SST502
Abstract: SST5114 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
Text: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7
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SST502
SST502
SST503
SST504
SST505
SST506
SST507
SST508
SST509
SST510
SST5114
SST503
SST504
SST505
SST506
SST507
SST508
SST509
SST510
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SST511
Abstract: SST506 SST5114 Diode SOT-23 marking L5 SST502 SST503 SST504 SST505 SST507 SST508
Text: SST502 Series Current Regulator Diodes—POV min 45 V SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510 SST511 TO-236 (SOT-23) Product Summary Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43 L2 SST507 1.80 L7
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SST502
SST502
SST503
SST504
SST505
SST506
SST507
SST508
SST509
SST510
SST511
SST506
SST5114
Diode SOT-23 marking L5
SST503
SST504
SST505
SST507
SST508
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Untitled
Abstract: No abstract text available
Text: DRA2123E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123E Unit: mm • Features Low collector-emitter saturation voltage VCE sat Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: L2
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DRA2123E
DRC2123E
UL-94
DRA2123E0L
SC-59A
O-236ts.
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Field-Effect Transistors
Abstract: SOT54variant diodes PACKAGE
Text: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes 1999 May 11 PACKAGE INFORMATION Page SOD68 . SOD110 . SOD323 . SOD523 . SOT23 . SOT54 . SOT54variant . SOT143B . SOT143R . SOT323 . SOT343N
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OD110
OD323
OD523
OT54variant
OT143B
OT143R
OT323
OT343N
OT343R
OT363
Field-Effect Transistors
SOT54variant
diodes PACKAGE
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 1.6 @ VGS= 4.5V
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DMN62D1SFB
DS35252
DMN62D1SFB
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery
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DMN3730UFB4
AEC-Q101
DS35017
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824022
Abstract: WE-TVS W22XY sot23 marking JB tlp 8a dut79
Text: Specification for release Customer : Ordercode: Description: Package: 824022 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2009-02-03 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - bidirectional • Provide ESD Protection for each line to
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OT23-3L
5/50ns)
OT23-3L
UL94V-0
D-74638
824022
WE-TVS
W22XY
sot23 marking JB
tlp 8a
dut79
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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UL26
Abstract: 6L-USBLC6-2SC6 USBLC6-2SC6 STMicroelectronics date code format ecopack SMP75-8 JESD97 marking illustrations
Text: USBLC6-2 Very low capacitance ESD protection Features • ■ ■ ■ ■ ■ 2 data lines protection Protects VBUS Very low capacitance: 3.5 pF max. Very low leakage current: 150 nA max. SOT-666 and SOT23-6L packages RoHS compliant SOT23-6L USBLC6-2SC6 Benefits
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OT-666
OT23-6L
OT23-6L
OT-666
UL26
6L-USBLC6-2SC6
USBLC6-2SC6
STMicroelectronics date code format ecopack
SMP75-8
JESD97
marking illustrations
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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Untitled
Abstract: No abstract text available
Text: BFR94A NPN 5 GHz wideband transistor Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits ̈ ̈ ̈ ̈ High power gain Low noise figure
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BFR94A
BFT92
AEC-Q101
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Bfr94a
Abstract: BFT92 BFR90A BFR94
Text: BFR94A NPN 5 GHz wideband transistor Rev. 3 — 15 November 2010 Product data sheet 1. Product profile 1.1 General description NPN wideband transistor in a plastic SOT23 package. PNP complement; BFT92 1.2 Features and benefits High power gain Low noise figure
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BFR94A
BFT92
AEC-Q101
Bfr94a
BFT92
BFR90A
BFR94
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BFS17A
Abstract: MSB003 E2p transistor E2p device marking Transistor E2P
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.
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BFS17A
MSB003
BFS17A
MSB003
E2p transistor
E2p device marking
Transistor E2P
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TVS 824001
Abstract: 824001 WE-TVS TVS 400 marking JB sot23 sot23 marking JB EMMA2
Text: Specification for release Customer : Ordercode: Description: Package: 824001 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2008-10-13 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
5/50ns)
OT23-6L
UL94V-0
D-74638
TVS 824001
824001
WE-TVS
TVS 400
marking JB sot23
sot23 marking JB
EMMA2
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WE-TVS
Abstract: 824014 DIODE MARKING CODE LAYOUT G SOT23 w14 wurth 3aw14
Text: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2008-10-13 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
OT23-6L
UL94V-0
D-74638
WE-TVS
824014
DIODE MARKING CODE LAYOUT G SOT23
w14 wurth
3aw14
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WE-TVS 824011
Abstract: 824011 WE-TVS DIODE MARKING CODE LAYOUT G SOT23
Text: Specification for release Customer : Ordercode: Description: Package: 824011 TVS Diode Array WE-TVS SOT23-5L DATUM / DATE : 2008-10-13 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-5L
5/50ns)
OT23-5L
UL94V-0
D-74638
WE-TVS 824011
824011
WE-TVS
DIODE MARKING CODE LAYOUT G SOT23
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E2p 28 transistor
Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.
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BFS17A
MSB003
E2p 28 transistor
transistor DATA REFERENCE handbook
RF TRANSISTOR 2.5 GHZ s parameter
E2p device marking
marking code 10 sot23
marking code ce SOT23
RF NPN POWER TRANSISTOR 2.5 GHZ
BFS17A
MSB003
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WE-TVS 824015
Abstract: 824015 WE-TVS SOT23-6L Marking Code sot23 marking JB SOT23 component marking code 5a
Text: Specification for release Customer : Ordercode: Description: Package: 824015 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2008-10-13 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to
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OT23-6L
5/50ns)
OT23-6L
UL94V-0
D-74638
WE-TVS 824015
824015
WE-TVS
SOT23-6L Marking Code
sot23 marking JB
SOT23 component marking code 5a
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BFS17A
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.
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BFS17A
September1995
MSB003
BFS17A
MSB003
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UL26
Abstract: No abstract text available
Text: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.
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OT-666
OT23-6L
OT23-6L
OT-666
UL26
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USBLC6-2
Abstract: UL26 USBLC6-2P6 marking illustrations
Text: USBLC6-2 Very low capacitance ESD protection Features • 2 data-line protection ■ Protects VBUS ■ Very low capacitance: 3.5 pF max. ■ Very low leakage current: 150 nA max. ■ SOT-666 and SOT23-6L packages ■ RoHS compliant SOT23-6L USBLC6-2SC6 Figure 1.
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OT-666
OT23-6L
USBLC6-2
UL26
USBLC6-2P6
marking illustrations
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GSOT05CL-V
Abstract: No abstract text available
Text: GSOT05CL-V Vishay Semiconductors Two-Line ESD-Protection in SOT23-3L Features • Two-line ESD-protection device • ESD-immunity acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge • Space saving SOT23-3L package • AEC-Q101 qualified
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GSOT05CL-V
OT23-3L
OT23-3L
AEC-Q101
2002/95/EC
2002/96/EC
GSOT05CL-V-G-08
GSOT05CL-V
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Untitled
Abstract: No abstract text available
Text: LM4041 Precision micropower shunt voltage reference Datasheet - production data Description SOT23-3L The LM4041 is a micropower shunt voltage reference, providing a stable 1.225 V output voltage, with an initial accuracy of 0.1% @ 25 °C and a low temperature coefficient. Available in
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LM4041
OT23-3L
LM4041
OT323-5L
OT23-3L
OT323-5L
DocID018817
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