Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LM3Z2V4T1 SERIES 200 mW SOD–323 Surface Mount 1 ORDERING INFORMATION Device * Package Shipping LM3ZxxxT1 SOD–323 3000/Tape & Reel 2 SOD– 323 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical
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3000/Tape
OD-323
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MM3Z75VT1
Abstract: MM3Z39VT1 marking code zener 242
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators MM3Z2V4T1 SERIES 200 mW SOD–323 Surface Mount 1 ORDERING INFORMATION Device * Package Shipping MM3ZxxxT1 SOD–323 3000/Tape & Reel 2 CASE 477–02, STYLE 1 SOD– 323 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical
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3000/Tape
MM3Z75VT1
MM3Z39VT1
marking code zener 242
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Untitled
Abstract: No abstract text available
Text: Ex block terminals T Dimensions Width/length/height mm with TS 35 x 7.5 W Insulation stripping length/terminal screw/screwdriver blade Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC
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RL94/9/EC
ZDUB383400000
ZS10/5
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Untitled
Abstract: No abstract text available
Text: Feed-through terminal blocks Ex ZDU 6/E T Dimensions Width/length/height mm with TS 35 x 7.5 W Insulation stripping length/clamping screw Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC
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RL94/9/EC
KEMA97ATEX2521U
KEMA97ATEX2521U2)
KEMA00ATEX2107U
10/3AN/E
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Untitled
Abstract: No abstract text available
Text: Feed-through terminal blocks Ex SAK 2.5/E EK 2.5N/E SAK 4/E EK 4/E T Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC EC type examination certificate EEx i voltage EN 50020 EEx i/EEx i distance > 6 mm1
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97ATEX1798
RL94/9/EC
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C2332
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2332J-10 1. OUTLINE DIMENSION L: 5.45 B: 3.0 w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2332-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2332.5 MHz
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TDFM3C-2332J-10
C2332-10
C2332
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bt 1840
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2426J-10 1. OUTLINE DIMENSION L: 5.2 B: 3.0 w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2426-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2426.5 MHz
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TDFM3C-2426J-10
C2426-10
CCL-H870
bt 1840
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CCL H870
Abstract: 2451
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2332J-10 1. OUTLINE DIMENSION L: 5.45 B: 3.0 w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2332-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2332.5 MHz
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TDFM3C-2332J-10
C2332-10
CCL-H870
CCL H870
2451
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2426J-10 1. OUTLINE DIMENSION L: 5.2 B: 3.0 w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2426-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2426.5 MHz
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TDFM3C-2426J-10
C2426-10
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Marking code mps
Abstract: No abstract text available
Text: NPN MPS8098, MPS8099*, (PNP) MPS8598, MPS8599* *Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com MAXIMUM RATINGS Rating MARKING DIAGRAM Symbol Collector −Emitter Voltage MPS8098, MPS8598 MPS8099, MPS8599
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MPS8098,
MPS8099*
MPS8598,
MPS8599*
MPS8598
MPS8099,
MPS8599
Marking code mps
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF TDFM3C TOKO P/N: DIELECTRIC FILTER PRELIMINARY TDFM3C-1960L-10 1. OUTLINE DIMENSION L: 6.4 1 B: 4.5 w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C1960-10 TOKO F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20
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TDFM3C-1960L-10
C1960-10
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CCL H870
Abstract: toko 4.5
Text: SPECIFICATION OF TDFM3C TOKO P/N: DIELECTRIC FILTER PRELIMINARY TDFM3C-1960L-10 1. OUTLINE DIMENSION L: 6.4 1 B: 4.5 w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C1960-10 TOKO F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20
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TDFM3C-1960L-10
C1960-10
CCL-H870
CCL H870
toko 4.5
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C1880
Abstract: Dielectric Filter
Text: SPECIFICATION OF TDFM3C DIELECTRIC FILTER PRELIMINARY TOKO P/N: TDFM3C-1880L-11 1. OUTLINE DIMENSION L: 6.8 B: 4.0 Marking : C1880-11 TOKO F Tolerance : 0.3 Unit : mm w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY (Fo)
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TDFM3C-1880L-11
C1880-11
00MHz
37217B
CCL-H870
C1880
Dielectric Filter
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION OF TDFM3C DIELECTRIC FILTER PRELIMINARY TOKO P/N: TDFM3C-1880L-11 1. OUTLINE DIMENSION L: 6.8 B: 4.0 Marking : C1880-11 TOKO F Tolerance : 0.3 Unit : mm w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY (Fo)
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TDFM3C-1880L-11
C1880-11
00MHz
37217B
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2N55551
Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit
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2N5550,
2N5551
2N5550
2N5550/D
2N55551
2N5551
2N5550RLRA
2N5550RLRP
2N5550RLRPG
2N5551G
2N5551RL1
2N5551RLRA
2N5551RLRM
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BCW69
Abstract: BCW69LT1 BCW70 BCW70LT1
Text: ON Semiconductort BCW69LT1 BCW70LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –100 mAdc Collector Current — Continuous 3 1 DEVICE MARKING
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BCW69LT1
BCW70LT1
236AB)
r14525
BCW69LT1/D
BCW69
BCW69LT1
BCW70
BCW70LT1
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2n5551
Abstract: 2N55551 2N5551 circuit 2n5550
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit
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2N5550,
2N5551
2N5550
2N5551
2N55551
2N5551 circuit
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Ta2O5 phase diagram
Abstract: EIA-535 Ta2O5
Text: TBJ Series Including CWR11 and COTS-Plus The TBJ Series encompasses five case sizes, A through E, corresponding to EIA535BAAC, the commercial industry standard. This series also offers molded body/compliant termination construction, polarity and capacitance marking. The
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CWR11
EIA535BAAC,
Ta2O5 phase diagram
EIA-535
Ta2O5
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort General Purpose Transistor MMBTA70LT1 PNP Silicon MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO −40 Vdc Emitter−Base Voltage VEBO −4.0 Vdc IC −100 mAdc Collector Current — Continuous 3 1 2 DEVICE MARKING
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MMBTA70LT1
236AF)
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Untitled
Abstract: No abstract text available
Text: MMBT3904TT1 General Purpose Transistors MMBT3904TT1 – NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. • Device Marking:
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MMBT3904TT1
MMBT3904TT1
416/SC
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1N916
Abstract: MMBT3904TT1 MMBT3904WT1 SMD310
Text: MMBT3904TT1 General Purpose Transistors MMBT3904TT1 – NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. • Device Marking:
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MMBT3904TT1
416/SC
r14525
MMBT3904TT1/D
1N916
MMBT3904TT1
MMBT3904WT1
SMD310
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Untitled
Abstract: No abstract text available
Text: WP SERIES IP67 UV-PROTECT PLASTIC ENCLOSURE What's IP67? ●IP Code is an "Ingress Protection Marking" under IEC 60529 and rates the degree of protection provided against the intrusion, dust, and water. IP6x : Completely protected against contact dust tight
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WP9-13-3
WP9-13-4
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MMBTA70LT1
Abstract: 50K MARKING SOT23
Text: ON Semiconductort General Purpose Transistor MMBTA70LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc Collector Current — Continuous 3 1 2 DEVICE MARKING
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MMBTA70LT1
236AF)
r14525
MMBTA70LT1/D
MMBTA70LT1
50K MARKING SOT23
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Untitled
Abstract: No abstract text available
Text: MMBT3906TT1 General Purpose Transistors MMBT3906TT1 − PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. • Device Marking:
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MMBT3906TT1
OT-416/SC-75
MMBT3906TT1
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