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    MARKING RJA ON SEMICONDUCTOR Search Results

    MARKING RJA ON SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING RJA ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N4728G-1N4758G Taiwan Semiconductor Small Signal Product 1W DO-41 Zener Volatge Regulators FEATURES - Zener voltage range 3.3 to 56Volts - DO-41 package JEDEC - Through-hole device type mounting - Hermetically sealed glass - Compression bonded construction


    Original     		PDF 1N4728G-1N4758G DO-41 56Volts DO-41 MIL-STD-202, 260oC/10 1N47XXG 1N47XXC 60-cycle

    Untitled

    Abstract: No abstract text available
    Text: 1N4728G ~ 1N4758G Taiwan Semiconductor Small Signal Product 1W DO-41 Zener Volatge Regulators FEATURES - Zener voltage range 3.3 to 56Volts - DO-41 package JEDEC - Through-hole device type mounting - Hermetically sealed glass - Compression bonded construction


    Original     		PDF 1N4728G 1N4758G DO-41 56Volts DO-41 MIL-STD-202, 260oC/10 1N47XXG S1406003

    369D

    Abstract: NTD3055 NTD3055-150 NTD3055-150-1 NTD3055-150T4
    Text: NTD3055−150 Power MOSFET 9.0 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 122 mW (Typ)


    Original     		PDF NTD3055-150 tpv10 NTD3055-150/D 369D NTD3055 NTD3055-150 NTD3055-150-1 NTD3055-150T4

    MBR20200CTG

    Abstract: No abstract text available
    Text: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg


    Original     		PDF MBR20200CT MBR20200CT/D MBR20200CTG

    MBRS2H100T3G

    Abstract: B210G 403A-03 Schottky b210
    Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRS2H100T3G MBRS2H100/D MBRS2H100T3G B210G 403A-03 Schottky b210

    test circuit MBR20200

    Abstract: MBR20200CTG MBR20200CT
    Text: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg


    Original     		PDF MBR20200CT MBR20200CT/D test circuit MBR20200 MBR20200CTG MBR20200CT

    ZENER SINGLE COLOR CODE

    Abstract: zener diodes color coded zener color codes colour code zener zener diode code color zener diode color code colour code diode zener 1W ZENER DIODE zener diode color code band 1w zener
    Text: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And


    Original     		PDF 1N4728G-1N4758G DO-41 DO-41 56Volts. MIL-STD-202, ZENER SINGLE COLOR CODE zener diodes color coded zener color codes colour code zener zener diode code color zener diode color code colour code diode zener 1W ZENER DIODE zener diode color code band 1w zener

    B210G

    Abstract: Schottky b210
    Text: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		PDF MBRS2H100T3G MBRS2H100/D B210G Schottky b210

    zener diode c12

    Abstract: ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener
    Text: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And


    Original     		PDF 1N4728G-1N4758G DO-41 DO-41 56Volts. MIL-STD-202, 260oC//10 zener diode c12 ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener

    Untitled

    Abstract: No abstract text available
    Text: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg


    Original     		PDF MBR20200CT MBR20200CT/D

    MBR20200CTG

    Abstract: MBR20200CT MBR20200CT-G
    Text: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg


    Original     		PDF MBR20200CT MBR20200CT/D MBR20200CTG MBR20200CT MBR20200CT-G

    B8H100G

    Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D B8H100G B8H100 MBRB8H100T4G B8H1 C146C marking 146C

    b8h100g

    Abstract: MBRB8H100T4G
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G

    b8h100g

    Abstract: No abstract text available
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g

    b8h100g

    Abstract: MBRB8H100T4G
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G

    FDS6681Z

    Abstract: No abstract text available
    Text: FDS6681Z 30 Volt P-Channel PowerTrench MOSFET Features General Description • –20 A, –30 V. This P-Channel MOSFET is produced using Fairchild ® Semiconductor’s advanced PowerTrench process that RDS ON = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V


    Original     		PDF FDS6681Z FDS6681Z

    Untitled

    Abstract: No abstract text available
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D

    b8h100g

    Abstract: B8H100
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G AEC-Q101 MBRB8H100/D b8h100g B8H100

    Untitled

    Abstract: No abstract text available
    Text: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G, NBRB8H100T4G MBRB8H100/D

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3416 Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA


    Original     		PDF 2N3416 300mA

    2N3416

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3416 Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA


    Original     		PDF 2N3416 300mA 2N3416

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA64 Features • This device is designed for applications requiring extremely high current gain at currents to 800mA. Marking Code: MMBTA64=2V


    Original     		PDF MMBTA64 800mA. MMBTA64 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT46W Features 200mW • High breakdown Voltage • Low turn-on voltage • • Guard ring construction for transient protection


    Original     		PDF BAT46W 200mW OD123

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT720 Features x x x • • • Very Low Forward Voltage Drop. Guard Ring Protected Untral Small Surface Mount Package


    Original     		PDF BAT720 350mW OT-23