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    MARKING MMBT6517 Result Highlights (6)

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    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    MARKING MMBT6517 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		PDF MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520

    Untitled

    Abstract: No abstract text available
    Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5


    Original     		PDF MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating


    Original     		PDF MMBT6517 MMBT6517 100uAdc, 10uAdc, 250Vdc 10Vdc) 10mAdc, 30mAdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating


    Original     		PDF MMBT6517 MMBT6517 100uAdc, 10uAdc, 250Vdc 10Vdc) 10mAdc, 30mAdc,

    MMBT6517

    Abstract: marking mmbt6517
    Text: Transistors SMD Type High Voltage Transistors MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


    Original     		PDF MMBT6517 OT-23 MMBT6517 marking mmbt6517

    Untitled

    Abstract: No abstract text available
    Text: Product specification MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25


    Original     		PDF MMBT6517 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT6517 Features • x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1


    Original     		PDF MMBT6517 100uAdc, 10uAdc, 250Vdc

    MMBT6517LT

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous


    Original     		PDF MMBT6517LT1 236AB) 1/2MSD7000 MMBT6517LT

    msd7000

    Abstract: MMBT6517LT1
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage


    Original     		PDF MMBT6517LT1 236AB) msd7000 MMBT6517LT1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current


    Original     		PDF MMBT6517LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current


    Original     		PDF MMBT6517LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 350 Vdc Collector – Base Voltage


    Original     		PDF MMBT6517LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 350 Vdc Collector −Base Voltage VCBO 350 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc


    Original     		PDF MMBT6517LT1 236AB) 15the

    Untitled

    Abstract: No abstract text available
    Text: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 350 V Collector − Base Voltage


    Original     		PDF MMBT6517LT1G MMBT6517LT1/D

    MMBT6517LT1G

    Abstract: MMBT6517LT3G marking code 1z
    Text: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage


    Original     		PDF MMBT6517LT1G MMBT6517LT1/D MMBT6517LT1G MMBT6517LT3G marking code 1z

    Untitled

    Abstract: No abstract text available
    Text: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage


    Original     		PDF MMBT6517LT1G MMBT6517LT1/D

    MMBT6517LT1

    Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z
    Text: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 Vdc Collectorā -āBase Voltage VCBO 350 Vdc


    Original     		PDF MMBT6517LT1 MMBT6517LT1/D MMBT6517LT1 MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z

    MMBT6517LT1

    Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G 300MS
    Text: MMBT6517LT1 High Voltage Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 Vdc Collector − Base Voltage VCBO 350 Vdc Emitter − Base Voltage


    Original     		PDF MMBT6517LT1 MMBT6517LT1/D MMBT6517LT1 MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G 300MS

    NSVMMBT6517LT1G

    Abstract: No abstract text available
    Text: MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS


    Original     		PDF MMBT6517L, NSVMMBT6517L MMBT6517LT1/D NSVMMBT6517LT1G

    MMBT6517LT1

    Abstract: No abstract text available
    Text: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous


    Original     		PDF MMBT6517LT1 236AB) r14525 MMBT6517LT1/D MMBT6517LT1

    marking 8b sot-23

    Abstract: MMBT6517LT1
    Text: MOTOROLA Order this document by MMBT6517LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original     		PDF MMBT6517LT1/D MMBT6517LT1 236AB) MMBT6517LT1/D* marking 8b sot-23 MMBT6517LT1

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


    Original     		PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    G1 TRANSISTOR SOT 23 PNP

    Abstract: transistor marking 2L
    Text: SOT-23 TRANSISTORS continued Darlingtons The following table is a listing of small-signal devices that have very high hpE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1-Base, 2-Emitter, 3-Collector


    OCR Scan     		PDF OT-23 MMBTA14LT1 MMBTA13LT1 MMBTA64LT1 MMBT6517LT1 MMBTA42LT1 MMBT5551LT1 MMBT6520LT1 MMBTA92LT1 MMBT5401LT1 G1 TRANSISTOR SOT 23 PNP transistor marking 2L