mw w3
Abstract: No abstract text available
Text: MPH80E SILICON EPITAXIAL PLANAR DIODE PINNING PIN Features DESCRIPTION 1 Cathode 2 Anode 1 W3 • High speed • High reliability • SOD 323 package 2 Top view Marking Code: "W3" Simplified outline SOD-323 and symbol Applications ultra high speed switching
|
Original
|
PDF
|
MPH80E
OD-323
OD-323
mw w3
|
CODE W3
Abstract: mw w3 W3 Marking Code
Text: MPH80E SILICON EPITAXIAL PLANAR DIODE PINNING PIN Features DESCRIPTION 1 Cathode 2 Anode 1 W3 • High speed • High reliability • SOD 323 package 2 Top view Marking Code: "W3" Simplified outline SOD-323 and symbol Applications ultra high speed switching
|
Original
|
PDF
|
MPH80E
OD-323
OD-323
CODE W3
mw w3
W3 Marking Code
|
MPH80E
Abstract: oc 323
Text: MPH80E SILICON EPITAXIAL PLANAR DIODE PINNING PIN Features DESCRIPTION 1 Cathode 2 Anode 1 W3 • High speed • High reliability • SOD 323 package 2 Top view Marking Code: "W3" Simplified outline SOD-323 and symbol Applications ultra high speed switching
|
Original
|
PDF
|
MPH80E
OD-323
OD-323
MPH80E
oc 323
|
Untitled
Abstract: No abstract text available
Text: MPH80E SILICON EPITAXIAL PLANAR DIODE PINNING Features • High speed • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W3 Applications • Ultra high speed switching Absolute Maximum Ratings Ta = 25 OC Parameter Top View Marking Code: "W3" Simplified outline SOD-323 and symbol
|
Original
|
PDF
|
MPH80E
OD-323
OD-323
|
Marking W3
Abstract: No abstract text available
Text: MPH80E SILICON EPITAXIAL PLANAR DIODE PINNING Features • High speed • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 W3 Applications • Ultra high speed switching Absolute Maximum Ratings Ta = 25 OC Parameter Top View Marking Code: "W3" Simplified outline SOD-323 and symbol
|
Original
|
PDF
|
MPH80E
OD-323
OD-323
Marking W3
|
SDP530Q
Abstract: No abstract text available
Text: SDP530Q Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530Q W3 SOD-523 Outline Dimensions
|
Original
|
PDF
|
SDP530Q
OD-523
KSD-E010-001
SDP530Q
|
SDP530Q
Abstract: No abstract text available
Text: SDP530Q Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530Q W3 SOD-523 unit : mm
|
Original
|
PDF
|
SDP530Q
OD-523
KSD-E010-001
100MHz
SDP530Q
|
c014 DATASHEET
Abstract: transistor c014 c014 SDP530D KSD-C014-000 marking w3 diode pin diode attenuator uhf Marking W3
Text: SDP530D Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530D W3 SOD-323 unit : mm
|
Original
|
PDF
|
SDP530D
OD-323
KSD-C014-000
100MHz
c014 DATASHEET
transistor c014
c014
SDP530D
KSD-C014-000
marking w3 diode
pin diode attenuator uhf
Marking W3
|
Untitled
Abstract: No abstract text available
Text: SDP530Q Semiconductor Attenuator Diode Features • Low capacitance : Max 0.5pF • Low series resistance : rs=3Ω Typ. @IF=10mA • AGC and attenuator diode for VHF/UHF band tuner Ordering Information Type No. Marking Package Code SDP530Q W3 SOD-523 Outline Dimensions
|
Original
|
PDF
|
SDP530Q
OD-523
KSD-E010-001
|
Untitled
Abstract: No abstract text available
Text: MC74VHC1GT126 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load 1 5 W3 M G G 1 TSOP−5 / SOT−23 / SC−59
|
Original
|
PDF
|
MC74VHC1GT126
MC74VHC1GT126/D
|
mr2835s
Abstract: MR2835SK
Text: MR2835S, MR2835SK Overvoltage Transient Suppressor .designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect
|
Original
|
PDF
|
MR2835S,
MR2835SK
MR2835S
MR2835S
|
zener diode 562
Abstract: MR2835SK
Text: MR2835S, MR2835SK Overvoltage Transient Suppressor .designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect
|
Original
|
PDF
|
MR2835S,
MR2835SK
MR2835S
MR2835S
zener diode 562
|
marking WM
Abstract: BZT52C7v5 spice transistor marking WY BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C39 BZT52C3V0 BZT52C3V3 BZT52C3V6
Text: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16
|
Original
|
PDF
|
BZT52C2V0
BZT52C39
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
marking WM
BZT52C7v5 spice
transistor marking WY
BZT52C39
|
diode marking w8
