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    MARKING LS NEC Search Results

    MARKING LS NEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING LS NEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ621

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    d1823

    Abstract: No abstract text available
    Text: Pomona Model 1823 Double Banana Plug Splice FEATURES: • Provides rapid method for splicing cables. • Reduces necessity of storing extra long cables. • 4.2 .166 dia. Banana Jacks. MATERIALS: Upper Conn: Double Banana Jack Material: Brass per QQ-B-626, Alloy 360, ½ Hard.


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    PDF QQ-B-626, QQ-N-290, 00\D1823 d1823

    Untitled

    Abstract: No abstract text available
    Text: Pomona Model 1823 Double Banana Plug Splice FEATURES: • Provides rapid method for splicing cables. • Reduces necessity of storing extra long cables. • 4.2 .166 dia. Banana Jacks. MATERIALS: Upper Conn: Double Banana Jack Material: Brass per QQ-B-626, Alloy 360, ½ Hard.


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    PDF QQ-B-626, QQ-N-290, \Release\DataSheets\FlukeDataSheet\d1823

    d1823

    Abstract: No abstract text available
    Text: Pomona Model 1823 Double Banana Plug Splice FEATURES: • Provides rapid method for splicing cables. • Reduces necessity of storing extra long cables. • 4.2 .166 dia. Banana Jacks. MATERIALS: Upper Conn: Double Banana Jack Material: Brass per QQ-B-626, Alloy 360, ½ Hard.


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    PDF QQ-B-626, QQ-N-290, \Release\DataSheets\FlukeDataSheet\d1823 d1823

    Q65110A2437

    Abstract: A671 transistor Q62902B0156F222 Q65110A1890 transistor a673 led verde 5mm Q62901B0062 A673 transistor LS M67K-J2L1-1 Q62902B0152F222
    Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES Sicherheitshinweise Safety Instructions OSRAM LEDs erreichen aufgrund von neuen Chip-Technologien immer höhere optische Leistungen. Wir empfehlen daher, schon bei der Entwicklung von Geräten, die zu


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    Untitled

    Abstract: No abstract text available
    Text: TUSB1210 Standalone USB Transceiver Chip Silicon Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.


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    PDF TUSB1210 SLLSE09F SLLSE09F

    Q62901B0065

    Abstract: Q62902B0152F222 Q62902B0156F222 A671 transistor lrtbg6sg Q65110A4187 osram LW Y3SG OSRAM Q62902B0152F222 Q65110A1890 Q62901B0062
    Text: kakakak Light Emitting Diodes Lumineszenzdioden 75 Light Emitting Diodes .Lumineszenzdioden . 75 Safety Instructions .


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    Untitled

    Abstract: No abstract text available
    Text: D a t a S h e e t • Te r m i n a l Disconnect test terminals WTL 4/2 STB Disconnect test terminals are put to use in all kinds of applications where it becomes necessary to tap into the electrical circuits for test and control purposes. In order to perform the measuring


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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Q62902-B152-F222

    Abstract: Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676
    Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system Gurtung von Lumineszenzdioden Taping of LEDs Alle SMT-LED werden im 8- bzw. 12-mm Gurt geliefert.


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    PDF 12-mm Q62902-B141-F222 GPXY6739 Q62902-B155-F222 GPXY6738 Q62902-B152-F222 Q62902-B156-F222 Q62901-B65 led verde 5mm P5101 A0324 LY 3360-K Datenblatt lm776 A671 transistor OSRam LSG T676

    Q62902-B152-F222

    Abstract: Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1
    Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LUMINESZENZDIODEN LIGHT EMITTING DIODES LIGHT EMITTING DIODES Taping of LEDs SMT LED type designation system Gurtung von Lumineszenzdioden All SMT LEDs are available in 8 mm resp. 12 mm tapes. SMT-LED-Typenbezeichnungsschema


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    PDF 12-mm Q62902-B141-F222 GPXY6739 Q62902-B155-F222 GPXY6738 Q62902-B152-F222 Q62902-B155 Q62902-B141 LM776 3360D Q62703P5269 Q62902-B152 Q62703Q5109 Q62703-Q5083 T676-P1Q1-1

    lg led tv electronic diagram

    Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
    Text: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .


