marking g1
Abstract: G1 marking sot23 mark G1 SOT-23 sot-23 Marking G1 G1 SOT-23 BFS20 marking G1 02 MARKING G1 SOT23 marking G1 sot-23
Text: SEMICONDUCTOR BFS20 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking G1 No. 1 Item Marking Device Mark G1 BFS20 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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BFS20
OT-23
marking g1
G1 marking sot23
mark G1 SOT-23
sot-23 Marking G1
G1 SOT-23
BFS20
marking G1 02
MARKING G1 SOT23
marking G1 sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating
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LMBT5551WT1G
3000/Tape
LMBT5551WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel
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LMBT5551DW1T1G
3000/Tape
LMBT5551DW1T3G
10000/Tape
OT-363/SC-88
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TRANSISTOR SMD MARKING g1
Abstract: CMBT5551 smd transistor g1
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration
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ISO/TS16949
OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
CMBT5551
smd transistor g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT5551
C-120
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TRANSISTOR SMD MARKING g1
Abstract: SMD TRANSISTOR G1 g1 smd transistor smd transistor t A1 sot-23 npn ts 4141 TRANSISTOR smd cmbt5551 MARKING SMD TRANSISTOR P smd transistor 304 smd transistor marking g1 TRANSISTOR SMD g1
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transistor Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
TRANSISTOR SMD MARKING g1
SMD TRANSISTOR G1
g1 smd transistor
smd transistor t A1 sot-23 npn
ts 4141 TRANSISTOR smd
cmbt5551
MARKING SMD TRANSISTOR P
smd transistor 304
smd transistor marking g1
TRANSISTOR SMD g1
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5551 SILICON N–P–N HIGH–VOLTAGE TRANSISTOR N–P–N transisto r Marking CMBT5551 = G1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
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OT-23
CMBT5551
C-120
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Untitled
Abstract: No abstract text available
Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1
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Si5980DU
2002/95/EC
Si5980DUelectronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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marking code YS SMD
Abstract: No abstract text available
Text: Bulletin PD-20836 rev. C 02/07 16CTQ.GS 16CTQ.G-1 SCHOTTKY RECTIFIER 16 Amp IF AV = 16 Amp VR = 60/100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 16 A 60/ 100 V IFSM @ tp = 5 s sine 650 A
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PD-20836
16CTQ.
60/100V
16CTQ100
20E-04
43E-01
05E-02
16CTQ100
marking code YS SMD
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20835 rev. A 02/07 30CTQ.GS 30CTQ.G-1 SCHOTTKY RECTIFIER 30 Amp IF AV = 30 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary
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PD-20835
30CTQ.
O-262
O-220
O-262)
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40HF
Abstract: 43CTQ 43CTQ080G-1 43CTQ080GS 43CTQ100G-1 43CTQ100GS P460 SMD-220
Text: Bulletin PD-20834 rev. A 02/07 43CTQ.GS 43CTQ.G-1 SCHOTTKY RECTIFIER 40 Amp IF AV = 40 Amp VR = 80 - 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular waveform 40 A 80 - 100 V 850 A 0.67 V VRRM
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PD-20834
43CTQ.
