DP500
Abstract: Transistor DN500
Text: DP500 Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500 • Switching Application Ordering Information Type NO. Marking Package Code DP500 DP500
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DP500
DN500
KST-9091-003
-500mA
-150mA
DP500
Transistor
DN500
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DN500
Abstract: DP500
Text: DP500 Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500 • Switching Application Ordering Information Type NO. Marking Package Code DP500 DP500
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DP500
DN500
KST-9091-000
-100mA
-150mA
-500mA
DN500
DP500
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DN500F
Abstract: DP500F
Text: DP500F Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500F • Switching Application Ordering Information Type NO. Marking DP500F Package Code P5
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DP500F
DN500F
OT-89
KST-8014-000
-100mA
-150mA
-500mA
DN500F
DP500F
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DN500P
Abstract: DP500P
Text: DP500P Semiconductor PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hF E Linearity • Complementary pair with DN500P • Switching Application Ordering Information Type NO. Marking DP500P P5□ Package Code
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DP500P
DN500P
OT-223
KST-7003-003
-500mA
-150mA
DN500P
DP500P
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2SA1512
Abstract: 2SC1788
Text: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage
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2SA1512
2SC1788
2SA1512
2SC1788
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2SC1788
Abstract: 2SA1512 transistor 2sa1512
Text: Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC1788 Unit: mm 3.0±0.2 4.0±0.2 • Features ■ Absolute Maximum Ratings Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage
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2SA1512
2SC1788
2SC1788
2SA1512
transistor 2sa1512
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Untitled
Abstract: No abstract text available
Text: DP500F Se m i c o nduc t o r PNP Silicon Transistor Description • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN500F • Switching Application Ordering Information Type NO. Marking DP500F Package Code
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DP500F
DN500F
DP500F
OT-89
KST-8014-003
500mA
150mA
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2SB1207
Abstract: No abstract text available
Text: Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage
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2SB1207
2SB1207
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2SC5343
Abstract: No abstract text available
Text: 2SC5343 SOT-23 TRANSISTOR SOT-23 Dimensions Unit:mm 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1 3 0.97Ref. NPN Epitaxial Silicon Transistor 0.4 1.9 Collector-Emitter Voltage: V CEO =40V 0.5Ref. 0.38Ref. MINO.1 0.01-0.10 Tolerance:0.1mm Marking 0.124±0.10 2 Collector Dissipation:Pc=225mW
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2SC5343
OT-23
OT-23
97Ref.
38Ref.
225mW
2SC5343
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2SD2321
Abstract: No abstract text available
Text: Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking ■ Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage
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2SD2321
2SD2321
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Untitled
Abstract: No abstract text available
Text: DP500 Semiconductor PNP Silicon Transistor Description • Suit able for low volt age large current drivers • Excellent h FE Linearity • Com plem ent ary pair wit h DN500 • Switching Application Ordering Information Type N O. Marking Pa ck a ge Code
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DP500
DN500
KST-9091-003
-500m
-150m
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2SD1450
Abstract: No abstract text available
Text: Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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2SD1450
2SD1450
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2SD1450
Abstract: vebo
Text: Transistor 2SD1450 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage
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2SD1450
2SD1450
vebo
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2SD2321
Abstract: 5021H
Text: Transistor 2SD2321 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 3.0±0.2 4.0±0.2 • Features marking ■ Absolute Maximum Ratings Ta=25˚C 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage
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2SD2321
2SD2321
5021H
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2sa 102 transistor
Abstract: A1862 transistor 2SA 101 LA marking code PNP transistor 2sa 102 2SA series a8cc marking code V6 69 2SA1862F5 transistor PNP
Text: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • • • available in CPT F5 (SC-63) package package marking: A1862*Q, where ★ is hFE code and □ is lot number 2SA1862F5 (CPT F5) high breakdown voltage, typically 60 B V Ce o = -4 0 0 V •
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2SA1862F5
SC-63)
A1862
A/-100
2sa 102 transistor
transistor 2SA 101
LA marking code PNP transistor
2sa 102
2SA series
a8cc
marking code V6 69
2SA1862F5
transistor PNP
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2SA 016
Abstract: A1834 2SA series transistor transistor B 560
Text: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,
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2SA1834F5
SC-63)
A1834
2SC5001
2SA1834F5
2SA 016
2SA series transistor
transistor B 560
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H9 transistor marking
Abstract: transistor h9
Text: 2SA1807F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: A 1 80 7*Q , where ★ is hFE code and □ is lot number • 2.3 Ö u> 51 -01 r• r « H9 SS • high breakdown voltage, BVq £q = —600 V
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2SA1807F5
SC-63)
A/-60
2SA1807F5
H9 transistor marking
transistor h9
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP598B TOSHIBA PHOTOCOUPLER T I P PHOTO RELAY •; Q f t R Unit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MQS FE1T in a
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TLP598B
TLP598B
200mA
2500Vrms
ULI577,
E67349
150mA
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP598A TOSHIBA PHOTOCOUPLER T I P PHOTO RELAY •> Q f t A Unit in mm T E LE C O M M U N IC A TIO N D A T A ACQ UISITIO N M EASUREM ENT IN STRUM ENTATIO N The TOSHIBA TLP598A consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MQS FE1T in a
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TLP598A
TLP598A
300mA
2500Vrms
ULI577,
E67349
CLASSIFICATION100
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E1115
Abstract: No abstract text available
Text: MICRON SE MICONDUCTOR INC b?E D BB fe1115 4'ì OOOTHSfl STT tB MRN ADVANCE MT5LC1001 1 MEG X 1 SRAM M IC R O N SRAM 1 MEG X 1 SRAM LOW VOLTAGE • All I /O pins are 5V tolerant • High speed: 15,17,20,25, 35 and 45ns • High-performance, low-power, CMOS double-metal
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e1115
MT5LC1001
28-Pin
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B1304
Abstract: cl9100 FE050N FE150N FE150N9 UL-1950 1vw marking code
Text: Data Sheet July 1998 Lucent Technologies Bell Labs Innovations FE050N and FE150N Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5.2 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FE050N
FE150N
FE050N9
FE150N9
005002b
B1304
cl9100
UL-1950
1vw marking code
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Untitled
Abstract: No abstract text available
Text: Lucent Technologies Bell Labs Innovations FE050N and FE150N Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 5.2 Vdc Output; 50 W to 150 W Features • High efficiency: 82% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FE050N
FE150N
FE050N9
FE150N9
FE050N
FE150N
005002b
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150R Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 28 Vdc Output; 150 W Features • High efficiency: 85% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FE150R
FE150R9
FE150R
005005b
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE150F Power Module: dc-dc Converter; 38 Vdc to 60 Vdc Input, 3.3 Vdc Output; 99 W Features • High efficiency: 75% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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FE150F
FE150F9
FE150F
005002b
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