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    MARKING MA SOT143 Search Results

    MARKING MA SOT143 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING MA SOT143 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 93A

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
    Text: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original
    PDF OT-143 Q62702-F1144 900MHz Dec-16-1996 marking 93A RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144

    80846

    Abstract: 022241 gummel
    Text: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143


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    PDF OT-143 Q62702-F1611 900MHz Dec-11-1996 80846 022241 gummel

    marking 93A

    Abstract: TRANSISTOR BI 187
    Text: BFP 93A NPN Silicon RF Transistor 3  For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A


    Original
    PDF VPS05178 OT-143 900MHz Oct-12-1999 marking 93A TRANSISTOR BI 187

    Untitled

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


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    PDF BFP181R OT143R

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


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    PDF BFP181R OT143R BFP181R

    BFP181R

    Abstract: No abstract text available
    Text: BFP181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R


    Original
    PDF BFP181R OT143R Jun-21-2001 BFP181R

    Q62702-F1594

    Abstract: transistor marking RHs
    Text: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original
    PDF OT-143R Q62702-F1594 900MHz Jan-21-1997 Q62702-F1594 transistor marking RHs

    Untitled

    Abstract: No abstract text available
    Text: BFP 181R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA  fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R


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    PDF OT-143R Oct-12-1999

    GMA marking

    Abstract: IC 2272
    Text: BFP 182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R


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    PDF OT-143R 900MHz Oct-12-1999 GMA marking IC 2272

    SPICE 2G6

    Abstract: No abstract text available
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


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    PDF BFP183R OT143R SPICE 2G6

    sot143 Marking code RHs

    Abstract: Q62702-F1382
    Text: BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original
    PDF OT-143 Q62702-F1382 900MHz Dec-13-1996 sot143 Marking code RHs Q62702-F1382

    transistor marking RHs

    Abstract: G1816
    Text: BFP 183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R


    Original
    PDF OT-143R 900MHz Oct-12-1999 transistor marking RHs G1816

    BFP182R

    Abstract: TRANSISTOR BI 187
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


    Original
    PDF BFP182R OT143R 900MHz Aug-09-2001 BFP182R TRANSISTOR BI 187

    BFP183R

    Abstract: transistor marking RHs
    Text: BFP183R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs


    Original
    PDF BFP183R OT143R 900MHz Aug-09-2001 BFP183R transistor marking RHs

    Untitled

    Abstract: No abstract text available
    Text: BFP182R NPN Silicon RF Transistor  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA  fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs


    Original
    PDF BFP182R OT143R

    Untitled

    Abstract: No abstract text available
    Text: BFP182 NPN Silicon RF Transistor 3  For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


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    PDF BFP182 VPS05178 OT143

    sot143 Marking code RHs

    Abstract: No abstract text available
    Text: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original
    PDF BFP183 VPS05178 OT143 sot143 Marking code RHs

    bfp183

    Abstract: VPS05178
    Text: BFP183 NPN Silicon RF Transistor 3  For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4  fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking


    Original
    PDF BFP183 VPS05178 OT143 900MHz Aug-10-2001 bfp183 VPS05178

    marking 93A

    Abstract: No abstract text available
    Text: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type


    OCR Scan
    PDF Q62702-F1144 OT-143 900MHz marking 93A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


    OCR Scan
    PDF Q62702-F1611 OT-143 0535bOS 900MHz fl235b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs


    OCR Scan
    PDF Q62702-F1611 OT-143 900MHz

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan
    PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan
    PDF Q62702-F1382 OT-143 235bQ5 BFP183 900MHz

    BF96I

    Abstract: T0-50 s525 BF964S BF96
    Text: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA


    OCR Scan
    PDF OT143 OT343 BF994S BF995 BF996S BF998 S888T BF543 S525T BF96I T0-50 s525 BF964S BF96