O-262
O-220
O-262)
40HF
43CTQ
43CTQ080G-1
43CTQ080GS
43CTQ100G-1
43CTQ100GS
P460
SMD-220
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Untitled
Abstract: No abstract text available
Text: DMN5/L06VK/L06VAK/010VAK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Dual N-Channel MOSFET • • Low On-Resistance • • Very Low Gate Threshold Voltage, 1.0V max • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020
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DMN5/L06VK/L06VAK/010VAK
J-STD-020
MIL-STD-202,
DS30769
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"MARKING CODE M3"
Abstract: BF909 BF909R K 3053 TRANSISTOR
Text: BF909; BF909R N-channel dual gate MOS-FETs Rev. 02 — 19 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF909;
BF909R
"MARKING CODE M3"
BF909
BF909R
K 3053 TRANSISTOR
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qfn20
Abstract: QFN-20
Text: Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking Package MRFIC1870 1870 QFN-20 The MRFIC1870 is a single supply, RF power amplifier designed for the 2.0 W DCS/PCS
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MRFIC1870PP/D
MRFIC1870
QFN-20)
MRFIC1870
QFN-20
QFN-20
qfn20
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dual-gate
Abstract: BF1100 BF1100R marking code my
Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF1100;
BF1100R
BF1100
dual-gate
BF1100R
marking code my
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E4 marking
Abstract: No abstract text available
Text: DMC2004LPK Green COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage VGS th < 1V • • Low Input Capacitance • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020C
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DMC2004LPK
AEC-Q101
X1-DFN1612-6
J-STD-020C
DS30854
E4 marking
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Untitled
Abstract: No abstract text available
Text: BF1100; BF1100R Dual-gate MOS-FETs Rev. 02 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF1100;
BF1100R
BF1100
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Low Capacitance MOS FET 13005
Abstract: BF1205C
Text: BF1205C Dual N-channel dual gate MOS-FET Rev. 02 — 15 August 2006 Product data sheet 1. Product profile 1.1 General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
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BF1205C
BF1205C
OT363
Low Capacitance MOS FET 13005
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Untitled
Abstract: No abstract text available
Text: SBR140LP Green 1.0A SBR SUPER BARRIER RECTIFIER Features Mechanical Data • Ultra Low Forward Voltage Drop • • Excellent High Temperature Stability • • Patented Super Barrier Rectifier Technology • Soft, Fast Switching Capability • Moisture Sensitivity: Level 1 per J-STD-020D
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SBR140LP
J-STD-020D
MIL-STD-202,
X1-DFN1411-3
DS31404
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s1d13743
Abstract: VD16 S1D13743F00A2 REG-52H S1D13743F00A pd6122 c9142
Text: S1D13743 Mobile Graphics Engine Hardware Functional Specification Document Number: X70A-A-001-02 Status: Revision 2.7 Issue Date: 2010/05/18 SEIKO EPSON CORPORATION 2004 - 2010. All Rights Reserved. You may download and use this document, but only for your own use in evaluating Seiko Epson/EPSON products.
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S1D13743
X70A-A-001-02
S1D13743
X70A-A-001-00
VD16
S1D13743F00A2
REG-52H
S1D13743F00A
pd6122
c9142
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QFN-20
Abstract: MRFIC1870 20/MRFIC1870
Text: Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking Package MRFIC1870 1870 QFN-20 The MRFIC1870 is a single supply, RF power amplifier designed for the 2.0 W DCS/PCS
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MRFIC1870PP/D
MRFIC1870
QFN-20)
QFN-20
MRFIC1870
QFN-20
20/MRFIC1870
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1n4749a
Abstract: "Voltage Regulator Diodes" 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A
Text: 1N4728A to 1N4749A Voltage regulator diodes Rev. 02 — 30 October 2009 Product data sheet 1. Product profile 1.1 General description Low voltage regulator diodes in hermetically sealed small SOD66 DO-41 glass packages. The series consists of 22 types with nominal working voltages from 3.3 to 24 V.
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1N4728A
1N4749A
DO-41)
1n4749a
"Voltage Regulator Diodes"
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. Product Preview MRFIC1870PP/D Rev. 0, 02/2003 MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 QFN-20 Ordering Information Device Device Marking
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MRFIC1870PP/D
MRFIC1870
QFN-20)
QFN-20
MRFIC1870
QFN-20
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S3V 05
Abstract: No abstract text available
Text: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 2.9-0.3 M A X IM U M RATINGS Ta = 25°C v g id o VG2D0 v g is VG2S !G1 !G2 Pd Teh Tstg MARKING a M UN r o 3
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3SK240
S3V 05
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