FET SOT-89
Abstract: marking JE FET 2SJ288 smd marking JE MARKING JE 2SJ28 RL120 SOT89 FET marking
Text: MOSFET SMD Type P-Channel MOS Silicon FET 2SJ288 SOT-89 Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 Features +0.1 2.50-0.1 Low on resistance Very high-speed switching 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 Low-voltage drive +0.1
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2SJ288
OT-89
-250mA
--250mA
FET SOT-89
marking JE FET
2SJ288
smd marking JE
MARKING JE
2SJ28
RL120
SOT89 FET marking
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRFH8202PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) Qg (typical) RG (typical) ID (@TC(Bottom) = 25°C) 25 V 1.05 mΩ 52 1.3 nC Ω 100 h A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
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IRFH8202PbF
com/technical-info/appnotes/an-994
2013International
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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2002/95/EC)
MTM86727
MTM86727
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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2002/95/EC)
MTM86727
MTM86727
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marking JE FET
Abstract: MTM86727
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package
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2002/95/EC)
MTM86727
MTM86727
marking JE FET
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 4502 2SK1961 i N-Channel Junction Silicon FET SAßiYO i High-Frequency Low-Noise Amp Applications A pp licatio n s • High-frequency low-noise amp applications. F e a tu re s • Adoption of FBET process •Large I yfs I • Small Ciss
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2SK1961
SC-43
rO-92
3C-43
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2SK772
Abstract: 2392A
Text: Ordering number: EN 2392A 2SK 772 N 0 .2 39 2A N-Channel Junction Silicon FET SA \YO i AF Amp Applications / Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C
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2SK772
10//A,
SC-43
2SK772
2392A
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2SK772
Abstract: 140je N0239
Text: Ordering number: EN 2392A N0.2392A 2SK 772 N-Channel Junction Silicon FET SA \YO i AF Amp Applications Applications Variable resistors, analog switches, AF amp, constant-current circuit Features Adoption of FBET process Absolute Maximum Ratings at Ta=25°C
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2SK772
SC-51
rO-92
3C-43
2SK772
140je
N0239
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2SK546
Abstract: No abstract text available
Text: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage
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1790B
l790B
2SK546
-10UA
SC-43
2SK546
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2SK427
Abstract: I00MH to-92 .y1 2sk427 transistor
Text: Ordering number: EN 1404A _ 2SK427 N-Channel Junction Silicon FET AM Tuner, RF Amp Applications Use • AM tuner RF amp, low-noise amp Features • Large |yfs| • Very low noise figure • Small Cfss Absolute Maximum Ratings/Ta = 25°C Drain to source voltage
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l404A
2SK427
2034/2034A
SC-43
7tlt17D7b
I00MH
to-92 .y1
2sk427 transistor
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max5310
Abstract: marking m 4pin gaas fet marking M
Text: GaAs MMICs Panasonic GN01057N GaAs N-Channel MES FET For digital CATVfront-end am plifier • Features 0 Ultra-low distortion amplifier 0 Small package: Mini 4pin A bsolute M axim um Ratings Ta = 25°C Parameter Symbol Ratings Unit 6 V V ds Power supply voltage
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GN01057N
150mW
800MHz
400MHz
800MHz
max5310
marking m 4pin
gaas fet marking M
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l0530
Abstract: 2SK445 G-D-S TO-92
Text: ?Tì?q7t. opiss7b asi Ordering number: EN 1 4 3 9 A SA i YO í 2SK445 N0.1439A N-Channel Junction Silicon FET i Video Camera Applications Features • Large |yfs| • Small cjs$ • Very low noise figure • High frequency, audio frequency, low noise amp Absolute Maximum Ratings/Ta = 25°C
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7117q7b
001SS7b
l439A
2SK445
SC-43
l0530
2SK445
G-D-S TO-92
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Untitled
Abstract: No abstract text available
Text: A D E - 2 0 8 - 3 8 4 Z 2SK2569 Silicon N Channel MOS FET 1 st. Edition HITACHI Application Low frequency power switching Features • Low on-resistance. RDS(on) = 2 6 & max- (at VGS = 4 V, ID = 100 mA • 2.5 V gate drive device. • Small package (MPAK).
