MARKING SY SOT23
Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23
2SA1162
2SC2712.
-100mA
-10mA
MARKING SY SOT23
MARKING sg SOT23
2SA1162
2SC2712
MARKING SO
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23
2SA1162
2SC2712.
-100mA
-10mA
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2SA1162
Abstract: 2SC2712
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG
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OT-23-3L
OT-23-3L
2SA1162
2SC2712.
-100mA
-10mA
2SA1162
2SC2712
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Untitled
Abstract: No abstract text available
Text: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package
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2SA1162
OT-23
2SC2712.
-100mA,
-10mA
22-Oct-2009
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pnp hfe 120-240
Abstract: smd marking SG MARKING SO smd marking sy 2SA1586
Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage
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2SA1586
-100mA,
-10mA
pnp hfe 120-240
smd marking SG
MARKING SO
smd marking sy
2SA1586
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Plastic-Encapsulate Transistors
Abstract: marking SG transistors 2SA1832
Text: SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR（PNP） 1. BASE 2. EMITTER FEATURES Power dissipation PCM : 0.1 W（Tamb=25℃） Collector current ICM : -0.15 A Collector-base voltage V BR CBO : -50 V Operating and storage junction temperature range
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OT-523
OT-523
2SA1832
-100A
-100mA
-10mA
OD-523
Plastic-Encapsulate Transistors
marking SG transistors
2SA1832
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2SA1832
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-523 Plastic-Encapsulated Transistors SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage V V(BR)CBO : -50
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OT-523
OT-523
2SA1832
-100mA,
-10mA
2SA1832
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2SA1832
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1832 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current : -0.15 A ICM Collector-base voltage
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OT-523
OT-523
2SA1832
-100mA,
-10mA
2SA1832
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type Product specification 2SA1586 Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage
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2SA1586
-100mA,
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2SA1832 Plastic-Encapsulate Transistors SOT-523 TRANSISTOR PNP FEATURES z High voltage and high current z Excellent hFE linearity z Complementary to 2SC4738 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-523
2SA1832
2SC4738
-100mA
-10mA
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification 2SA1832 SOT-523 Unit: mm +0.1 1.6-0.1 1.0 +0.05 0.2-0.05 +0.1 -0.1 2 +0.01 0.1-0.01 1 +0.15 1.6-0.15 Excellent hFE Linearity : +0.05 0.8-0.05 High Voltage and High Curren :VCEO=-50V,IC=-150mA Max. 0.55 Features
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2SA1832
OT-523
-150mA
-100mA
-10mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2014 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-323
OT-323
KTA2014
-100mA,
-10mA
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marking SG transistors
Abstract: A0 SOT 2SA1162
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150
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OT-23-3L
OT-23-3L
2SA1162
-100mA,
-10mA
marking SG transistors
A0 SOT
2SA1162
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2SA1162
Abstract: marking SG transistors MARKING SO
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150 mA ICM Collector-base voltage
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OT-23-3L
OT-23-3L
2SA1162
-100mA,
-10mA
2SA1162
marking SG transistors
MARKING SO
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1162 TRANSISTOR PNP FEATURES z Low noise: NF=1dB(Typ.)10dB(Max.) z Complementary to 2SC2712 z Small package 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
OT-23
2SA1162
2SC2712
-100mA
-10mA
2SA1162
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1586 TRANSISTOR PNP FEATURES SOT–323 High DC Current Gain High Voltage and High Current. Complementary to 2SC4116 Small Package APPLICATIONS General Purpose Amplification.
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OT-323
2SA1586
2SC4116
-100mA,
-10mA
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KTA2014
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2014 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES z Low frequency power amplifier application z Power switching application 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-323
OT-323
KTA2014
-100mA,
-10mA
KTA2014
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRM P024F048T12AL V•I Chip – PRM-AL Pre-Regulator Module TM • 24 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 18 – 36 Vdc • ZVS buck-boost regulator • High density – 414 • 1.33 MHz switching frequency W/in3
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P024F048T12AL
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Untitled
Abstract: No abstract text available
Text: PRM P048F048T24AL V•I Chip – PRM-AL Pre-Regulator Module TM • 48 V input V•I Chip PRM • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 830 • 1.45 MHz switching frequency W/in3 • Small footprint – 215 W/in2
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P048F048T24AL
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Designs PRM Regulator P048F048T12AL S C NRTL US Non-isolated Regulator Features • 48 V input VI Chip® PRM® • Adaptive Loop feedback • Vin range 36 – 75 Vdc • ZVS buck-boost regulator • High density – 407 W/in3 • 1.45 MHz switching frequency
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P048F048T12AL
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bsv52
Abstract: No abstract text available
Text: f Z T SG S-TH O M SO N ^ 7# lüülDSœiiiiSTrœiülOigl BSV52 S02369/S02369A SMALL SIGNAL NPN TRANSISTORS Type Marking BSV52 B2 S02369 N11 S02369A N81 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING
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BSV52
S02369/S02369A
S02369
S02369A
OT-23
S02369/A
007fl07b
BSV52/S02369/S02369A
bsv52
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SC06960
Abstract: 1Gt transistor SOA06 SOA56 748 transistor on marking RZ7 SOT23
Text: r Z 7 SG S-TH O M SO N ^ 7 # is LIOTIMMlig! SOAO6 SMALL SIGNAL NPN TRANSISTOR Type Marking SOAO6 1GT . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . MEDIUM CURRENT AF AMPLIFICATION . PNP COMPLEMENTS IS SOA56
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SOA56
OT-23
sc06960
007TblS
SOA06
OT-23
SC06960
1Gt transistor
SOA06
SOA56
748 transistor on
marking RZ7 SOT23
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Untitled
Abstract: No abstract text available
Text: r Z J SGS-THOMSON ^ 7 # . rao œ in itg w s* PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION ■ SWTCHING POWER TRANSISTORS DRIVER C IR C U IT S S E R IE S D IO D E S IN ANTISATURATION CLAMP SPEED UP DIODE
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification N-channel single gate MOS-FETs BF1107; BF1107W FEATURES • Currentless RF switch. APPLICATIONS • Various RF switching applications such as: - Passive loop through for VCR tuner T o p view - Transceiver switching.
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BF1107;
BF1107W
MSB003
BF1107)
BF1107
BF1107W
OT323
OT323
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