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    MARKING TH SOT23-6 MOSFET Search Results

    MARKING TH SOT23-6 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING TH SOT23-6 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    LP0801

    Abstract: LP0801K1 MOSFET P-Channel sot-23 SOT 23 PD
    Text: LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-236AB* Die P8U❋ -16.5V 12Ω -200mA -1.0V LP0801K1 LP0801ND where ❋ = 2-week alpha date code


    Original     		PDF LP0801 O-236AB* -200mA LP0801K1 LP0801ND OT-23: OT-23. -50mA LP0801 LP0801K1 MOSFET P-Channel sot-23 SOT 23 PD

    LP0801

    Abstract: No abstract text available
    Text: LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* P8U❋ -16.5V 12Ω -200mA -1.0V LP0801K1 where ❋ = 2-week alpha date code


    Original     		PDF LP0801 -200mA O-236AB* LP0801K1 OT-23: OT-23. -50mA

    Untitled

    Abstract: No abstract text available
    Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary V BR DSS RDS(ON) max • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP2004K -430mA -150mA DS30933

    dmf sot23

    Abstract: DMP2160U DMP2160U-7 J-STD-020D
    Text: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS th ≤ 1V


    Original     		PDF DMP2160U OT-23 J-STD-020D DS31586 dmf sot23 DMP2160U DMP2160U-7 J-STD-020D

    SOT23 PAB

    Abstract: No abstract text available
    Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP2004K -150mA -430mA AEC-Q101 DS30933 SOT23 PAB

    Untitled

    Abstract: No abstract text available
    Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) max Package -20V 0.9Ω @ VGS = -4.5V 2.0Ω @ VGS = -1.8V SOT23 ID TA = +25°C -430mA -150mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


    Original     		PDF DMP2004K -430mA -150mA DS30933

    Untitled

    Abstract: No abstract text available
    Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP2004K -430mA -150mA AEC-Q101 DS30933

    DMP2004K-7

    Abstract: No abstract text available
    Text: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • • ID RDS(on) max TA = 25°C 0.9Ω @ VGS = -4.5V -430mA 2.0Ω @ VGS = -1.8V -150mA -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMP2004K -430mA -150mA AEC-Q101 DS30933 621-DMP2004K-7 DMP2004K-7 DMP2004K-7

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery


    Original     		PDF DMN3730U AEC-Q101

    JESD22-A108C

    Abstract: JESD22-A108-C JESD22A-101-B
    Text: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B JESD22-A108C JESD22-A108-C JESD22A-101-B

    DMP3120L

    Abstract: DMP3120L-7 J-STD-020D Marking p4s
    Text: DMP3120L P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 120mΩ @ VGS = -4.5V RDS(ON) < 240mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMP3120L AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31505 DMP3120L DMP3120L-7 J-STD-020D Marking p4s

    JESD22-A108C

    Abstract: 2N7002K
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min JESD22-A108C 2N7002K

    transistor MN1

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002A AEC-Q101 OT-23 OT-23 J-STD-020C MIL-STD-202, DS31360 transistor MN1

    Untitled

    Abstract: No abstract text available
    Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		PDF BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40

    ST2300

    Abstract: MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23
    Text: ST2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The ST2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices


    Original     		PDF ST2300 ST2300 OT-23 MOSFET N-Channel 1a vgs 0.9 sot-23 marking code 4A MOSFET N SOT-23 N mosfet sot-23 ST2300SRG n mosfet low vgs marking 4a sot23

    DIODES K29

    Abstract: No abstract text available
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF BSS127 AEC-Q101 DS35476 DIODES K29

    DMN2104L-7

    Abstract: J-STD-020D DMN2104L
    Text: DMN2104L N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance • 53mΩ @VGS = 4.5V • 104mΩ @VGS = 2.5V Low Gate Threshold Voltage


    Original     		PDF DMN2104L AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31560 DMN2104L-7 J-STD-020D DMN2104L

    SOT-23 MARKING mn1

    Abstract: transistor MN1 2N7002A-7 MARKING CODE 13 SOT23 2N7002A J-STD-020D
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage


    Original     		PDF 2N7002A AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31360 SOT-23 MARKING mn1 transistor MN1 2N7002A-7 MARKING CODE 13 SOT23 2N7002A J-STD-020D

    BSS127S

    Abstract: K29 mosfet BSS127 K28 SOT23
    Text: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage


    Original     		PDF BSS127 DS35476 BSS127S K29 mosfet BSS127 K28 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		PDF DMG3415U

    Untitled

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package


    Original     		PDF 2N7002A AEC-Q101 OT-23 OT-23 J-STD-020D MIL-STD-202, DS31360

    DMP2160U

    Abstract: DMP2160U-7 MOSFET P channel SOT-23
    Text: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V


    Original     		PDF DMP2160U OT-23 J-STD-020 DS31586 DMP2160U DMP2160U-7 MOSFET P channel SOT-23

    t6661

    Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
    Text: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel


    OCR Scan     		PDF O-236AB) OT-23 318E-04 O-261AA) OT-223 O-236AB OT-23) MMBF170LT1 BSS123LT1 2N7002LT1 t6661 ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot