MAS3781E
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30
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MAS3781E
MAS3781E
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. M Di ain sc te on na tin nc ue e/ d • High-density mounting is possible • Optimum for high frequency rectification because of its short
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MAS3781
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MAS3781
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 0.15 min. 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in
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MAS3781
MAS3781
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Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 5˚ • High-density mounting is possible • Optimum for high frequency rectification because of its short
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MAS3781
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MAS3781E
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.33+0.05 –0.02 0.10+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 Peak reverse voltage Forward current (DC) Single
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MAS3781E
MAS3781E
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MAS3781
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5° Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30
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MAS3781
MAS3781
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MAS3781E
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5° 1 0.23+0.05 –0.02 2 (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5° Rating Unit Reverse voltage (DC)
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MAS3781E
MAS3781E
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MAS3781
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MAS3781 Silicon epitaxial planar type Unit: mm For switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High-density mounting is possible • Optimum for high frequency rectification because of its short reverse recovery time trr
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MAS3781
MAS3781
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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transistor 2sc5609
Abstract: 2sc5609 MAS3781E 2sc5609 transistor 2SD2621
Text: New Subminiature Surface-Mount Package SSS Mini 3-Pin Package Series n Overview The Subminiature Surface-Mount Package Series with 1.2 mm x 0.8 mm x 0.52 mm in external size will contribute to the production of downsized, lightweight, and low-profile devices. In addition, the flat-lead structure of the
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MAS3132D
MAS3132E
MAS3781
MAS3795
MAS3781E
MAS3795E
MAS3784
transistor 2sc5609
2sc5609
2sc5609 transistor
2SD2621
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