V1J diode
Abstract: DIODE V1J marking code Diodes v1j MARKING CODE V1J V1j marking code V1J SMA DIODE V1J 95029 MARKING SMA V1J diode Diode marking code v1j
Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Lead Pb -free (“PbF” suffix)
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Original
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10MQ100NPbF
10MQ100NPbF
18-Jul-08
V1J diode
DIODE V1J marking code
Diodes v1j
MARKING CODE V1J
V1j marking code
V1J SMA
DIODE V1J
95029 MARKING
SMA V1J diode
Diode marking code v1j
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PDF
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V1J diode
Abstract: DIODE V1J marking code DIODE V1J V1j marking code MARKING CODE V1J Diodes v1j Diode marking code v1j SMA V1J 94119
Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA • Compliant to RoHS directive 2002/95/EC
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Original
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10MQ100NPbF
2002/95/EC
10MQ100NPbF
18-Jul-08
V1J diode
DIODE V1J marking code
DIODE V1J
V1j marking code
MARKING CODE V1J
Diodes v1j
Diode marking code v1j
SMA V1J
94119
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PDF
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V1J diode
Abstract: DIODE V1J MARKING V1J V1j marking code DIODE V1J marking code 10MQ100NPBF v1J Datasheet 95029 10MQ100 95029 MARKING
Text: 10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term
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Original
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10MQ100NPbF
10MQ100NPbF
18-Jul-08
V1J diode
DIODE V1J
MARKING V1J
V1j marking code
DIODE V1J marking code
v1J Datasheet
95029
10MQ100
95029 MARKING
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PDF
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V1J diode
Abstract: V1j marking code DIODE V1J marking code VS-10MQ100NPBF Diodes v1j vs10mq100npbf DIODE V1J Diode marking code v1j V1J SMA VS-10MQ100N
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
18-Jul-08
V1J diode
V1j marking code
DIODE V1J marking code
Diodes v1j
vs10mq100npbf
DIODE V1J
Diode marking code v1j
V1J SMA
VS-10MQ100N
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PDF
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V1J diode
Abstract: DIODE V1J marking code DIODE V1J Diode marking code v1j V1J DO-214AA Diodes v1j 95029 MARKING V1j marking code MARKING CODE V1J v1j RECTIFIER
Text: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMB • Compliant to RoHS directive 2002/95/EC
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Original
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10BQ100PbF
2002/95/EC
10BQ100PbF
18-Jul-08
V1J diode
DIODE V1J marking code
DIODE V1J
Diode marking code v1j
V1J DO-214AA
Diodes v1j
95029 MARKING
V1j marking code
MARKING CODE V1J
v1j RECTIFIER
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PDF
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V1J diode
Abstract: DIODE V1J 10bq100pbf DO-214AA, SMB v1J Datasheet V1j marking code DIODE V1J marking code
Text: 10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable Available • Low forward voltage drop RoHS* • High frequency operation Cathode Anode COMPLIANT • Guard ring for enhanced ruggedness and long term
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Original
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10BQ100PbF
10BQ100PbF
18-Jul-08
V1J diode
DIODE V1J
DO-214AA, SMB
v1J Datasheet
V1j marking code
DIODE V1J marking code
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PDF
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DIODE V1J marking code
Abstract: V1J diode 10bq100pbf V1j marking code Diode marking code v1j VS-10BQ100
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
18-Jul-08
DIODE V1J marking code
V1J diode
10bq100pbf
V1j marking code
Diode marking code v1j
VS-10BQ100
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PDF
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diode SMA marking code PB
Abstract: V1J diode 94119
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
11-Mar-11
diode SMA marking code PB
V1J diode
94119
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PDF
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V1J diode
Abstract: DIODE V1J marking code V1J DO-214AA
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
11-Mar-11
V1J diode
DIODE V1J marking code
V1J DO-214AA
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PDF
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V1j marking code
Abstract: V1J diode
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
11-Mar-11
V1j marking code
V1J diode
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PDF
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DIODE V1J marking code
Abstract: Diodes v1j DIODE V1J V1J diode V1J DO-214AA
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
11-Mar-11
DIODE V1J marking code
Diodes v1j
DIODE V1J
V1J diode
V1J DO-214AA
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PDF
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vs-10bq100
Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vs-10bq100
DIODE V1J marking code
V1j marking code
V1J diode
95034
vs10bq100
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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DIODE V1J marking code
Abstract: VS-10MQ100N VS-10MQ100 vs-10mq V1j marking code Diodes v1j SMA V1J diode VS10m VS-10MQ100NPbF
Text: VS-10MQ100NPbF Vishay High Power Products Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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Original
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VS-10MQ100NPbF
J-STD-020,
2002/95/EC
VS-10MQ100NPbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
DIODE V1J marking code
VS-10MQ100N
VS-10MQ100
vs-10mq
V1j marking code
Diodes v1j
SMA V1J diode
VS10m
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Untitled
Abstract: No abstract text available
Text: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode • High frequency operation Anode • Guard ring for enhanced ruggedness and long term
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Original
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VS-10MQ100NPbF
J-STD-020,
VS-10MQ100NPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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94119
Abstract: No abstract text available
Text: VS-10MQ100NPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2.1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability SMA
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Original
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VS-10MQ100NPbF
J-STD-020,
VS-10MQ100NPbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
94119
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PDF
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10BQ100PbF
Abstract: No abstract text available
Text: VS-10BQ100PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term
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Original
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VS-10BQ100PbF
J-STD-020,
VS-10BQ100PbF
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
10BQ100PbF
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2824 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2SK2824 Unit in mm HIGH SPEED SWITCH APPLICATIONS am ai n r ; < ;w iT rH appi irA T in w « ; E- High Input Impedance 1,5V Gate Drive Low Gate Threshold Voltage : Vth = 0.5~1.0V
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OCR Scan
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2SK2824
SC-70
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2823 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2SK2823 Unit in mm + 0.5 2.5-0.3 + 0.25 HIGH SPEED SWITCH APPLICATIONS a m a i n r ; < ;w iT rH a p p i irA T in w « ; i .b—0.1 & T • • • • High Input Impedance
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OCR Scan
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2SK2823
O-236MOD
SC-59
--258C
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PDF
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cti dro
Abstract: No abstract text available
Text: TOSHIBA 2SK2825 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 5 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • • • • High Input Impedance 1,5V Gate Drive Low Gate Threshold Voltage Small Package
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OCR Scan
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2SK2825
cti dro
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2823 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 3 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • High Input Impedance • 1,5V Gate Drive • Low Gate Threshold Voltage • Small Package
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OCR Scan
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2SK2823
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2824 TOSHIBA FIELD EFFECT TRANSISTOR FOR PORTABLE EQUIPMENT SILICON N CHANNEL MOS TYPE 2 S K2 8 2 4 HIGH SPEED SWITCH APPLICATIONS ANALOG SWITCH APPLICATIONS • High Input Impedance • 1,5V Gate Drive • Low Gate Threshold Voltage • Small Package
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OCR Scan
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2SK2824
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PDF
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ib7a
Abstract: No abstract text available
Text: This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1 1 Scope This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD:8837 "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
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OCR Scan
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5962-E266
MIL-BUL-103.
MIL-BUL-103
ib7a
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PDF
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VI-B63-05
Abstract: VI-J6Z-01 VI-B01-03
Text: File E135493 March 20, 1991 REPORT on COMPONENT - POWER SUPPLIES, INFORMATION TECHNOLOGY EQUIPMENT INCLUDING ELECTRICAL BUSINESS EQUIPMENT Vicor Corp. Andover, MA Copyright 1991 Underwriters Laboratories Inc. Underwriters Laboratories Inc. authorizes the above-named company to reproduce
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E135493
VI-J60-CX
VI-B63-05
VI-J6Z-01
VI-B01-03
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