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    MARKING HM2 Search Results

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    RC12PIE5ERPLF Amphenol Communications Solutions RC12PIE5ERPLF-HM2 FEMALE POWER CONTACT Visit Amphenol Communications Solutions
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    MARKING HM2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM200

    Abstract: HM879 marking 3A sot-89 Germanium Transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2002.02.26 Page No. : 1/3 HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. Features SOT-89 • Charger-up time is about 1 mS faster than of a germanium transistor.


    Original     		PDF HM200203 HM879 OT-89 HM200 HM879 marking 3A sot-89 Germanium Transistor

    HM2222A

    Abstract: HM2907A
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9520 Issued Date : 1997.06.18 Revised Date : 2002.04.10 Page No. : 1/3 HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications.


    Original     		PDF HE9520 HM2907A HM2907A OT-89 HM2222A HM2222A

    HM200

    Abstract: HM1300
    Text: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2002.08.15 Page No. : 1/3 MICROELECTRONICS CORP. HM1300 SILICON PNP EPITAXIAL TYPE Description • Strobo Flash Applications • Medium Power Amplifier Applications Features SOT-89 • High DC Current Ogin and Excellanr hFE Linearity


    Original     		PDF HM200202 HM1300 OT-89 -50mA) HM200 HM1300

    HM2222A

    Abstract: HPN2907A
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9521 Issued Date : 1997.06.18 Revised Date : 2002.04.10 Page No. : 1/4 HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.


    Original     		PDF HE9521 HM2222A HM2222A OT-89 HPN2907A HPN2907A

    7805 SOT89

    Abstract: 7805m 7805 sot-89 SOT-89, 7805 HM200 7805 SOT-89 1 in 7805 pin diagram H7805 H7805AM H7805BM
    Text: HI-SINCERITY Spec. No. : HM200303 Issued Date : 1998.08.01 Revised Date : 2003.07.15 Page No. : 1/3 MICROELECTRONICS CORP. H7805AM H7805BM Low Current Positive Voltage Regulator Of Surface Mount Device Description SOT-89 The H7805_M series of surface mount device regulators are easy-to-use


    Original     		PDF HM200303 H7805AM H7805BM OT-89 100mA. H7805AM, 7805 SOT89 7805m 7805 sot-89 SOT-89, 7805 HM200 7805 SOT-89 1 in 7805 pin diagram H7805 H7805AM H7805BM

    HM200

    Abstract: H7806 H7806AM H7806BM
    Text: HI-SINCERITY Spec. No. : HM200104 Issued Date : 2001.10.01 Revised Date : 2001.10.11 Page No. : 1/3 MICROELECTRONICS CORP. H7806AM H7806BM Low Current Positive Voltage Regulator Of Surface Mount Device Description SOT-89 The H7806_M series of surface mount device regulators are easy-to-use


    Original     		PDF HM200104 H7806AM H7806BM OT-89 100mA. H7806AM, HM200 H7806 H7806AM H7806BM

    transistor GK sot-89

    Abstract: HM200 sot-89 Marking GK HMM1225 HMX1225 sot marking HX HM200501
    Text: HI-SINCERITY Spec. No. : HM200501 Issued Date : 2000.07.01 Revised Date : 2005.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMX1225 / HMM1225 0.8A 300/380 VOLTAGE SCRS IGT<200uA Description The HMX1225/HMM1225 series silicon controlled rectifiers are high performance planner


    Original     		PDF HM200501 HMX1225 HMM1225 200uA HMX1225/HMM1225 OT-89 400oC 183oC 217oC 260oC transistor GK sot-89 HM200 sot-89 Marking GK HMM1225 sot marking HX HM200501

    HBT169M

    Abstract: HM200
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HM200105 Issued Date : 2001.10.01 Revised Date : 2001.11.20 Page No. : 1/4 HBT169M THYRISTORS Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These


    Original     		PDF HM200105 HBT169M OT-89 HBT169M HM200

    H7805

    Abstract: H431AM H431BM H431CM sot-89 MARKING CODE BM 1R1 marking
    Text: HI-SINCERITY Spec. No. : HM200301 Issued Date : 1998.04.08 Revised Date : 2003.05.13 Page No. : 1/5 MICROELECTRONICS CORP. H431AM/BM/CM AJDUSTABLE SHUNT REGULATOR Description The H431XM series are three-terminal adjustable regulators with guaranteed thermal stability over applicable temperature ranges. The output voltage


    Original     		PDF HM200301 H431AM/BM/CM H431XM OT-89 50ppmwithout H431AM, H431BM, H431CM H7805 H431AM H431BM H431CM sot-89 MARKING CODE BM 1R1 marking

