u28 sensor hall
Abstract: MLX2882 u28 hall marking 865 amplifier TLE4905 equivalent ss41 hall effect sensor melexis hall current sensor HAL105 UGN3132/33/34UA US2881
Text: 865;425;5# &026#+LJK#6HQVLWLYLW\#/DWFK#### HDWXUHV#DQG#%HQHILWV## • ■ ■ ■ ■ ■ Chopper Stabilized Amplifier Stage Optimized for BDC Motor Applications New Miniature Package/Thin, High Reliability Package# Operation Down to 3.5V CMOS for Optimum Stability, Quality and Cost
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US2881
US2882
u28 sensor hall
MLX2882
u28 hall
marking 865 amplifier
TLE4905 equivalent
ss41 hall effect sensor
melexis hall current sensor
HAL105
UGN3132/33/34UA
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Untitled
Abstract: No abstract text available
Text: 0/;<3555# /RZ#3RZHU#6ZLWFK#ZLWK#6OHHS#&RQWUROOHU# HDWXUHV#DQG#%HQHILWV# # \ U D LQ LO P H U 3 Chopper Stabilized Amplifier Stage New Miniature Package/Thin, High Reliability Package CMOS for Optimum Stability, Quality and Cost Low Power Consumption On Chip Duty Cycle Controller
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MLX90222
-40oC
6300H
MLX90222
03/Oct/00
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MLX90222
Abstract: No abstract text available
Text: 0/;<3555# /RZ#3RZHU#6ZLWFK#ZLWK#6OHHS#&RQWUROOHU# HDWXUHV#DQG#%HQHILWV# # \ U D LQ LO P H U 3 Chopper Stabilized Amplifier Stage New Miniature Package/Thin, High Reliability Package CMOS for Optimum Stability, Quality and Cost Low Power Consumption On Chip Duty Cycle Controller
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MLX90222
MLX90222
-40oC
6300H
254mm
14/Apr/00
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D marking PNP
Abstract: MARKING IC RP 6 PR63
Text: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
150mA,
300mA,
100kHz
100MHz
D marking PNP
MARKING IC RP 6
PR63
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marking Y1 transistor
Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Text: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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OCR Scan
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FMB2227A
300mA.
150mA
300mA
150mA,
300mA,
100kHz
100MHz
marking Y1 transistor
y1 transistor
complementary npn-pnp power transistors
y1 npn
transistor marking y1
FMB2227A
Supersot 6
transistor y1
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transistor Y4
Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Text: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package
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OCR Scan
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FMB1020
300mA.
100uA
100mA
150mA
200mA,
100MHz
100uA,
fmb1020
transistor Y4
complementary npn-pnp power transistors
marking A1 TRANSISTOR
marking 004
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supersot 6 TE
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige
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FMBA0656
300mA.
supersot 6 TE
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transistor Y2
Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
Text: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package
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OCR Scan
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FMB3946
100mA
100MHz
100MHz
10OuA,
fmb3946
lwpPr23
transistor Y2
Y2 TRANSISTOR
marking 002
marking Y2 transistor
transistor marking y2
marking A1 TRANSISTOR
complementary npn-pnp power transistors
Supersot 6
Supersot6
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Axial Diode Wtm S2S6M P a c ka g e Uni t - mm : A X 1 0 Weight 0. 65g Typ 60V 1.3A (D I , 1 Feature • Tj=150°C • P rrs m T ’A ' ^ V ì ' I ' K ì E OUTLINE 26.5 • Tj=150°C • P r r s m Rating 7 26.5 Q 04.4 ít > Main Use
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supersot 6 TE
Abstract: No abstract text available
Text: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor
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FMB3946
100mA
100MHz
100uA,
supersot 6 TE
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm D10SD6M OUTLINE 6 0 V 10 A Feature • Tj=150°C • P r r s m Rating • Full Molded • Tj=150°C • PRRSM T ’A ' ^ V Ì ' I ' K i E • 7 [Æ - J U K Main Use • • • • • D C /D C □ V A '— ^ • mm. <f- a . o a ü î h
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D10SD6M
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M77A
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode Wtm OUTLINE D5S6M 60V 5A Feature • Tj=150°C • Tj=150°C • P R R S M 7 7A ' Ì Ì 7 V Ì ' I ' K Ì E • P r r s m Rating • y iæ - ju k • Full Molded Main Use • Switching Regulator • DC/DC Converter • DC/DC □ VA'—^
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC Z R O N I 2 MEG x 8 EVEN-SECTORED FLASH MEMORY FLASH MEMORY MT28F016S3 3V Only, Dual Supply • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10nA MAX 3V-only, dual-supply operation:
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MT28F016S3
110ns
40-Pin
110ns
40-lead
VPS12/23
0G5Gb32
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LH28F016SUR70
Abstract: LH28F008SA
Text: SHARP SPEC No. ISSUE: May 15 1996 To ; S P E C I FI Product Type 16M CAT I ONS F l a s h File M e m o r y _ L H 2 8 F 0 1 6 S U R —7 0 Model No._ L H F 1 6 S 1 0 _ ^This specifications contains 44 pages including the cover and appendix.