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    Q62902-B152-F222

    Abstract: lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20
    Text: LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES LUMINESZENZDIODEN LIGHT EMITTING DIODES SMT-LED-Typenbezeichnungsschema SMT LED type designation system 2nd and 3rd letter for the color of all MULTILED package outlines higher wavelength = first letter, lower wavelength = second and third letter


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    PDF Q62902-B154-F222 Q62902-B141-F222 GPXY6739 GPXY6738 Q62902-B152-F222 lg led tv electronic diagram Q62902-B156-F222 Q62902-B155 A671 transistor Q62901-B65 BZW 70/20 Q62901-B62 a5954 Datasheet diode BZW 70-20

    Untitled

    Abstract: No abstract text available
    Text: NEC N E C / CALIFORNIA 15 E D • b427414 7 OOOl'ilM 5 ■ X TO K-BAND GaAs SCHO TTKY BA RRIER MIXER DIO DE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B TYP at f = 10 GHz SYM BO LS U N IT S R A T IN G S


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    PDF b427414 ND5051-3A ND5051-3G ND5051-5E ND5051 D5051-3A 5051-3G D5051-5E ND5051-3A, ND5051-3G,

    Microwave PIN diode

    Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
    Text: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61


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    PDF fa4274m ND6000 T-07-/S ND6261 ND6361, ND6461, ND6481, ND6651. ND6261, Microwave PIN diode N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a

    PJ 3139

    Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
    Text: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “


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    PDF b427414 Q001bS3 NE25137 NE25139 NE251 NE76084 Rn/50 PJ 3139 NEC Ga FET marking L NE25139 DUAL FET marking JE FET fet dual gate sot143

    FUJISOKU

    Abstract: No abstract text available
    Text: f i/ W B U A — U v h - T A v * Low Current Dry Circuit Miniature Lever & Rocker Switches •Why is gold plating necessary ? - a# v^izte, <*n Ti'Sfo tRCìSSifii/tfc'héKx & £ M & tL X t< ’titz ft ‘m n ^ x ^ T o j§ m ( c r a f iic iiic u s ^ ^ s


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    PDF DC20V 100mA AC200juV AC1000V DC500V) 8V1012B-M 8V1042B-M 8V1062B-M 8V2012B-M 8V2042B-M FUJISOKU

    1SS105

    Abstract: 1SS105A 1SS11 1SS11-3G diode 5f ND5051-3G ND5052-3G ND5111-3G 1SS105A3G 3g marking
    Text: N E C / C A L IF O R N I A 1=427414 G D D n i O 1SE D NEC T-cî-ùl A G aA s EPITAXIAL SCH O TTKY B A R R IE R DIO DE ND5000 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • LOW C O N V E R SIO N L O S S The ND5000, GaAs Epitaxial Schottky Barriercliodes, offer low


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    PDF 14E7414 ND5000 ND5000, ND5111, ND5112, ND5113 ND5112 ND5111 1SS105 1SS105A 1SS11 1SS11-3G diode 5f ND5051-3G ND5052-3G ND5111-3G 1SS105A3G 3g marking

    IN3070

    Abstract: 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 1N4938UR-1 DIODE EJL
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 Aug 94. MIL-S-19500/169H 19 Mav 1994 SUPERSEDING MIL-S-19500/169G 30 July 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING,


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    PDF MIL-S-19500/169H MIL-S-19500/169G 1N3070, 1N3070-1, 1N3070UR-1, 1N49M, 1N493A-1, 1N4938UR-1 MIL-S-19500. JANCA4938) IN3070 1N493A 1N3070 JANTX HA 4016 1N3070 1N3070-1 1N3070UR-1 DIODE EJL

    Untitled

    Abstract: No abstract text available
    Text: This information is given as an indication. In the continual goal to improve our products, we reserve the right to make any modifications judged necessary 4112-9212 B S |1 R A D I ALL P ^ S ] Microwave components 5 0 0 TERMINATED R574 322630 T E C H N I C A L DATA S H E E T


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    2SC1653

    Abstract: No abstract text available
    Text: NEC / “ t “ SILICON TRANSISTORS / 2 S C 1 6 5 3 ,2 S C 16 5 4 D IS P L A Y T U B E D R IV E,H IG H V O LTA G E S W IT C H IN G NPN S ILIC O N E P IT A X IA L T R A N S IS T O R MINI MOLD FEATURES PACKAGE DIMENSIONS • High V o lta g e V C E 0 : 2 S C 1 6 5 3 Î3 0 V , 2 S C I6 5 4 1 6 0 V


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    PDF 2SC1653 2SC1654 2SC1653

    LT 2806

    Abstract: trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12
    Text: z r — •$? • y — h NEC X " f y 3- > 'J $'<4 K Switching Diode 1SS123 w .n & M x t ° ^ = ¥ v 7 7; u i i v f; = i > ^ 7 ; u ^ y ^ - - k w & T s 'iv + y v m Silicon Epitaxial Double Diode (Series Connected) High Speed Switching W& / PACKAGE DIMENSIONS


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    PDF 1SS123 LT 2806 trr M7 diode dc m7 pnp 855 1SS123 JT MARKING 1SS12

    Microwave PIN diode

    Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
    Text: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71


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    PDF b4E7M14 ND6000 ND6261 ND6361, ND6461, ND6481, ND6651, ND6261, 71r81, Microwave PIN diode 1SV36 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471