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Catalog Datasheet	MFG & Type	PDF	Document Tags
HM200 Abstract: HM3669 Text: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching	Original	PDF	HM200206 HM3669 HM3669 OT-89 200oC 183oC 217oC 260oC 245oC HM200

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HM200

Abstract: HM3669
Text: HI-SINCERITY Spec. No. : HM200206 Issued Date : 2000.07.01 Revised Date : 2004.11.24 Page No. : 1/4 MICROELECTRONICS CORP. HM3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM3669 is designed for using in power amplifier applications, power switching

Original

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HM200206 HM3669 HM3669 OT-89 200oC 183oC 217oC 260oC 245oC HM200