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2SK2569
2SK2569
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2SK222
Abstract: LM 2003A LM 8361
Text: Ordering number:EN 836F _ 2 S K 2 2 2 N-Channel Junction Silicon FET SAiYO i Low-Noise AF Amp Applications FEATURES * Ultra low noise figure * Large lyfsl. • Low gate leakage current. ABSOLUTE MAXIMUM RATINGS/Ta = 25° C unit V Drain-source voltage
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2SK222
rO-92
3C-43
2SK222
LM 2003A
LM 8361
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TLP798G TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP798G U nit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP798G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a
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TLP798G
TLP798G
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN4839A N-Channel Junction Silicon FET 2SK2394 Low-Noise HF Amplifier Applications Package Dimensions Applications • A M tuner RF amplifier. unit:mm • Low-noise amplifier. 2050A [2SK2394] Features • Large I yfs I . •Small Ciss. ■Small-sized package permitting 2SK2394-applied
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EN4839A
2SK2394
2SK2394]
2SK2394-applied
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transistor c 458
Abstract: marking code g1s
Text: H ITACHI 3SK295-Silicon N Channel Dual Gate MOS FET Application U H F R F am plifier M PAK-4 Features • Low noise figure. N F = 2.0 dB typ. at f = 900 M H z • Capable of low voltage operation ; 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C
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3SK295---------Silicon
3SK295
transistor c 458
marking code g1s
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2SK1240-1243
Abstract: pa 2030a 2SK1241 2SK1240 2SK1242 2SK1243
Text: SANYO SEMICONDUCTOR CORP SEE 7T1707b D GOObTOO 3 T-3Ì -ZS 2SK1240-1243 HEMT Series 2072 N -C hannel AIGaAs/GaAs H etero J u n c tio n FET 2073 X-Band Very Low-l\loise Am p Applications 3186 F e a tu re s • Very low noise • High associated gain &
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2SK1240-1243
2SK1241
2SK1243
2SK1240-1243
pa 2030a
2SK1240
2SK1242
2SK1243
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bt 2025
Abstract: transistor bc 541 2SK334 TRANSISTOR IFW transistor Bc 542 60N11
Text: S ANYO SEMICONDUCTOR CORP 3SE D 7^707^ 00CHEE1 1 . T-29-25 —— N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEA TU RE •Because it has an ultra-compact outline, sets can be made compact. A BS O L U T E M AXIM U M RATINGS/Ta = 25° C
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T-29-25
T-91-20
SC-43
bt 2025
transistor bc 541
2SK334
TRANSISTOR IFW
transistor Bc 542
60N11
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Untitled
Abstract: No abstract text available
Text: HITACHI 3SK297-Silicon N Channel Dual Gate MOS FET Application UHF / VHF RF amplifier MPAK-4 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation "^4 1. Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute M axim um Ratings
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3SK297------------Silicon
t00313
3SK297
SC-61AA
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Untitled
Abstract: No abstract text available
Text: TOSHIBA HN3G01J TO SH IBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS AM HIGH FREQUENCY AM PLIFIER APPLICATIONS +0.2 0.1 1 .6 _ ] AUDIO FREQUENCY AM PLIFIER APPLICATIONS
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HN3G01J
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IOR9246
Abstract: No abstract text available
Text: PD 9.1608C International IQ R Rectifier IRL3103D1 FETKY MOSFET & SCHOTTKY RECTIFIER Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application
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1608C
IRL3103D1
IOR9246
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Untitled
Abstract: No abstract text available
Text: 2SK2788 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-538 Z 1st. Edition May 1997 Features • Low on-resistance RDS(o]i) = 0.12D typ (VGS = 10 V, ID= 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline
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2SK2788
ADE-208-538
D-85622
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MP6404 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-?r-MOSV 6 IN 1 MP6404 HIGH POWER HIGH SPEED SWITCHING APPLICATIONS 3-PHASE MOTOR DRIVE AND STEPPING MOTOR DRIVE APPLICATIONS • • • • 4 V Gate D rive Sm all Package by F u ll Molding (S IP 12 Pin )
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MP6404
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