    HM27

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE9517-B HM27

    HE6450

    Abstract: 1902 transistor HM28S
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6450 Issued Date : 1992.11.25 Revised Date : 2002.04.18 Page No. : 1/3 HM28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HM28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER Voice Rom IC audio output driver stage amplifier


    Original     		PDF HE6450 HM28S HM28S HE6450 1902 transistor

    OC 140 germanium transistor

    Abstract: germanium transistors NPN HM879 Germanium Transistor
    Text: HI-SINCERITY Spec. No. : HM200203 Issued Date : 1996.07.01 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM879 SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V And 3V Electronic Flash Use. SOT-89 Features • Charger-up time is about 1 mS faster than of a germanium transistor.


    Original     		PDF HM200203 HM879 OT-89 183oC 217oC 260oC OC 140 germanium transistor germanium transistors NPN HM879 Germanium Transistor

    HM200

    Abstract: HM3669
    Text: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching


    Original     		PDF HM200206 HM3669 HM3669 OT-89 200oC 183oC 217oC 260oC 245oC HM200

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. :HE9517 Issued Date : 1997.06.06 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE9517 OT-89 183oC 217oC 260oC

    HM200

    Abstract: HM200101 HM117 hm2001
    Text: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching


    Original     		PDF HM200101 HM117 OT-89 HM117 10sec HM200 HM200101 hm2001

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HM200207 Issued Date : 2000.12.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM772A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC converter and driver.


    Original     		PDF HM200207 HM772A HM772A OT-89 200oC 183oC 217oC 260oC 245oC

    HM2222A

    Abstract: HM2907A
    Text: HI-SINCERITY Spec. No. :HE9520 Issued Date : 1997.06.18 Revised Date : 2007.04.17 Page No. : 1/4 MICROELECTRONICS CORP. HM2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HM2907A is designed for general purpose amplifier and high speed, medium-power switching applications.


    Original     		PDF HE9520 HM2907A HM2907A OT-89 HM2222A 10sec HM2222A

    HE9521

    Abstract: HM2222A HPN2907A hpn2907
    Text: HI-SINCERITY Spec. No. :HE9521 Issued Date : 1997.06.18 Revised Date : 2008.08.04 Page No. : 1/5 MICROELECTRONICS CORP. HM2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HM2222A is designed for general purpose amplifier and high speed, medium-power switching applications.


    Original     		PDF HE9521 HM2222A HM2222A OT-89 HPN2907A 183oC 217oC 260oC HE9521 HPN2907A hpn2907

    HM200

    Abstract: HM117
    Text: HI-SINCERITY Spec. No. : HM200101 Issued Date : 2001.07.30 Revised Date : 2004.12.21 Page No. : 1/5 MICROELECTRONICS CORP. HM117 PNP EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM117 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		PDF HM200101 HM117 OT-89 HM117 183oC 217oC 260oC HM200

    strobo led

    Abstract: HM1300 MARKING BL SOT89
    Text: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM1300 Silicon PNP Epitaxial Type Transistor Description • Strobo Flash Applications • Medium Power Amplifier Applications SOT-89


    Original     		PDF HM200202 HM1300 OT-89 -50mA) 200oC 183oC 217oC 260oC 10sec strobo led HM1300 MARKING BL SOT89

    HM772A

    Abstract: HM200
    Text: HI-SINCERITY Spec. No. : HM200207 Issued Date : 2000.12.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM772A PNP Epitaxial Planar Transistor Description The HM772A is designed for use in output stage of amplifier, voltage regulator, DC-DC


    Original     		PDF HM200207 HM772A HM772A OT-89 200oC 183oC 217oC 240oC 260oC 10sec HM200

    HE6450

    Abstract: transistor h2a HM28S
    Text: HI-SINCERITY Spec. No. : HE6450 Issued Date : 1992.11.25 Revised Date : 2005.02.05 Page No. : 1/4 MICROELECTRONICS CORP. HM28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HM28S is a NPN silicon transistor, designed for use in general-purpose Speech Synthsizer Voice Rom IC audio output driver stage amplifier applications.


    Original     		PDF HE6450 HM28S HM28S 183oC 217oC 260oC HE6450 transistor h2a

    HM112

    Abstract: HM200102
    Text: HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching applications.


    Original     		PDF HM200102 HM112 OT-89 HM112 183oC 217oC 260oC HM200102

    hm112

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2007.03.02 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching


    Original     		PDF HM200102 HM112 OT-89 HM112 10sec