1j capacitor
Abstract: HP16034E HP4192A HP4192
Text: KC three-terminal inductor/capacitor EU features • • • • • Compact physical dimensions Excellent wave reduction control Exceptional EMI attenuation Excellent as impedance matching for signal lines Marking: Brown and black body color with no marking 1J & 2AF
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DC25V
DC200mA
1j capacitor
HP16034E
HP4192A
HP4192
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L9014
Abstract: L9015QLT1G L9015RLT1G L9015SLT1G
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015XLT1G FEATURE 3 ƽComplementary to L9014. ƽ We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping
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L9015XLT1G
L9014.
L9015QLT1G
3000/Tape
L9015QLT3G
10000/Tape
L9015RLT1G
L9015RLT3G
L9014
L9015QLT1G
L9015RLT1G
L9015SLT1G
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bourns 3296
Abstract: transistor d 4515 d 4515 marking t counterfeit
Text: TRIMPOT PRODUCTS March, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers 3296 Laser Marking Bourns is pleased to announce a product update to the Model 3296. The new laser marking meets all
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amplifier for piezo sensor
Abstract: Micronas hall sensor marking
Text: DATA SHEET MICRONAS Edition Oct. 19, 2004 6251-439-2DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 DATA SHEET Contents Page Section Title 3 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.2.1. 1.3. 1.4. 1.5. 1.6. Introduction Features Marking Code Special Marking of Prototype Parts
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HAL320
6251-439-2DS
HAL320
amplifier for piezo sensor
Micronas
hall sensor marking
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csr2te
Abstract: marking 10L0
Text: 1733 Reader's Spreads pg1-203:document 1/27/09 4:04 PM Page 44 CSR resistors four-terminal current sense resistor EU features • • • • • Extremely low resistance and high precision tolerance Low T.C.R. achieved ±50ppm/°C Flameproof UL94V0 Marking: Black body color with white marking
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50ppm/
UL94V0
660-CSR1LTED33L0F
CSR1LTED33L0F
csr2te
marking 10L0
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controls
Abstract: No abstract text available
Text: June, 2005 Sensors & Controls Division Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team S RS TROL O S N SEN& CO Sensors & Controls Product Marking Upgrade In line with our commitment to product excellence, Sensors & Controls is introducing a product marking
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m1a transistor
Abstract: IE 500 SBT42 SBT92
Text: SBT42 Semiconductor NPN Silicon Transistor Descriptions • High voltage application • Telephone application Features • Collector-Emitter voltage VCEO=SBT42 : 300V • Complementary pair with SBT92 Ordering Information Type NO. Marking SBT42 Package Code
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SBT42
SBT92
OT-23
KST-2040-002
m1a transistor
IE 500
SBT42
SBT92
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MMBT5551A
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain . 2 1 3 MARKING G1 SOT-23 *Pb-free plating product number:MMBT5551L PIN CONFIGURATION
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MMBT5551
OT-23
MMBT5551L
MMBT5551-AE3-R
MMBT5551L-AE3-R
OT-23
QW-R206-010
MMBT5551A
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STA92N
Abstract: STC42N T0-92N
Text: STA92N Semiconductor PNP Silicon Transistor Descriptions • High voltage application Features • High collector-emitter voltage : VCEO=-300V • Complementary pair with STC42N Ordering Information Type NO. Marking Package Code STA92N STA92 T0-92N Outline Dimensions
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STA92N
-300V
STC42N
STA92
T0-92N
KSD-T0C029-001
STA92N
STC42N
T0-92N
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marking G1 sot23 UTC
Abstract: No abstract text available
Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR
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MMBT5551
OT-23
QW-R206-010,
marking G1 sot23 UTC
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KSC2982
Abstract: No abstract text available
Text: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking
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KSC2982
OT-89
KSC2982
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CNY70
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area The CNY70 is a reflective sensor that includes an infrared emitter and phototransistor in a leaded package which blocks visible light. E D Features • •
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CNY70
CNY70
2002/95/EC
2002/96/EC
18-Jul-08
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BD135
Abstract: No abstract text available
Text: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU
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BD135
BD136,
BD138
BD140
O-126
BD13516S
BD1356STU
BD13510STU
BD13516STU
BD13716STU
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N1802
Abstract: STN1802
Text: STN1802 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking STN1802 N1802 VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM
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STN1802
N1802
OT-223
OT-223
N1802
STN1802
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j13009
Abstract: No abstract text available
Text: FJA13009 High-Voltage Switch Mode Application Features • High-Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method FJA13009TU J13009 TO-3P
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FJA13009
FJA13009TU
J13009
j13009
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Untitled
Abstract: No abstract text available
Text: KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-Base Voltage: VCBO = -50 V • Complement to KSC1815 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Marking Package Packing Method KSA1015GRTA
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KSA1015
KSC1815
KSA1015GRTA
A1015
KSA1015YTA
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking
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OCR Scan
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I03ff.
169ff.
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PDF
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SAI SOT23
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors SMBTA 55 SMBTA 56 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 05, SMBTA 06 NPN Type Marking Ordering Code (tape and reel) PinC Contigui•ation 1 2 3 Package1)
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OCR Scan
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Q68000-A3386
Q68000-A2882
OT-23
SAI SOT23
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bo 947
Abstract: BDP947C dp947
Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B
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BDP948,
BDP950
BDP947
Q62702-D1335
Q62702-D1337
OT-223
OT-223
300ns;
bo 947
BDP947C
dp947
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transistor d 1825 7c
Abstract: CE040
Text: SIEMENS PNP Silicon Transistor SMBTA 70 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinCtonfigu ration 1 2 3 Package1) SMBTA 70 S2C Q62702-M0003
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Q62702-M0003
OT-23
EHP0086I
EHP00861
EHP00664
transistor d 1825 7c
CE040
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marking BSs sot23
Abstract: marking DKs marking BSs sot23 siemens
Text: SIEMENS PNP Silicon AF and Switching Transistors • • • • BCX42 BSS 63 For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX 41, BSS 64 NPN Type Marking Ordering Code (tape and reel) Pin Configuration
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BCX42
Q62702-C1485
Q62702-S534
OT-23
42/aSS
BSS63
marking BSs sot23
marking DKs
marking BSs sot23 siemens
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TRANSISTOR S1d
Abstract: AX 1101
Text: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type
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Q62702-A1243
SCT-595
EHP00844
TRANSISTOR S1d
AX 1101
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93 sot223 marking
Abstract: 93 MARKING
Text: SIEMENS PNP Silicon High-Voltage Transistors PZTA 92 PZTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: PZTA 42, PZTA43 NPN Type Marking Ordering Code (tape and reel) Pin Coni igural ion 2 1 3 4 Package1)
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OCR Scan
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PZTA43
Q62702-Z2037
Q62702-Z2038
OT-223
EHP0073J
EHP007J4
93 sot223 marking
93 MARKING
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MAR 641 TRANSISTOR
Abstract: bfw92a mar 617
Text: Temic BFW92A Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features • High power gain • Low noise figure BFW92A Marking: BFW92A Plastic case TO 50 1= Collector; 2= Emitter; 3= Base Absolute Maximum Ratings
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BFW92A
BFW92A
26-Mar-97
MAR 641 TRANSISTOR
mar 617
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