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    MARKING RY SOT223 Search Results

    MARKING RY SOT223 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING RY SOT223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR marking ar code

    Abstract: PNP Epitaxial Silicon Transistor sot223 pd 223 CZT7120 MARKING CODE 24 TRANSISTOR marking code RY SOT TRANSISTOR MARKING CODE RE marking RY SOT223 PNP TRANSISTOR marking pr IC MARKING CODE TA
    Text: Central LIM E PR RY A N CZT7120 I TM Semiconductor Corp. SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics


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    PDF CZT7120 CZT7120 OT-223 200mA 500mA 500mA, 14-November TRANSISTOR marking ar code PNP Epitaxial Silicon Transistor sot223 pd 223 MARKING CODE 24 TRANSISTOR marking code RY SOT TRANSISTOR MARKING CODE RE marking RY SOT223 PNP TRANSISTOR marking pr IC MARKING CODE TA

    C 38 marking code transistor

    Abstract: CZT853 417 TRANSISTOR
    Text: RY A IN IM EL PR Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


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    PDF CZT853 CZT853 OT-223 CZT953 100mA 500mA 500mA 14-September 100mA, C 38 marking code transistor 417 TRANSISTOR

    10 amp triac

    Abstract: CQ223M marking code TC TC-25 amp 600 volt triac CQ223N
    Text: RY A IN IM L RE Central CQ223M CQ223N P TM Semiconductor Corp. 1.0 AMP TRIAC 600 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ223M series types are epoxy molded silicon triacs designed for full wave AC control applications featuring gate triggering in all four 4 quadrants.


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    PDF CQ223M CQ223N OT-223 10-June 10 amp triac CQ223M marking code TC TC-25 amp 600 volt triac CQ223N

    MARKING 93 SOT-223

    Abstract: sot-223 93 marking code 17 surface mount diode marking codes transistors sot-223 pd 223 marking 009 CZT7120 MARKING CODE 24 TRANSISTOR
    Text: Central LIM E PR RY A N CZT7120 I TM Semiconductor Corp. SURFACE MOUNT PNP SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT7120 PNP Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics


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    PDF CZT7120 CZT7120 OT-223 17-June OT-223 MARKING 93 SOT-223 sot-223 93 marking code 17 surface mount diode marking codes transistors sot-223 pd 223 marking 009 MARKING CODE 24 TRANSISTOR

    relay 30A pin configuration

    Abstract: sot marking RY
    Text: RY A IN CZDM1003N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CZDM1003N is a 3A, 100V N-channel enhancement-mode silicon MOSFET, designed for motor control and relay driver


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    PDF CZDM1003N CZDM1003N OT-223 11-December INCZDM1003N relay 30A pin configuration sot marking RY

    CZT953

    Abstract: 417 TRANSISTOR
    Text: RY A IN IM EL PR Central CZT953 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT953 type is a high current PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,


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    PDF CZT953 CZT953 OT-223 CZT853 400mA 14-September 100mA, 50MHz 417 TRANSISTOR

    2SB772P

    Abstract: SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector to Emitter Marking Voltage VCEO V Collector Current DC Current Gain IC mA HFE @ VCE / IC Min-Max V / mA -500 -200 -150 -150 -150 -500 -200 -150 -150 -150 -500 -200 -600 -100 -100 -100 -600 -200 -600


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    PDF SC-62 2SB772P SOT-23 marking 717 cht9435zpt CH3906XPT 9435Z CHT2907XPT CH772PT CH3906 CH772P 2SB772PT-E

    T8901

    Abstract: SOT-39 9013 SOT-89 TS9013 sot39 sot-223 code marking
    Text: $ TAIW AN TS9013 SEMICONDUCTOR pb RoHS 500mA Low Quiescent Current CMOS LDO CO M PLIANCE SO T -89 o 1 2 3 S O T -2 2 3 Pin D e fin itio n : P in D e fin itio n : 2 1. Input 1. G round 2. Input 3. O utpu t 2. G round 3. O utpu t 1 2 3 General Description


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    PDF TS9013 500mA OT-89 OT-223 TS9Q13 TS9013 T8901 SOT-39 9013 SOT-89 sot39 sot-223 code marking

    Untitled

    Abstract: No abstract text available
    Text: SIEM EN S Verpackungshinweise Packing Information Jede Verpackungseinheit einer regulären Lieferung wird mit Informationen zu Her­ steller, Typ, Menge, Datum, Herstellungs­ ort, Charge, EGB-Empfindlichkeit usw. versehen. Diese Angaben zum Inhalt sind vorgeschrieben und beschreiben in unver­


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    PDF E6325 2000/Karton 2000/carton SIK00154 SIK00155

    AT120A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS 0ITÂ S y iI T BAT120 series Schottky barrier double diodes Product specification Supersedes data of 1998 Jan 21 Philips Sem iconductors 1998 Oct 30 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes


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    PDF BAT120 AT120A 135106/00/02/pp8

    1N6095

    Abstract: No abstract text available
    Text: MOTOROLA 1N6095 1N6096 SD41 SEMICONDUCTOR TECHNICAL DATA 1N6096 and SD41 are Motorola Preferred Devices Switchmode Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


