Untitled
Abstract: No abstract text available
Text: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package -50V 10Ω VGS = -5V SOT323 ID TA = +25°C -130mA • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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BSS84W
OT323
-130mA
AEC-Q101
DS30205
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Untitled
Abstract: No abstract text available
Text: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package -50V 10Ω VGS = -5V SOT323 ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance,
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BSS84W
OT323
-130mA
DS30205
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Untitled
Abstract: No abstract text available
Text: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 10Ω VGS = -5V SOT323 -130mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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BSS84W
OT323
-130mA
DS30205
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Untitled
Abstract: No abstract text available
Text: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 10Ω VGS = -5V SOT323 -130mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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BSS84W
-130mA
OT323
OT323
DS30205
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PBSS4160U
Abstract: PBSS5160U
Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 August 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS5160U
OT323
SC-70)
PBSS4160U.
PBSS4160U
PBSS5160U
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TRANSISTOR SMD MARKING CODE 2x
Abstract: PBSS4160U PBSS5160U
Text: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS4160U
OT323
SC-70)
PBSS5160U.
PBSS4160U
TRANSISTOR SMD MARKING CODE 2x
PBSS5160U
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Untitled
Abstract: No abstract text available
Text: DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance • Low Gate Threshold Voltage
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DMN3065LW
OT323
AEC-Q101
DS36078
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n channel mosfet vds max 60v, id max 260ma
Abstract: No abstract text available
Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8LW
OT323
260mA
300mA
AEC-Q101
DS35639
n channel mosfet vds max 60v, id max 260ma
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Untitled
Abstract: No abstract text available
Text: DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance Low Gate Threshold Voltage
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DMN3065LW
OT323
AEC-Q101
OT-323
DS36078
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A1 SOT323 MOSFET P-CHANNEL
Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
Text: AF1333P P-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline SOT323 The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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AF1333P
OT323)
-550mA
1333P
OT323
A1 SOT323 MOSFET P-CHANNEL
marking G SOT323 Transistor
SOT323 MOSFET P
12V P-Channel Power MOSFET
AF1333P
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AF1332N
Abstract: No abstract text available
Text: AF1332N N-Channel Enhancement Mode Power MOSFET Features Description - Simple Gate Drive - 2KV ESD Rating Per MIL-STD-883D - Small Package Outline (SOT323) The advanced power MOSFET provides the designer with the best combination of fast switching, low
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AF1332N
MIL-STD-883D)
OT323)
600mA
1332N
OT323
AF1332N
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AO7400
Abstract: diode marking code 3l
Text: Sep 2002 AO7400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide
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AO7400
AO7400
OT323
SC-70
OT-323)
OT-323
SC-70
diode marking code 3l
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AO7401
Abstract: No abstract text available
Text: Nov 2002 AO7401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7401 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide
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AO7401
AO7401
OT323
SC-70
OT-323)
OT-323
SC-70
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PBSS4160U
Abstract: PBSS5160U
Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
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PBSS5160U
OT323
SC-70)
PBSS4160U.
PBSS5160U
PBSS4160U
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Untitled
Abstract: No abstract text available
Text: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS4160U
OT323
SC-70)
PBSS5160U.
PBSS4160U
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BSS138PW
Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
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BSS138PW
OT323
SC-70)
AEC-Q101
771-BSS138PW115
BSS138PW
TRANSISTOR SMD CODE PACKAGE SOT323
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2N7002BKW
Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
771-2N7002BKW115
2N7002BKW
2n7002bk
TRANSISTOR SMD MARKING CODE 50
006-AA
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NX3020NAK
Abstract: No abstract text available
Text: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKW
OT323
SC-70)
NX3020NAK
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2N7002PW
Abstract: No abstract text available
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
50itions
771-2N7002PW-115
2N7002PW
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Untitled
Abstract: No abstract text available
Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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2N7002BKW
OT323
SC-70)
AEC-Q101
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2N7002PW
Abstract: x8 sot323
Text: 2N7002PW 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
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2N7002PW
OT323
SC-70)
AEC-Q101
2N7002PW
x8 sot323
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2N7002PW
Abstract: smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
gate-s13
2N7002PW
smd code marking WV
transistor sc-70 marking codes
SOT323 MOSFET P
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Untitled
Abstract: No abstract text available
Text: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
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2N7002PW
OT323
SC-70)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: bbS3T31 Q025T4E ObS M A R X Philips Semiconductors N AUER PHILIPS/DISCRETE Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT323
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bbS3T31
Q025T4E
PMST4401
OT323
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