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    MARKING U1D Search Results

    MARKING U1D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING U1D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: KTX111T
    Text: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name


    Original     		KTX111T 600mm Transistor hFE CLASSIFICATION Marking CE KTX111T PDF

    KDS2236M

    Abstract: KDS2236S 2236A
    Text: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)


    Original     		KDS2236M/S 50MHz) 100nA O-92M 50MHz KDS2236M KDS2236S 2236A PDF

    KDV287E

    Abstract: VARIABLE CAPACITANCE DIODE C25V
    Text: SEMICONDUCTOR TECHNICAL DATA KDV287E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE UHF SHF TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=1.9ή Typ.


    Original     		KDV287E C2V/C25V C2V/C25V 470MHz KDV287E VARIABLE CAPACITANCE DIODE C25V PDF

    KDR728

    Abstract: MARKING L USC diode
    Text: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL


    Original     		KDR728 KDR728 MARKING L USC diode PDF

    KDV257E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC A 1 2 SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150


    Original     		KDV257E 470MHz KDV257E PDF

    U 126

    Abstract: C25V KDV287
    Text: SEMICONDUCTOR TECHNICAL DATA KDV287 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE UHF SHF TUNING. L K H F ᴌExcellent C-V Characteristics, and Small Tracking Error. A ᴌLow Series Resistance : rS=1.9ή Typ. 1 E ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.)


    Original     		KDV287 C2V/C25V C2V/C25V 470MHz U 126 C25V KDV287 PDF

    kds12

    Abstract: KDS120V
    Text: SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ᴌVery Small Package : VSM. ᴌLow Forward Voltage : VF=0.92V Typ. . B ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.). G D 2 : CT=2.2pF (Typ.).


    Original     		KDS120V 100mA kds12 KDS120V PDF

    KDR729

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDR729 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A ᴌIO=200mA rectification possible. H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 4 =0.43(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ)


    Original     		KDR729 200mA 100mA 200mA KDR729 PDF

    KDR784

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDR784 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK L K A ᴌLow Forward Voltage : VF 3 =0.42(Typ.) 1 E FEATURES G B H F ᴌSmall Package : USC. 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC DIM


    Original     		KDR784 100mA KDR784 PDF

    VCO FOR UHF/VHF BAND

    Abstract: KDV273E
    Text: SEMICONDUCTOR TECHNICAL DATA KDV273E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES 1 A ᴌLow Series Resistance : rs=0.39ή Typ. E C B CATHODE MARK ᴌHigh Capacitance Ratio : C1V/C4V =2.0(Typ.) 2 MAXIMUM RATING (Ta=25ᴱ)


    Original     		KDV273E 470MHz VCO FOR UHF/VHF BAND KDV273E PDF

    KDS121V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : VSM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G D 2 : CT=0.9pF (Typ.). 1 3 K H A FEATURES ᴌVery Small Package ᴌLow Forward Voltage ᴌFast Reverse Recovery Time


    Original     		KDS121V 100mA KDS121V PDF

    KDV350E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL


    Original     		KDV350E 470MHz KDV350E PDF

    KTC3883

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC3883 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L ᴌHigh Current : IC MAX =200mA. ᴌLow Voltage Operating. H 1 P Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage


    Original     		KTC3883 200mA. OT-23 KTC3883 PDF

    marking f3 sot-23

    Abstract: Diode SOT-23 marking J KDS193
    Text: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌSmall Package : SOT-23. E B L L ᴌLow Forward Voltag : VF=0.9V Typ. . 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current


    Original     		KDS193 OT-23. OT-23 100mA marking f3 sot-23 Diode SOT-23 marking J KDS193 PDF

    KDV258

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. L K A H F ᴌLow Series Resistance : rs=0.45ή Max. 1 E ᴌHigh Capacitance Ratio : C1V/C4V =2.0(Min.) G B CATHODE MARK FEATURES 2 J D C I


    Original     		KDV258 470MHz KDV258 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL


    Original     		KDV350E 470MHz PDF

    marking e3 sot

    Abstract: Diode SOT-23 marking J KDS190
    Text: SEMICONDUCTOR KDS190 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌSmall Package : SOT-23. E B L L ᴌLow Forward Voltag : VF=0.92V Typ. . 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current


    Original     		KDS190 OT-23. OT-23 100mA marking e3 sot Diode SOT-23 marking J KDS190 PDF

    c8v sot

    Abstract: KDV152S
    Text: KDV152S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO for CB, C/P PLL APPLICATION. FEATURES E B L ᴌLow Series Resistance : rS=0.3 Typ. . L 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ) UNIT VR 15 V


    Original     		KDV152S 100MHz 50MHz c8v sot KDV152S PDF

    KDS114E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌLow Series Resistance : rS=0.5ή Typ. . E 1 A ᴌSmall Total Capacitance : CT=1.2pF(Max.). C B CATHODE MARK ᴌSmall Package. 2 D F MAXIMUM RATING (Ta=25ᴱ)


    Original     		KDS114E 100MHz KDS114E PDF

    transistor ESM 30

    Abstract: KDS112E
    Text: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G H A 2 C 3 1 DIM A B MILLIMETERS


    Original     		KDS112E 100MHz transistor ESM 30 KDS112E PDF

    C10V

    Abstract: KDV154
    Text: SEMICONDUCTOR TECHNICAL DATA KDV154 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. CATHODE MARK SYMBOL RATING UNIT Reverse Voltage VR 20 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range


    Original     		KDV154 CHARACTER13 C2V/20V 470MHz C10V KDV154 PDF

    KDS112E

    Abstract: transistor ESM 30
    Text: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G H A 2 C 3 1 DIM A B MILLIMETERS


    Original     		KDS112E 100MHz KDS112E transistor ESM 30 PDF

    VCO FOR UHF/VHF BAND

    Abstract: KDV273
    Text: SEMICONDUCTOR TECHNICAL DATA KDV273 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. L K A H F ᴌLow Series Resistance : rs=0.39ή Typ. 1 E ᴌHigh Capacitance Ratio : C1V/C4V =2.0(Typ.) G B CATHODE MARK FEATURES 2 J D C I


    Original     		KDV273 470MHz VCO FOR UHF/VHF BAND KDV273 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G C H A 2 DIM A B 3 1 MILLIMETERS


    Original     		KDS112E 100MHz PDF