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LH28F0
LHF16S10
LH28F016SUR-70
TSOP56â
AA1113
LH28F016SUR70
LH28F008SA
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LTC DWG 05-08-1633
Abstract: lt1694 0-15V BSS284 LTC1694-1 LTC1694-1CS5 3D marking S0T23 LT1786F
Text: r r u r LTC1694-1 m TECHNOLOGY SMB us/I2C A c c e le r a to r F€fflTUR€S DCSCRIPTIOn • Improves SMBus/l2C Rise Time Transition ■ Ensures Data Integrity with Multiple Devices on the SMB us/I2C ■ Improves Low State Noise Margin ■ Wide Supply Voltage Range: 2.7V to 6V
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LTC1694-1
OT-23
LTC1694-1
LTC1427
10-Bit
50jaA
LTC1623
Addresses/16
LTC1663
LTC DWG 05-08-1633
lt1694
0-15V
BSS284
LTC1694-1CS5
3D marking S0T23
LT1786F
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . RELEASED FO R P U B L IC A T IO N ALL BY W C O E LE C TR O N IC S 2 R IG H T S R E V IS IO N S RESERVED. H C O RP O R ATIO N . D E S C R IP T IO N G4 -22,0MAX-5x4,0 = 20,0-4,0- -0,95 MAX. D REV PER ECR-1 0 - 0 0 0 6 6 2
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ECR-10-018652
27jum
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PDF
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Untitled
Abstract: No abstract text available
Text: SHARP SPEC No. [_ ISSUE: May 15 1996 To ; S P E C I F I C A T I O N S Product Type 1 6M F l a s h File Memory LH2 8 F 0 1 6 S U R - 7 0 Model No._ L H F 1 6 S 1 0 _ j&This specifications contains 44 pages including the cover and appendix.
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OCR Scan
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LHF16S10
protec00X1
jTSOP56--
P--1420
AA1I13
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ¿uPA61 OTA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING P a c k a g e D ra w in g s u n it: m m DESCRIPTION T h e /xP A 61 0T A is a sw itc h in g d e vice w h ich can be driven 0.32- d ire c tly by a 2.5 V p o w e r so u rce .
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uPA610TA
PA610TA
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode Wtm D4SC6M OUTLINE 60V 4A Feature • Tj=150°C • • Tj=150°C P rrs m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating • Full Molded Main Use • Switching Regulator • DC/DC Z \ yj K - S • DC/DC Converter • m m . < f- a . o a ü î h
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aveii50H
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Untitled
Abstract: No abstract text available
Text: DWG ND. ZDNE REV SH 1 SCR ND, DESCRIPTION BY DATE APPRDVED KLEC-6W6SSU.VER01 NEW RELEASE HCL-RK 12/7/06 K. LEBLANC REV - C A A 2 5 0 -10000 S E E NOTE 5 RETAINER T OP S U R F A C E OF MOTHER BO ARD N M L K J TOP S U R F A C E OF 1 DAUGHTER BOARD H G F E D
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VER01
150POS,
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KST05/06 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector Base Voltage Rating Unit 60 80 V V 60 80 4 500 350 150 V V V mA mW °C 357 °C /W V cbO : KST05 : KST06 C ollector-E m ltter Voltage
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OCR Scan
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KST05/06
KST05
KST06
KSP05
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC R O N 1 MT28F016S2 V 2 MEG x 8 FLASH MEMORY FLASH MEMORY 2 MEG x 8 S m artV o ltag e SVT-II , SECTORED ERASE FEATURES • • • • • • • • Thirty-two 64KB erase blocks Programmable sector protect Deep Power-Down Mode: 10|iA MAX Second Generation SmartV oltage* Technology (SVT-II):
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OCR Scan
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MT28F016S2
120ns,
150ns
70ns/120ns
90ns/150ns
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PDF
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lg washing machine circuit diagram
Abstract: LH28F008SA LH28F016SA LH28F016SU boP56-P-1420 LH28F800SUT
Text: I_ SPEC No. ISSUE: May 15 1996 T o ; O ft S P E C I F I C A T I O N S Product Type_8 M F l a s h F i l e M e m o r y _ LH2 8 F 8 0 0 S U R - 7 0 Mo d e l N o . _ L H F 8 0 S 0 6 _ ^ T h is s p e c if ic a t io n s co n ta in s 44 pages in c lu d in g th e cover and appendix.
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LH28F800SUR
F800SURâ
boP56-P-1420
AA1113
CV734
lg washing machine circuit diagram
LH28F008SA
LH28F016SA
LH28F016SU
LH28F800SUT
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode Wtm SF5S6 60V OUTLINE A K g IB M Feature • Tj=150°C • Tj=150°C • P R R S M T ’A ' i ^ V Î ' I ' K i E • P rrsm • 71 [ Æ - J U K • Full Molded • « lI Î E 1 . 5 k V « E • Dielectric Strength 1,5kV
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