Abstract: marking code zener diode wl diode marking w9 WM Marking code diode marking wm DIODE marking W4 38 marking code diode wl 24 256 W6 marking WM marking code w6
Text: BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly
|
Original
|
PDF
|
BZT52C2V4
BZT52C39
BZT52C2V7
BZT52C3V0
BZT52C43
BZT52C47
BZT52C51
BZT52C8V2
BZT52C9V1
diode marking w8
marking code zener diode wl
diode marking w9
WM Marking code
diode marking wm
DIODE marking W4 38
marking code diode wl
24 256 W6
marking WM
marking code w6
|
|
|
Untitled
Abstract: No abstract text available
Text: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C10 BZT52C13 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C36 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
Original
|
PDF
|
BZT52C2V0
BZT52C39
BZT52C10
BZT52C13
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C36
BZT52C43
BZT52C47
|
Untitled
Abstract: No abstract text available
Text: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C10 BZT52C13 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C36 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
Original
|
PDF
|
BZT52C2V0
BZT52C39
BZT52C10
BZT52C13
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C36
BZT52C43
BZT52C47
|
marking W6 diode
Abstract: marking code w6
Text: BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE Features • · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current Ideally Suited for Automated Assembly Processes SOD-123 · · · · · · · · Maximum Ratings
|
Original
|
PDF
|
BZT52C2V4
BZT52C39
500mW
OD-123
OD-123,
J-STD-020A
MIL-STD-202,
DS18004
marking W6 diode
marking code w6
|
marking code zener diode wl
Abstract: diode marking code W4
Text: BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C10 BZT52C13 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C36 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
Original
|
PDF
|
BZT52C2V4
BZT52C39
BZT52C10
BZT52C13
BZT52C2V7
BZT52C3V0
BZT52C36
BZT52C43
BZT52C47
marking code zener diode wl
diode marking code W4
|
DIODE marking W4 38
Abstract: marking W4 DS18004 diode marking code W4
Text: BZT52C2V4 - BZT52C39 SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C10 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C36 BZT52C43 BZT52C47 BZT52C51 BZT52C8V2 BZT52C9V1 Features • · · · Planar Die Construction 500mW Power Dissipation on Ceramic PCB General Purpose, Medium Current
|
Original
|
PDF
|
BZT52C2V4
BZT52C39
BZT52C10
BZT52C2V7
BZT52C3V0
BZT52C36
BZT52C43
BZT52C47
BZT52C51
DIODE marking W4 38
marking W4
DS18004
diode marking code W4
|
DIODE marking W4 38
Abstract: BZT52C2V0S
Text: BZT52C2V0S - BZT52C39S Lead-free SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S
|
Original
|
PDF
|
BZT52C2V0S
BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
DIODE marking W4 38
|
Untitled
Abstract: No abstract text available
Text: BZT52C2V0S - BZT52C39S Lead-free SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S
|
Original
|
PDF
|
BZT52C2V0S
BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
|
wm 294
Abstract: No abstract text available
Text: BZT52C2V0S - BZT52C39S Lead-free SURFACE MOUNT ZENER DIODE SPICE MODELS: BZT52C2V0S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C5V1S BZT52C5V6S BZT52C6V2S BZT52C6V8S BZT52C7V5S BZT52C8V2S BZT52C9V1S BZT52C10S BZT52C11S BZT52C12S BZT52C13S BZT52C15S BZT52C16S
|
Original
|
PDF
|
BZT52C2V0S
BZT52C39S
BZT52C2V4S
BZT52C2V7S
BZT52C3V0S
BZT52C3V3S
BZT52C3V6S
BZT52C3V9S
BZT52C4V3S
wm 294
|
BZT52C6V8
Abstract: No abstract text available
Text: BZT52C2V0 - BZT52C39 SURFACE MOUNT ZENER DIODE Lead-free SPICE MODELS: BZT52C2V0 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16
|
Original
|
PDF
|
BZT52C2V0
BZT52C39
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C6V8
|
Zener diode wz 130
Abstract: No abstract text available
Text: WTE POWER SEMICONDUCTORS BZT52C2V4S – BZT52C51S Pb 200mW SURFACE MOUNT ZENER DIODE Features Planar Die Construction 200mW Power Dissipation 2.4 – 51V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability
|
Original
|
PDF
|
BZT52C2V4S
BZT52C51S
200mW
OD-323
OD-323,
MIL-STD-202,
Zener diode wz 130
|
