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    MARKING W4 NPN Search Results

    MARKING W4 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM2212RZ Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212CPZ-R7 Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212RZ-R7 Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212RZ-RL Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy
    SSM2212CPZ-RL Analog Devices Low Noise,Matched Dual NPN Tra Visit Analog Devices Buy

    MARKING W4 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type General purpose Dual NPN Transistors FMW4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=50mA 1 FMW4 2 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating


    Original     		PDF 300mW 100MHz

    KTC812E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 D The follwing characteristics are common for Q1, Q2. P SYMBOL RATING UNIT


    Original     		PDF KTC812E KTC812E

    KTC812U

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.


    Original     		PDF KTC812U KTC812U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC812U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES A super-minimold package houses 2 transistor. 1 6 2 5 3 4 DIM A A1 B A C High pairing property in hFE. A1 C Excellent temperature response between these 2 transistor.


    Original     		PDF KTC812U

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC812E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A High pairing property in hFE. 1 6 2 5 3 4 D The follwing characteristics are common for Q1, Q2. P SYMBOL RATING UNIT


    Original     		PDF KTC812E

    SC74A

    Abstract: transistor w10 SC-74A npn transistor w6 SC-88A marking W8 transistor transistor w10 18 FMG12 marking W10 DTC144EK
    Text: D I G I TA L T R A N S I S T O R A R R AY S DUAL COUPLED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,


    Original     		PDF UMW10N FMW10 FMG12 SC-74A SC-88A SC-74A SC-88A, SC74A transistor w10 npn transistor w6 marking W8 transistor transistor w10 18 marking W10 DTC144EK

    Untitled

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications 1.0±0.05 0.1±0.05 2 5 3 4 0.48 Equivalent Circuit and Bias Resistor Values


    Original     		PDF RN4985FS

    RN4985FS

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS RN4985FS

    Untitled

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS

    PBHV8540T

    Abstract: PBHV9040T IEC 62-50 code MARKING CODE SMD IC
    Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8540T O-236AB) PBHV9040T. AEC-Q101 PBHV8540T PBHV9040T IEC 62-50 code MARKING CODE SMD IC

    MARKING CODE SMD IC

    Abstract: PBHV8540T PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23
    Text: PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBHV8540T O-236AB) PBHV9040T. AEC-Q101 PBHV8540T MARKING CODE SMD IC PBHV9040T IEC 62-50 code SMD W4 Transistor SOT23 marking codes SOT23 NXP power dissipation TO-236AB NXP TRANSISTOR SMD MARKING CODE SOT23

    RN4985FS

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS RN4985FS

    Untitled

    Abstract: No abstract text available
    Text: RN4985FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor RN4985FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


    Original     		PDF RN4985FS

    KRC158F

    Abstract: parts equivalent KRC157F
    Text: SEMICONDUCTOR KRC157F-KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT APPLICATION. FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC157F-KRC159F KRC157F KRC158F KRC159F KRC157F KRC158F parts equivalent

    q1205

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)


    OCR Scan     		PDF C62702-C748 150iiin E35LD5 flE35bQ5 q1205

    BSS63

    Abstract: No abstract text available
    Text: BEE D • Ô23b320 G G lb704 4 ■ S IP PNP Silicon AF and Switching Transistors BCX 42 BSS 63 SIEMENS/ SPCL-, SEMICONDS T - X 1 '0 7 For general AF applications High breakdown voltage Low collector-emltter saturation voltage Complementary types: BCX 41, BSS 64 NPN


    OCR Scan     		PDF 23b320 lb704 Q62702-C945 Q62702-S401 Q62702-C1485 Q62702-S534 BSS63 BSS63

    2005A

    Abstract: 2SC3000 J160 transistor marking JB
    Text: Ordering number ; EN 86 6 C 2SC 3000 NPN Epitaxial P lanar Silicon Transistor HF Amp Applications Features . FBET series . High fT and small ere. Absolute H a x l m Ratings at Ta=2 5C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    OCR Scan     		PDF 2SC3000 2034/2034A SC-43 7tlt17D7b 2005A 2SC3000 J160 transistor marking JB

    2SA1210

    Abstract: 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor
    Text: SA N YO SEMICONDUCTOR CORP 12 E D I T 2SA1210 1 - 3 l \ PN P / npn Epitaxial P la n a r S ilic o n Transistors 2009A 2SC2912 - Q 7 * ^ 7 Q7b Q003775 0 High Voltage Switching, A F 150W Predriver Applications 780C Features • Adoption of F B E T process • High breakdown voltage


    OCR Scan     		PDF 2SA1210 0DGB752 2SA1210 2SC2912 FP 1018 JIS G3141 DDD3710 BC PNP Transistor

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMICONDUCTOR ÍS E CORP ^ BU508D r j 7m 07\n r ' 3 S NPN Triple Diffused Planar Silicon Transistor 2022 Horizontal Output Applications Absolute Maxlaua Batinga at Ta=25°C Collector to Base Voltage vCBO Collector to Emitter Voltage VCEO Emitter to Base Voltage


    OCR Scan     		PDF BU508D IS-20MA IS-313 IS-313A

    2SD1401

    Abstract: 2042A 5033K
    Text: SANYO SEMI CONDUCTOR CORP ÍSE D I 7 cH 7 a 7 b UDOSQflL, T' 33' 3 2SD1401 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1268B Features: • High breakdown voltage and high reliability • High switching speed


    OCR Scan     		PDF 2SD1401 1268B 1S-126A IS-20MA IS-313 IS-313A 2SD1401 2042A 5033K

    BFY52 equivalent

    Abstract: ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N929 2N2369 equivalent BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B.S. num ber* Page Type Device


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A BFY52 equivalent ic marking z7 marking C1s 2N2222 2N2475 2N2938 f025 2N2369 equivalent

    BFS36

    Abstract: BS9365 marking W4 NPN 2N2475 BFS37 f025 MARKING BS 2N929 2N930 BAW63
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A marking W4 NPN 2N2475 BFS37 f025 MARKING BS

    transistor w4

    Abstract: BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2
    Text: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A transistor w4 BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2

    bcy79 equivalent

    Abstract: 2N3053 equivalent 2N929 bcy78 equivalent 2N2905a equivalent f025 2N930 BAW63 BAW63A BFS36A
    Text: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A


    OCR Scan     		PDF BFS36 2N930 BS9365 BAW63 BS9302 BFS36A 2N929 BAW63A bcy79 equivalent 2N3053 equivalent bcy78 equivalent 2N2905a equivalent f025