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    MARKING WN SOT23 Search Results

    MARKING WN SOT23 Result Highlights (1)

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    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation

    MARKING WN SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking R1B

    Abstract: TRANSISTOR C 2026 transistor marking wn MMBT918
    Text: MMBT918 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN silicon • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.008 gram


    Original     		PDF MMBT918 2002/95/EC OT-23, MIL-STD-750, marking R1B TRANSISTOR C 2026 transistor marking wn MMBT918

    400V 100MA NPN SOT23

    Abstract: MMBTA44 eb6 sot23 A44 transistor MARKING A44
    Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic


    Original     		PDF MMBTA44 300mA 2002/95/EC OT-23, MIL-STD-750, 400V 100MA NPN SOT23 MMBTA44 eb6 sot23 A44 transistor MARKING A44

    Untitled

    Abstract: No abstract text available
    Text: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original     		PDF BC856 -100mA BC846/BC847/BC848/BC849 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750,

    MMBT2369A

    Abstract: Transistor General Purpose Transistor FE SOT
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 15V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF MMBT2369A 200mA 2002/95/EC OT-23, MIL-STD-750, MMBT2369A Transistor General Purpose Transistor FE SOT

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


    Original     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    MMBTA44

    Abstract: marking a44 transistor marking wn A44 transistor
    Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volts POWER SOT- 23 225 mWatts Unit: inch mm FEATURES .056(1.40) .103(2.60) • Collector current I C = 300mA • In compliance with EU RoHS 2002/95/EC directives .047(1.20) .119(3.00) .110(2.80) • Collector-emitter voltage VCE = 400V


    Original     		PDF MMBTA44 300mA 2002/95/EC OT-23, MIL-STD-750, MMBTA44 marking a44 transistor marking wn A44 transistor

    MMBTA42

    Abstract: No abstract text available
    Text: MMBTA42 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts FEATURES • NPN silicon, planar design • Collector-emitter voltage VCE = 300V • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-23, Plastic


    Original     		PDF MMBTA42 500mA 2002/95/EC OT-23, MIL-STD-750, MMBTA42

    code marking ssi sot-23

    Abstract: mmbt918 MMBT918R
    Text: MMBT918 VHF/UHF NPN SILICON TRANSISTOR VOLTAGE 15 Volts POWER 225 mWatts FEATURES • NPN silicon 0.120 3.04 • /  0.110(2.80) ‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH MECHANICAL DATA


    Original     		PDF MMBT918 OT-23, MIL-STD-750, code marking ssi sot-23 mmbt918 MMBT918R

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2011/65/EU directives.


    Original     		PDF MMBT2369A 200mA 2011/65/EU IEC61249 OT-23, MIL-STD-750,

    MMBT4401

    Abstract: transistor m4a
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design .103(2.60) .086(2.20) .056(1.40) .047(1.20) • Collector current I C = 600mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF MMBT4401 600mA 2002/95/EC OT-23, MIL-STD-750, MMBT4401 transistor m4a

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750,

    "marking s1a" sot-23

    Abstract: 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Transition frequency f T >300MHz @ I C =10mAdc,


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz 2002/95/EC OT-23, MIL-STD-750, "marking s1a" sot-23 1N916 MMBT3904 MMBT3904 40V SOT23 transistor marking s1a

    Untitled

    Abstract: No abstract text available
    Text: MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 15 Volts 225 mWatts FEATURES • NPN epitaxial silicon, planar design 0.120 3.04 • Collector-emitter voltage V CE = 15V 0.110(2.80) • Collector current I C = 200mA • Lead free in comply with EU RoHS 2002/95/EC directives.


    Original     		PDF MMBT2369A 200mA 2002/95/EC IEC61249 OT-23, MIL-STD-750,

    eb6 sot23

    Abstract: No abstract text available
    Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR POWER 400 Volts 225 mWatts SOT-23 Unit：inch mm • Silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA ‡*UHHQPROGLQJFRPSRXQGDVSHU,(&6WG +DORJHQ)UHH


    Original     		PDF MMBTA44 300mA OT-23 OT-23, MIL-STD-750, RB500V-40 MMBTA44 eb6 sot23

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF MMBT3906 -200mA 2002/95/EC OT-23, MIL-STD-750,

    1N916

    Abstract: MMBT3906
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 225 mWatts POWER 40 Volts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF MMBT3906 -200mA 2002/95/EC OT-23, MIL-STD-750, 1N916 MMBT3906

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


    Original     		PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 400 Volt POWER 225 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • Silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • Lead free in compliance with EU RoHS 2011/65/EU directive


    Original     		PDF MMBTA44 300mA 2011/65/EU IEC61249 OT-23, MIL-STD-750, 2014-REV

    Untitled

    Abstract: No abstract text available
    Text: MMBT3904 NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 40 Volts SOT-23 225 mWatts Unit：inch mm • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage VCE = 40V 0.110(2.80) 0.006(0.15)MIN. FEATURES • / 


    Original     		PDF MMBT3904 200mA 300MHz 10mAdc, 20Vdc 100MHz OT-23 OT-23, MIL-STD-750,

    s2A SOT23

    Abstract: SOT-23 marking S2A
    Text: MMBT3906 PNP GENERAL PURPOSE SWITCHING TRANSISTOR 225 mWatts POWER 40 Volts SOT-23 Unit：inch mm • PNP epitaxial silicon, planar design 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Collector-emitter voltage VCE = -40V 0.103(2.60) • Collector current IC = -200mA


    Original     		PDF MMBT3906 -200mA OT-23 OT-23, MIL-STD-750, RB500V-40 s2A SOT23 SOT-23 marking S2A

    Untitled

    Abstract: No abstract text available
    Text: MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts SOT- 23 Unit: inch mm FEATURES • NPN epitaxial silicon, planar design 0.120(3.04) • Collector-emitter voltage V CE = 40V 0.110(2.80) • Collector current I C = 600mA


    Original     		PDF MMBT4401 600mA 2002/95/EC IEC61249 OT-23, MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: MMBTA42-AU NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 300 Volts 225 mWatts 0.006 0.15 MIN. FEATURES 0.120(3.04) • NPN silicon, planar design 0.110(2.80) • Collector-emitter voltage VCE = 300V • • • • • Collector current IC = 500mA Acqire quality system certificate : TS16949


    Original     		PDF MMBTA42-AU 500mA TS16949 AEC-Q101 2011/65/EU IEC61249 OT-23, MIL-STD-750, 2013-REV

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


    OCR Scan     		PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN