Y parameters of transistors
Abstract: power transistor transistors equivalents transistor equivalent table MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor 2N2219 data sheet 1721E50R MARKING 41B transistor marking pl y1 marking code transistor similar 2N2219 transistor
Text: Philips Semiconductors RF & Microwave Power Transistors General MARKING CODES FOR RF POWER TRANSISTORS MARKING CODES FOR MICROWAVE TRANSISTORS For the purposes of matched pair applications, RF power MOS transistors are marked with a code that indicates their gate-source voltage range see Table 8 .
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MC3403
2N2219
1N4148
MBC775
Y parameters of transistors
power transistor transistors equivalents
transistor equivalent table
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
transistor 2N2219 data sheet
1721E50R
MARKING 41B
transistor marking pl
y1 marking code transistor
similar 2N2219 transistor
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LBE2003S
Abstract: LBE2009S LCE2009S SC15
Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Mar 03 Philips Semiconductors Product specification LBE2003S;
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LBE2003S;
LBE2009S;
LCE2009S
LBE2003S
LBE2009S
OT441A
LCE2009S
SC15
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power transistors table
Abstract: LBE2003S LBE2009S
Text: DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors Product specification Supersedes data of 1997 Mar 03 1998 Feb 16 Philips Semiconductors Product specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES
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LBE2003S;
LBE2009S
LBE2003S
LBE2009S
SCA57
125108/00/03/pp16
power transistors table
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zkb* vac
Abstract: LINDNER fuses WEIDMULLER WDU2.5 IEC 947-7-1 terminal block 400v diode catalogue LINDNER fuses neozed WPE 35 EARTH 101050 level measurement with displacer SIBA FUSE FF D-FUSE E-16
Text: Terminals New in this catalogue W-Series Installation terminal blocks WPE 35 N Page 2/14 different colour versions ZQV Cross-connections Page 2/5 Installation terminal blocks WDU 35 N Pluggable cross-connections for WDU 2.5 Page 2/9 Page 2/4 Cross-connections
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TS15/TS35
zkb* vac
LINDNER fuses
WEIDMULLER WDU2.5
IEC 947-7-1 terminal block 400v
diode catalogue
LINDNER fuses neozed
WPE 35 EARTH 101050
level measurement with displacer
SIBA FUSE FF
D-FUSE E-16
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Zener Diode SOT-23 929b
Abstract: 13.8 8w zener diode zener diode t5 MMSZ4V7T1 MOTOROLA 929B 953b X2 diode zener zener diode T3 Marking diodes zener de 3.5 volts 938B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 225 mW SOT-23 Zener Voltage Regulator Diodes 225 mW SOT-23 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Voltage Regulator Diodes 3 Cathode Manufacturing Locations: 1 Anode WAFER FAB: Phoenix, Arizona
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OT-23
03A-03
Zener Diode SOT-23 929b
13.8 8w zener diode
zener diode t5
MMSZ4V7T1
MOTOROLA 929B
953b
X2 diode zener
zener diode T3 Marking
diodes zener de 3.5 volts
938B
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED 01-06-20 R. MONNIN Drawing updated to reflect current requirements. - ro THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET
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10-BIT
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QML-38535
Abstract: 5962-E194-02
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Drawing updated to reflect current requirements. –rrp APPROVED 02-01-11 R. MONNIN REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY
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16-BIT
QML-38535
5962-E194-02
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GENERAL SEMICONDUCTOR MARKING lg 68a
Abstract: motorola ZENER 39a 1SMB12AT3 436 LZ 051 6V8A 1SMB70CAT3 LMC 447 MOTOROLA 6v8a 1SMB11CAT3 1SMB10CAT3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 600 WATT PEAK POWER Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low
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953B
Abstract: MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b motorola diode marking 925b ZENER 1 WATT 6.8V 3 Watt Zener Diode 914B 955B 919b diode 923b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts
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1SMB5913BT3
1SMB5956BT3
953B
MOTOROLA 929B
PLASTIC SURFACE MOUNT ZENER DIODES marking 918b
motorola diode marking 925b
ZENER 1 WATT 6.8V
3 Watt Zener Diode
914B
955B
919b diode
923b
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1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking
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LAE4001R
LAE4002S
LBE2003S
LBE2009S
LCE2009S
LEE1015T
LTE21009R
LTE21015R
LTE21025R
LTE42005S
1721E50R
Marking Codes
Philips MARKING CODE
2327E40R
marking codes transistors
transistor 502
r8 marking
marking Code philips
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A530B
Abstract: HSDC614H1B HSDC614-H-1B
Text: r> PIN WHITE EPOXY INKPART MARKING 2.2 SO PIN 19 REF PIN 36 (R EF) 10 II 12 13 14 15 16 17 18 O M PUTER ¡O N V E R S IO N S □ R P O R A T IO N F S C M :B 1 D 8 B MODEL: H S D C B Í 4 - H - 1 B • PIN 18 (REF) DATE CODE-» (STAMPED) \ SERIAL NUMBER (STAMPED)
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6108B
SPECIFICATIONS----A530Ã
fB5307
A5308
A530B
HSDC614H1B
HSDC614-H-1B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.
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LBE/LCE1004R
LBE/LCE1010R
E2003S
LBE/LCE2009S)
E1004R
E1010R
1004R
1010R
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LBE1004R
Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
Text: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/LCE1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.
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LBE/LCE1004R
LBE/LCE2003S
LBE/LCE2009S)
LBE/LCE1010R
LBE1004R
LBE1010R
LCE1004R
LCE1010R
IEC134)
1004R
amplifier marking _1
TDA 5331
amplifier marking code D
auo 002
marking S3 amplifier
Marking LBE
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YTS3904
Abstract: YTS3906
Text: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity
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YTS3904
YTS3906
SC-59
Ta-25
VCE-20V,
IC-10mA
f-100MHz
20per*
YTS3904
YTS3906
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IC BL 176A
Abstract: No abstract text available
Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz.
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LBE/LCE2003S
LBE/LCE2009S
LBE/LCE2009SA
LBE2003S
LBE2009S
LCE2003S
LCE2009S
LBE2009SA
LCE2009SA
IC BL 176A
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409 Marking Code
Abstract: Data Handbook sc15
Text: Philips Semiconductors Product specification LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors FEATURES DESCRIPTION • Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal
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LBE2003S;
LBE2009S;
LCE2009S
LBE2003S
LBE2009S
OT441A
LCE2009S
OT442A
LBE2003S
LBE2009S
409 Marking Code
Data Handbook sc15
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LBE2003S
Abstract: LBE2009S LCE2009S SC15
Text: DISCRETE SEMICONDUCTORS LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Sem iconductors This Material Copyrighted By Its Respective Manufacturer
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LBE2003S;
LBE2009S;
LCE2009S
LBE2003S
LBE2009S
OT441A
LCE2009S
SC15
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LBE2003S
Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
Text: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA PHILIPS I N T E RNATIONAL 5bE D • 711QA2b ODMblflS ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN transistors fo r use in a co m m o n -e m itte r class-A linear p o w e r a m p lifie r up to 4 GHz. D iffused e m itte r ballasting resistors, self-aligned process e n tire ly ion im planted and gold m e ta lliza tio n
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LBE/LCE2003S
LBE/LCE2009S
LBE/LCE2009SA
7110fl2b
LBE2003S
LBE2009S
LCE2003S
LCE2009S
LBE2009SA
LCE2009SA
sfe 5,5 ma
46 MARKING CODE
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D 823 transistor
Abstract: BF56 BF821S
Text: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power
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"marking nh"
Abstract: 1SMB10 1SMB10A 1SMB11 1SMB11A 1SMB12 1SMB12A 1SMB13 1SMB170 403A-01
Text: M O T O R O L A SC D IOD ES / OP T O 5SÉ b3L7555 DDÒIBET □ J> MOTOROLA Order this data sheet by 1SMB5.Ô/D T - a - 2 3 SEMICONDUCTOR piivjì TECHNICAL DATA 1SMB5.0, A Zener O vervoltage Transient Su p p re sso rs thru 1SM B170, A . . . this device is designed specifically for transient voltage suppression. The wide leads
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b3L7555
T-a-23
"marking nh"
1SMB10
1SMB10A
1SMB11
1SMB11A
1SMB12
1SMB12A
1SMB13
1SMB170
403A-01
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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GENERAL SEMICONDUCTOR MARKING lg 68a
Abstract: 33A d P6SMB15CA motorola ZENER 39a 1SMB12AT3 436 LZ ZENER SMB marking KR 1SMB11CAT3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G EN ER A L DATA 600 WATT PEAK POWER GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP Zener Transient Voltage Suppressors The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low
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0J220
b3b72SS
GENERAL SEMICONDUCTOR MARKING lg 68a
33A d
P6SMB15CA
motorola ZENER 39a
1SMB12AT3
436 LZ
ZENER SMB marking KR
1SMB11CAT3
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51a zener
Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
Text: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
2306C
1SMB5913A
2415S
51a zener
motorola ZENER 39a
10029a
1SMB5917A
6833a
1SMB5914A
Motorola Zener
1SMB5915A
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Diode Marking ZM Motorola
Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:
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1SMB5913A/D
1SMB5913A,
1SMB5956A,
1SMB5913A
241Sb
C6459&
Diode Marking ZM Motorola
DIODE MOTOROLA 39A
ZENER 18-2 5t
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