M05 SOT-23
Abstract: No abstract text available
Text: ESD/TESD* Series TESD*G2U SERIES BIDIRECTIONAL TVS DIODE ARRAY FOR LATCH-UP PROTECTION APPLICATIONS ◆ RS-232, RS-422 & RS-423 Data Lines ◆ Audio/Video Inputs SOT-23 ◆ Wireless Network Systems ◆ Digit Video Interface DVI ◆ Medical Sensors ◆ Notebook Computers
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RS-232,
RS-422
RS-423
OT-23
IEC61000-4-2
IEC61000-4-4
IEC61000-4-5
TESD03G2U
TESD05G2U
M05 SOT-23
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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marking g2u
Abstract: SW sot-363
Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz
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UPG2009TB
UPG2009TB
UPG2009TB-E3
marking g2u
SW sot-363
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz
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UPG2009TB
UPG2009TB
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET L,S BAND HIGH POWER SPDT GaAs MMIC SWITCH UPG2009TB OUTLINE DIMENSIONS Units in mm FEATURES • HIGH POWER: PIN (0.1 dB) = +34 dBm TYP PACKAGE OUTLINE S06 • LOW INSERTION LOSS: LINS = 0.25 dB TYP at f = 1 GHz LINS = 0.40 dB TYP at f = 2.5 GHz
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UPG2009TB
UPG2009TB
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marking E2W
Abstract: AP2122 G2W marking AP2122AK marking E2Y
Text: Product Brief VOLTAGE HIGH SPEED, DETECTOR EXTREMELY LOW NOISE LDO REGULATOR Description AZ70XX AP2122 Parametric Table The positive voltage regulator ICs with fabThe AP2122 AZ70XXseries seriesare ICs are under voltage detectors ricated by CMOS process. Each
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AZ70XX
AP2122
AP2122
AZ70XX
OT-89-3
marking E2W
G2W marking
AP2122AK
marking E2Y
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PG2009TB
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L- BAND High Power SPDT Switch DESCRIPTION μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500MHz to 2.5GHz, having
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PG2009TB
PG2009TB
500MHz
34dBm
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Untitled
Abstract: No abstract text available
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
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UPG2009TB
BluetoothT60
IR260
VP215
WS260
HS350
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PG2009TB
Abstract: spdt mark s22
Text: DATA SHEET GaAs INTEGRATED CIRCUIT PG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The μPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
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PG2009TB
PG2009TB
PG10191EJ02V0DS
spdt mark s22
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marking g2u
Abstract: SW SPDT 6pin VP215 HS350 UPG2009TB UPG2009TB-E3 California Eastern Laboratories gaas fet 4w
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
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UPG2009TB
UPG2009TB
HS350
marking g2u
SW SPDT 6pin
VP215
HS350
UPG2009TB-E3
California Eastern Laboratories gaas fet 4w
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Untitled
Abstract: No abstract text available
Text: NEC's L, S-BAND 4W UPG2009TB SPDT SWITCH FEATURES DESCRIPTION • LOW INSERTION LOSS: 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz The UPG2009TB is a L, S-band SPDT Single Pole Double Throw GaAs FET switch for digital cellular or
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UPG2009TB
IR260
VP215
WS260
HS350
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SW SPDT 6pin
Abstract: HS350 VP215 PG10191EJ02V0DS
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
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PG2009TB
PG2009TB
SW SPDT 6pin
HS350
VP215
PG10191EJ02V0DS
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marking g2u
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low
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PG2009TB
PG2009TB
marking g2u
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uPG2009TB
Abstract: marking g2u SW SPDT 6pin HS350 VP215
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low
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PG2009TB
PG2009TB
uPG2009TB
marking g2u
SW SPDT 6pin
HS350
VP215
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2009TB L-BAND HIGH POWER SPDT SWITCH DESCRIPTION The µPG2009TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
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PG2009TB
PG2009TB
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uPG2009TB-E3
Abstract: SW SPDT 6pin HS350 VP215
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit
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AP2122
AP2122
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marking E2W
Abstract: G2U TR
Text: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit
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AP2122
OT-23-5
AP2122
marking E2W
G2U TR
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marking E2W
Abstract: high voltage diodes AP2122
Text: Data Sheet HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR General Description Features The AP2122 series are positive voltage regulator ICs fabricated by CMOS process. Each of these ICs consists of a voltage reference, an error amplifier, a resistor network for setting output voltage, a current limit
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AP2122
AP2122
marking E2W
high voltage diodes
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29f040b
Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
Text: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3
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DMD2006F
29f040b
teradyne catalyst
Stacked 4MB Flash and 1MB SRAM
WED3C755E8MC
FLF14
kyocera 128 cqfp
CERAMIC QUAD FLATPACK CQFP
95613
hac 132
BAG PACKAGE TOP MARK tms320c6
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rtd 2668
Abstract: power amplifier 3000W with PCB ZENER h48 IR32Z relay 3500 2231 021 MTL5018 gi 9644 h48 zener MTL5521 FREQUENCY TO CURRENT CONVERTER MTL5544
Text: 2659 Technical portal and online community for Design Engineers - www.element-14.com Process Control, Timers & Counters Page Process Control Analogue Signal Conditioners . . . . . . . . . . . . Current and Voltage Controls . . . . . . . . . . . . . DIN / Energy - Meters. . . . . . . . . . . . . . . . . . . . .
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element-14
DM3600U/S1
DM3600U/S2
24x48
22x45
rtd 2668
power amplifier 3000W with PCB
ZENER h48
IR32Z
relay 3500 2231 021
MTL5018
gi 9644
h48 zener
MTL5521 FREQUENCY TO CURRENT CONVERTER
MTL5544
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