JMC5501
Abstract: SD1480 vk200 M111
Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING POUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480
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SD1480
SD1480
JMC5501
vk200
M111
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sd1480
Abstract: JMC5501 arco 402 datasheet vk200 M111 600lW
Text: SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P OUT = 125 W MIN. WITH 9.2 dB GAIN .500 6LFL M111 epoxy sealed ORDER CODE SD1480 BRANDING SD1480
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SD1480
SD1480
JMC5501
arco 402 datasheet
vk200
M111
600lW
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BLV33F
Abstract: matching code 6L tv transmitter amplifier circuit ASI10493
Text: BLV33F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: PACKAGE STYLE .500 6L FLG • Gold Metalization • Internal Input Matching • Omnigold Metalization System
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BLV33F
BLV33F
ASI10493
matching code 6L
tv transmitter amplifier circuit
ASI10493
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ASI10580
Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
Text: CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG = 10 dB at 6.0 W/960 MHz
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040x45°
ASI10580
ASI10580
35 W 960 MHz RF POWER TRANSISTOR NPN
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uml70 application circuit
Abstract: ASI10697 UML70
Text: UML70 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML70 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • • Omnigold Metalization System 2x ØN FULL R D B E .725/18,42 F G MAXIMUM RATINGS 8.0 A IC
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UML70
UML70
ASI10697
uml70 application circuit
ASI10697
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ASI10667
Abstract: UHBM45
Text: UHBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBM45 is Designed for FM Land Mobile Applications up to 836 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 5.0 dB at 45 W/836 MHz • Omnigold Metalization System
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UHBM45
UHBM45
040x45°
ASI10667
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ULBM35
Abstract: ASI10684
Text: ULBM35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM35 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • Internal Input matching Network • PG = 6.0 dB at 35 W/470 MHz
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ULBM35
ULBM35
ASI10684
ASI10684
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VHB80-12
Abstract: 865 RF transistor RF POWER TRANSISTOR NPN transistor D 982 ASI10718 k20a
Text: VHB80-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB80-12 is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.0 dB at 80 W/175 MHz • Omnigold Metalization System
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VHB80-12
VHB80-12
ASI10718
865 RF transistor
RF POWER TRANSISTOR NPN
transistor D 982
ASI10718
k20a
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Untitled
Abstract: No abstract text available
Text: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold Metalization System
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VHB100-12
VHB100-12
ASI10719
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ULBM15
Abstract: No abstract text available
Text: ULBM15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM15 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 7.5 dB at 15 W/470 MHz • Omnigold Metalization System
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ULBM15
ULBM15
ASI10905
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CBSL15
Abstract: ASI10581
Text: CBSL15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL15 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG =8.0 dB at 15 W/960 MHz
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CBSL15
CBSL15
040x45°
ASI10581
ASI10581
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UHBS30-2
Abstract: 1250H TRANSISTOR T 927 ASI10671
Text: UHBS30-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.0 dB at 30 W/960 MHz • Omnigold Metalization System
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UHBS30-2
UHBS30-2
040x45°
ASI10671
1250H
TRANSISTOR T 927
ASI10671
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UML70
Abstract: uml70 application circuit ASI10697
Text: UML70 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML70 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 8.5 dB at 70 W/400 MHz
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UML70
UML70
ASI10697
uml70 application circuit
ASI10697
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UHBS30-1
Abstract: ASI10670
Text: UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for Class C, FM Base Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG A FEATURES: .040x45° B C 2XØ.130 4X .025 R • Internal Input Matching Network • PG = 7.5 dB at 30 W/900 MHz
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UHBS30-1
UHBS30-1
040x45°
ASI10670
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UHBS60-1
Abstract: ASI10672 IC K 902
Text: UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 7.5 dB at 60 W/900 MHz • Omnigold Metalization System
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UHBS60-1
UHBS60-1
040x45°
ASI10672
ASI10672
IC K 902
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UML25F
Abstract: ASI10695
Text: UML25F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UML25F is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 9.0 dB at 25 W/400 MHz
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UML25F
UML25F
ASI10695
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UHBS15-2
Abstract: ASI10669
Text: UHBS15-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-2 is Designed for Class C, FM Base Station Applications up to 960 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 9.0 dB at 15 W/960 MHz • Omnigold Metalization System
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UHBS15-2
UHBS15-2
040x45°
ASI10669
ASI10669
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UML100
Abstract: ASI10698
Text: UML100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UML100 is Designed for High Power Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN FU LL R • PG = 7.5 dB Typical at 400 MHz • Internal Input Matching Network
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UML100
UML100
ASI10698
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UHBS15-1
Abstract: ASI10668
Text: UHBS15-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-1 is Designed for Class C, FM Base Station Applications up to 900 MHz. PACKAGE STYLE .230 6L FLG FEATURES: A • Internal Input Matching Network • PG = 9.5 dB at 15 W/ 900 MHz • Omnigold Metalization System
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UHBS15-1
UHBS15-1
040x45°
ASI10668
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ASI10683
Abstract: ULBM25 470 6L
Text: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 25 W/470 MHz • Omnigold Metalization System
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ULBM25
ULBM25
ASI10683
470 6L
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Untitled
Abstract: No abstract text available
Text: CC2538 www.ti.com SWRS096A – DECEMBER 2012 – REVISED APRIL 2013 A Powerful System-On-Chip for 2.4-GHz IEEE 802.15.4, 6LoWPAN and ZigBee Applications Check for Samples: CC2538 FEATURES 1 • 23 • • • Microcontroller – Powerful ARM Cortex M3 With Code
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CC2538
SWRS096A
512-kB,
256-kB
128-kB
32-kB
16-kB
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SOT323-3L
Abstract: No abstract text available
Text: STDD15 series LOW CAPACITANCE DETECTION DIODE MAIN PRODUCT CHARACTERISTICS IF AV 10 mA VRRM 15 V Tj (max) 150 °C VF (max) 0.51 V • ■ ■ ■ ■ SOT323-6L STDD15-xxS SOT323-3L STDD15-xxW FEATURES AND BENEFITS Low diode capacitance Device designed for RF application
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STDD15
OT323-3L
STDD15-xxW
OT323-6L
STDD15-xxS
STDD15-04W
OT323
STDD15-05WFILM
SOT323-3L
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ASI10685
Abstract: ULBM45 U 318 m
Text: ULBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM45 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MHz • Omnigold Metalization System
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ULBM45
ULBM45
ASI10685
ASI10685
U 318 m
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Untitled
Abstract: No abstract text available
Text: CC2538 www.ti.com SWRS096A – DECEMBER 2012 – REVISED APRIL 2013 A Powerful System-On-Chip for 2.4-GHz IEEE 802.15.4, 6LoWPAN and ZigBee Applications Check for Samples: CC2538 FEATURES 1 • 23 • • • Microcontroller – Powerful ARM Cortex M3 With Code
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CC2538
SWRS096A
512-kB,
256-kB
128-kB
32-kB
16-kB
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