nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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marking G1m
Abstract: No abstract text available
Text: L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double
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UPG158TB
UPG158TB
UPG158TB-E3
24-Hour
marking G1m
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MARKING G1M
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz
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UPG158TB
UPG158TB
piPG158TB
24-Hour
MARKING G1M
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Untitled
Abstract: No abstract text available
Text: L, S Band SPDT GaAs MMIC Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at f = 1 GHz LINS2 = 0.4 dB TYP at f = 2 GHz LINS3 = 0.5 dB TYP at f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital
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UPG158TB
UPG158TB
UPG158TB-E3
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Untitled
Abstract: No abstract text available
Text: L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double
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UPG158TB
UPG158TB
G158TB-E3
24-Hour
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET L, S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at VCONT = +3.0 V/0 V, f = 1 GHz LINS2 = 0.4 dB TYP at VCONT = +3.0 V/0 V, f = 2 GHz LINS3 = 0.5 dB TYP at VCONT = +3.0 V/0 V, f = 2.5 GHz
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UPG158TB
UPG158TB
UPG158TB-E3
24-Hour
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Untitled
Abstract: No abstract text available
Text: L, S Band SPDT GaAs MMIC Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS1 = 0.3 dB TYP at f = 1 GHz LINS2 = 0.4 dB TYP at f = 2 GHz LINS3 = 0.5 dB TYP at f = 2.5 GHz The UPG158TB is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital
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UPG158TB
UPG158TB
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UPG158TB
Abstract: UPG158TB-E3 VP215 HS350
Text: NEC's ½W UPG158TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG158TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch developed for mobile phone and
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UPG158TB
UPG158TB
HS350
UPG158TB-E3
VP215
HS350
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C10535E
Abstract: VP15-00-3 UPG158TB
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG158TB L, S- BAND SPDT SWITCH DESCRIPTION The µPG158TB is a L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5
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PG158TB
PG158TB
C10535E
VP15-00-3
UPG158TB
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG158TB L, S- BAND SPDT SWITCH DESCRIPTION The µPG158TB is a L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5
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PG158TB
PG158TB
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VP215
Abstract: HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG158TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG158TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
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PG158TB
PG158TB
90conductor
VP215
HS350
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Untitled
Abstract: No abstract text available
Text: PIC16F753/HV753 14/16-Pin, Flash-Based 8-Bit CMOS Microcontrollers High-Performance RISC CPU: Peripheral Features: • Only 35 Instructions to Learn: - All single-cycle instructions except branches • Operating Speed: - DC – 20 MHz clock input - DC – 200 ns instruction cycle
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PIC16F753/HV753
14/16-Pin,
DS40001709A-page
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OPA660
Abstract: OPA860 OPA860ID OPA860IDR ota amplifier BJT with V-I characteristics
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331B – JUNE 2005 – REVISED JUNE 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331B
OPA860
80MHz,
95mA/V)
1600MHz,
OPA660
OPA860ID
OPA860IDR
ota amplifier
BJT with V-I characteristics
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ota amplifier
Abstract: AGC OPA660 OPA660 OPA860 OPA860ID OPA860IDR SBOS331
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331 – JUNE 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA860
SBOS331
OPA860
80MHz,
95mA/V)
1600MHz,
ota amplifier
AGC OPA660
OPA660
OPA860ID
OPA860IDR
SBOS331
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ccii
Abstract: PACKAGE MARKING RADJ SOT23 R2S sot23 transistor marking R2s OPA861 OPA861ID OPA861IDBVR OPA861IDBVT OPA861IDR transconductance amplifier spice
Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338 – AUGUST 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA861
SBOS338
OPA861
80MHz,
95mA/V)
ccii
PACKAGE MARKING RADJ SOT23
R2S sot23
transistor marking R2s
OPA861ID
OPA861IDBVR
OPA861IDBVT
OPA861IDR
transconductance amplifier spice
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA860 SBOS331A – JUNE 2005 – REVISED JANUARY 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA and BUFFER OTA FEATURES DESCRIPTION • • • • The OPA860 is a versatile monolithic component
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OPA860
SBOS331A
80MHz,
95mA/V)
OPA860
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338 – AUGUST 2005 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA861
SBOS338
80MHz,
95mA/V)
OPA861
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CCII APPLICATION
Abstract: marking R3s SBOU035
Text: BurrĆBrown Products from Texas Instruments OPA861 SBOS338D – AUGUST 2005 – REVISED AUGUST 2006 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER OTA FEATURES DESCRIPTION • • • • • The OPA861 is a versatile monolithic component designed for wide-bandwidth systems, including high
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OPA861
SBOS338D
80MHz,
95mA/V)
OPA861
CCII APPLICATION
marking R3s
SBOU035
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Untitled
Abstract: No abstract text available
Text: 2SB1184F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: B1184^Q, where ★ is hFE code and □ is lot number Dimensions (Units: mm) • low collector saturation voltage, typically VCE(Sat) = ~°-5 v f° r 6.5 ±0.2 Ò
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2SB1184F5
SC-63)
B1184
2SD1760F5
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC L,S Band SPDT Switch UPG158TB FEATURES DESCRIPTION • LOW INSERTION LOSS: T he U P G 15 8T B is an L-band S P D T S ingle Pole Double Throw G aA s FET sw itch w h ich w a s d e velope d fo r digital cellular, c ord le ss tele ph on e and o th e r L,S -band w ire le ss a p p li
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UPG158TB
UPG158TB
24-Hour
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LC256
Abstract: 8941a
Text: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O. PIPELINED, DCD SYNCBURST SRAM |U |IC =R O N MT58 LC256 K18 F 1 , MT58 LC128 K32 F 1, MT58 LC128 K36 F 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES
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LC256
LC128
8941a
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