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    PDF 1N6095 1N6096

    Untitled

    Abstract: No abstract text available
    Text: [M U M L H & E ^ S i Final Electrical S pecifications u i LT1118-2.5/LT1118-2.85/LT1118-5 m TECHNOLOGY i_Qw I , Low D ropout, 800m A Source a n d Sink Regulators Fixed 2.5V, 2.85V, 5V O u tp u t q F e b ru a ry 1995 F€ATUR€S DCSCRIPTIOfl • R egulates W hile Sourcing or Sinking Current


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    PDF LT1118-2 5/LT1118-2 85/LT1118-5 85Voutput 551fl4bfi DD117SS 5C168

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M MFT1N10E N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T


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    PDF MMFT1N10E/D MFT1N10E OT-223 318E-04 O-261AA OT-223

    25Q256

    Abstract: No abstract text available
    Text: PD-20478 rev. C 04/99 International Iö R Rectifier 20CJQ045 SCHOTTKY RECTIFIER 2 Amp SOT-223 M ajor Ratings and Characteristics Characteristics Description/Features 20CJQ045 Units 2.0 A l F Av Rectan9 ular 45 V RRM VF @ t p = 5^jssine V 390 @ 1 A p k ,T J = 1 25 °C


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    PDF PD-20478 20CJQ045 OT-223 25Q256

    DIODE SD51

    Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
    Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


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    PDF 150-C 1N6097 1N6098 DIODE SD51 5817 SOD-123 bly 83 Motorola Switchmode SD51

    P1F sot223

    Abstract: SOT-223 P1f PNP marking NY sot-223 on marking RV* P1f marking RV* P1f motorola p1f ON MARKING P1F marking NY sot-223 MARKING P1F
    Text: MOTOROLA Order this document by PZT2222AT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar E p itaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for


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    PDF PZT2222AT1/D OT-223 PZT2907AT1 PZT2222AT1 inch/1000 P1F sot223 SOT-223 P1f PNP marking NY sot-223 on marking RV* P1f marking RV* P1f motorola p1f ON MARKING P1F marking NY sot-223 MARKING P1F

    transistor CG sot-223

    Abstract: ah sot223
    Text: MOTOROLA Order this document by BCP53T1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor BCP53T1 M o to ro la P re ferre d D e vic e This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for


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    PDF BCP53T1/D OT-223 BCP56 BCP53T1 BCP53T1 inch/1000 BCP53T3 transistor CG sot-223 ah sot223

    NT 2955 ON transistor

    Abstract: Marking 2955 transistor k 4212 fet FT2955E
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t T ran sisto r P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount M M FT2955E M o to ro la P re fe rre d D e v ic e TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM


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    PDF OT-223 FT2955E NT 2955 ON transistor Marking 2955 transistor k 4212 fet FT2955E

    95ag

    Abstract: No abstract text available
    Text: LT1118/LT111825 g - ^W \ L lI lM F A H # LTl 118-2.85/LTl 118-5 TECHNOLOGY Low Low D ro p o u t, 800m A, Source a n d Sink R egulators A d ju s ta b le a n d Fixed 2.5V, 2.85V, 5V O u tp u t Iq , FEATURES DESCFHFTIOn • ■ ■ ■ ■ ■ ■ ■ The LT 1118 fam ily of low dropout regulators has the


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    PDF LT1118/LT111825 85/LTl vLT1005 LT1117 LT1120A LT1121 1118fa 95ag

    42t1

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by PZTA42T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS


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    PDF PZTA42T1/D PZTA42T1 OT-223 42t1

    LP3962

    Abstract: LP3965 lp3965-adj SOT223T T0263
    Text: Semiconductor LP3962/LP3965 1.5A Fast Ultra Low Dropout Linear Regulators General Description Features The LP 3962/LP3965 series o f fast ultra low -dropout linear regulators operate from a +2 .5 V to +7.0V input supply. W ide range o f preset output voltage options are available. These


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    PDF LP3962/LP3965 LP3962/LP3965 150ml LP3962 LP3965 lp3965-adj SOT223T T0263

    1mo 565

    Abstract: lazb LP3964-ADJ lbpb LP3961 LP3964 LP3964ET-ADJ SOT223-5 LAND PATTERN SOT223T
    Text: Semiconductor LP3961/LP3964 800mA Fast Ultra Low Dropout Linear Regulators General Description Features The LP 3961/LP3964 series o f fast ultra low -dropout linear regulators operate from a +2 .5 V to +7.0V input supply. W ide range o f preset output voltage options are available. These


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    PDF LP3961/LP3964 800mA LP3961/LP3964 1mo 565 lazb LP3964-ADJ lbpb LP3961 LP3964 LP3964ET-ADJ SOT223-5 LAND PATTERN SOT223T

    BF720T1

    Abstract: SMD310
    Text: MOTOROLA O rder this docum ent by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit Collector-Em itter Voltage


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    PDF BF720T1/D BF720T1 318E-04, O-261AA) SMD310

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by BF720T1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Transistor BF720T1 Motorola Preferred Device COLLECTOR 2,4 NPN SILICON TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Sym bol Value Unit Collector-Em itter Voltage


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    PDF BF720T1/D BF720T1