chip form and thereby provide low loss, highly tuned matching circuits. External matching also provides


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    C2766G

    Abstract: UPC2766GR UPC2766GR-E1
    Text: WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS UPC2766GR FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical Phase Matching: ±0.3° (driven in phase)


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    UPC2766GR UPC2766GR-E1 2500/Reel 24-Hour C2766G UPC2766GR UPC2766GR-E1 PDF

    C2766G

    Abstract: UPC2766GR UPC2766GR-E1
    Text: WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS UPC2766GR FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical Phase Matching: ±0.3° (driven in phase)


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    UPC2766GR UPC2766GR-E1 2500/Reel 24-Hour C2766G UPC2766GR UPC2766GR-E1 PDF

    Untitled

    Abstract: No abstract text available
    Text: WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS FEATURES FUNCTIONAL BLOCK DIAGRAM • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: +0.3 dB Typical Phase Matching: ±0.3° (driven in phase)


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    UPC2766GR UPC2766GR UPC2766GR-E1 2500/Reel PDF

    BLS2731-10

    Abstract: AN98029 broadband impedance transformation
    Text: APPLICATION NOTE Broadband impedance matching for S-Band Transistors AN98029 Philips Semiconductors Broadband impedance matching for S-Band Transistors CONTENTS 1 INTRODUCTION 2 DESIGN METHOD 3 IMPEDANCE MEASUREMENT 4 FITTING DATA TO MODEL 5 LUMPED ELEMENT INPUT AND OUTPUT


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    AN98029 SCA57 BLS2731-10 AN98029 broadband impedance transformation PDF

    4120PL

    Abstract: TEKELEC 302 BLV958FL sot391 BLV958 A11Z SQL5 Tekelec BLV95 68479 wire
    Text: Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching, high gain and efficiency NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors


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    BLV958; BLV958FL OT391A OT391B -SOT391A -SOT391 4120PL TEKELEC 302 BLV958FL sot391 BLV958 A11Z SQL5 Tekelec BLV95 68479 wire PDF

    smd transistor l32

    Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
    Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter


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    BLV945B OT324 OT324 7110fl2fc. OT324. ocn23ia smd transistor l32 SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27 PDF

    BLV958

    Abstract: BLV958FL 101 Ceramic Disc Capacitors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1997 Oct 15 2000 Jan 12 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    BLV958; BLV958FL OT391A OT391B 125002/04/pp12 BLV958 BLV958FL 101 Ceramic Disc Capacitors PDF

    BLV958

    Abstract: BLV958FL
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 2000 Jan 12 2000 Nov 02 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    BLV958; BLV958FL OT391A OT391B 613524/05/pp16 BLV958 BLV958FL PDF

    iw16

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1996 Feb 12 1997 Oct 15 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    BLV958; BLV958FL OT391A OT391B BLV958FL SCA55 127067/00/03/pp16 iw16 PDF

    2N6083

    Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
    Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer


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    AN721/D AN721 2N6083 AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A PDF

    AN721

    Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
    Text: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer


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    AN721/D AN721 AN721 EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083 PDF

    ta8172

    Abstract: t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors
    Text: File No. 656. RF Power Tran sisto rs Solid State Division 4 .n a 7 fì 40971 30-W and 45-W, 12.5-V, UHF Mobile, Silicon N-P-N Overlay Transistors With Internally Mounted Input-Matching Networks Features: • Internally mounted input " T " matching networks


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    RCAHF-40 ta8172 t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors PDF

    Untitled

    Abstract: No abstract text available
    Text: _ Si-Cr THIN FILM RESISTORS VALUES OF 10Q to 100Kfi, LASER TRIMMABLE * FEATURES Wide Range of Resistor Values Negligible Voltage Dependence Very Low Temperature Coefficient Very High Breakdown Voltage Good Matching Characteristics Very Low Temperature Drift Matching


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    100Kfi, T-42-21 PDF

    c39 transistor

    Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,


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    BLV950 SC08b OT262A2 SCDS47 127061/1100/02/pp16 c39 transistor transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37 PDF

    4422 mosfet

    Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
    Text: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.


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    AN-30 TC4424 4422 mosfet MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501 PDF

    Untitled

    Abstract: No abstract text available
    Text: AN732 Si4438 TX M ATCHING 1. Introduction This application note provides a description of the matching of the TX Power Amplifier PA on the Si4438 RFIC working in the 470–510 MHz Chinese AMR band. Specifically, this document does not address the matching


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    AN732 Si4438 Si4460/4461 Si4463 PDF

    BLV947

    Abstract: uhf npn 200w cw transistor 200w
    Text: Philips Semiconductors bb53^31 OOEISbS TS5 APX Preliminary specification BLV947 UHF push-pull power transistor •N AMER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


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    BLV947 OT262A2 BLV947 uhf npn 200w cw transistor 200w PDF

    rf based helicopter

    Abstract: RF basics TV 2 way passive splitter circuit diagram 2 way antenna splitter, circuit diagram
    Text: Non-PLL RF Basics Presented by: Dean Banerjee, Wireless Applications Engineer Non-PLL RF Basics • Introduction – Wireless Applications – Basic RF Signal and Modulation • Basic RF Performance – Power and Matching Parameters • Power/Gain • Impedance Matching Issues


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    Philips 2222-581

    Abstract: BLV950 St 1702 TRANSISTOR ferroxcube 4322
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 • Internal input and output matching for easy matching,


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    BLV950 OT262A2 SCA55 127067/00/03/pp16 Philips 2222-581 BLV950 St 1702 TRANSISTOR ferroxcube 4322 PDF

    Untitled

    Abstract: No abstract text available
    Text: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting


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    BLV948 2x100 BLV948 PDF

    MRC106

    Abstract: BCM7 G37 IC 2222-581 Philips 2222-581 BLV945A C360 transistor c36 ferroxcube 4322 2322 151
    Text: Philips Semiconductors ^53^31 0 Q 2 CI 5 4 ,1 ?G2 MB A P X Product specification BLV945A UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain • Emitter-ballasting resistors for an optimum temperature profile


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    0QSCI54T BLV945A OT324 MRC106 MRC106 BCM7 G37 IC 2222-581 Philips 2222-581 BLV945A C360 transistor c36 ferroxcube 4322 2322 151 PDF

    2766G

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS U PC 2766G R FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical


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    2766G UPC2766GR UPC2766GR-E1 2500/Reel PDF

    c38 transistor

    Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
    Text: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.


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    D0b31t BLV948 OT262A2 MRC117 2x100 c38 transistor PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37 PDF