C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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Untitled
Abstract: No abstract text available
Text: DB LECTRO Inc. SMAJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 TO 170 Volts 400Watts Peak Pulse Power SMAJ PART NUMBER DEVICE MARKING CODE UNI-POLAR BI-POLAR UNI BI SMAJ5.0A SMAJ6.0A SMAJ6.5A SMAJ7.0A SMAJ7.5A SMAJ8.0A SMAJ8.5A SMAJ9.0A
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400Watts
SMAJ10A
SMAJ11A
SMAJ12A
SMAJ13A
SMAJ14A
SMAJ15A
SMAJ16A
SMAJ17A
SMAJ18A
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pmf7
Abstract: No abstract text available
Text: PMF 200W Series SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 180 Volts 200 Watt Peak Pulse Power " * " 标注为常用型号 " * " Stand for commonly used models REVER DEVICE BREAKDOW MARKING SESTAND N VOLTAGE PART NUMBER -OFF CODE
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PMF10A
PMF11A
PMF12A
PMF13A
PMF14A
PMF15A
PMF16A
PMF17A
PMF18A
PMF19A
pmf7
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOSFET Tetrode BF 964 S • For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners Type Marking Ordering Code BF 964 S - Q62702-F446 Pin Configuration 1 2 3 4 S D Gz Package1 Gì
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Q62702-F446
EHT07163
6235b05
BF964S
EHM07007
fl235bOS
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ERC01
Abstract: SV 04f
Text: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc
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ERC01
ERC01
SV 04f
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ERA32
Abstract: T460 T151 T760 marking code CV3
Text: ERA32 ia • ftîfê '+ fè : Outline* Drawings FAST RECOVERY DIODE *3 T . \ — 28MIN — ¿08. 1 5 -28MIN— Features Super high speed switching. • 1&Vf Low VF ’ Marking A f - J - K : tt Color • a ftfttt High reliability code : Orange >> Abridged type name
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ERA32
28MIN
28MINâ
I95t/R89)
Shl50
T460
T151
T760
marking code CV3
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ERA82-004
Abstract: P151 T151 T810 T930 a316
Text: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na
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ERA82-004
l95t/R89
P151
T151
T810
T930
a316
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Untitled
Abstract: No abstract text available
Text: •I bbS3T31 0024342 762 W A P X N AUER PHI LIPS/DISCRETE BAT54A; C; S b7E D yv SCHOTTKY BARRIER DIODE Silicon epitaxial Schottky Barrier double diodes with an integrated p-n junction protection ring in a microminiature SOT-23 envelope intended for surface mounting.
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bbS3T31
BAT54A;
OT-23
UBB175
BAT54A
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Untitled
Abstract: No abstract text available
Text: f-yVW Pto S W B a î / T 8: / * Aluminium Electrolytic Chip Capacitors V & G 's 'J - X Aluminium Electrolytic Chip Capacitors Type V Series G • i$ÜEfc£PH1 : 105 °C 1000 h m I Features • P ro d u c t line-up o f 0 8 , 010 • 0 8 , 0 1 O p h 7 'Í > T - / y ’ lZ ¿ T # * $ S |í
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M39029/101-553
Abstract: No abstract text available
Text: REV ECN APP'D 5277 JT 12-28-05 6078/ t VT~ s //*YVJ - A 4X R.050 MAX 3 X 0 .1 5 0 .150 TYP .500 -GASKET SUPPLIED WITH RELAY PIN MARKING PER TABLE RELAY PHILLIPS MTG SCREW, S.S. CONICAL SPRING COMPRESSED DAJE C0DE 1. MATERIALSSOCKET BODY: POLYETHERIMIDE PER ASTM-D-5205
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ASTM-D-5205
MIL-PRF-12883/44.
M39029/101-553
JRE400110
JRE400101
JRE400100
JRE400111
17-Mar-04
E400100
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Untitled
Abstract: No abstract text available
Text: 7 1 1 D Ô 2 b G G b a 3 7 T 630 » P H I N BB619 yv. VHF VARIABLE CAPACITANCE DIODE The BB619 is a VHF variable capacitance diode in planar technology with a very high capacitance ratio intended for VHF-band B up to 460 MHz in all-band tuners. The diode is encapsulated in a hermetically sealed SOD123 plastic envelope suitable fo r surface mounting.
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BB619
BB619
OD123
OD123.
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Untitled
Abstract: No abstract text available
Text: • bbSBTBl D024415 b3S W A P X N AMER PHI LIP S/DISCRETE BB620 b7E D yv VHF VARIABLE CAPACITANCE DIODE The BB620 is a VHF variable capacitance diode in planar technology w ith a very high capacitance ratio intended fo r VHF-band A up to 160 MHz in all-band tuners.
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D024415
BB620
BB620
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Untitled
Abstract: No abstract text available
Text: BBY39 yv DOUBLE VARIABLE CAPACITANCE DIODE The B B Y 3 9 is a double variable capacitance diode with a common cathode and mounted in a micro miniature envelope SOT-23 , suitable for surface mounting. The two diodes in one envelope are matched. The device is intended for application in electronic tuners in satellite T V systems.
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BBY39
OT-23)
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Transistor p1f
Abstract: No abstract text available
Text: • b b S B ' m 002Sflfl0 TTfl B A P X N AUER PHILIPS/DISCRETE PMBT5550 b7E T> yv SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor fo r general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.
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002Sflfl0
PMBT5550
OT-23
Transistor p1f
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UCU20C16
Abstract: CK200 NIHON PULSE
Text: # y 20A 160V 30ns F^^E-y Fast Recovery Cathode common Similar to TO-263 UCU20C16 Nihon Inter Electronics Corporation Specification. mm izmmyy =*yv'i Diffusion Type Silicon Diode Application High Frequency Rectification Ü x ^ Æ .fê ' frd MAXIMUM RATINGS Ta=25°C: Unless otherwise specified
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O-263
UCU20C16
c40-3
UL94V-0
UCU20Crj
UCU20C16
CK200
NIHON PULSE
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Untitled
Abstract: No abstract text available
Text: • bbS3^3i ooesa'ii a?3 * apx N AMER PHILIPS/DISCRETE b7E » PMBTA42 PMBTA43 yv SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature SMD plastic envelope intended fo r surface mounted applica tions. They are primarily intended for use in telephony and professional communication equipment.
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PMBTA42
PMBTA43
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BSR19A
Abstract: No abstract text available
Text: • bbSB^Bl 0DE5Sfl5 &E7 H A P X N AMER PHI LIPS/ DISCRE TE b7E T> BSR19 BSR19A yv SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.
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BSR19
BSR19A
OT-23
BSR20
BSR20A.
BSR19
bb53T31
00255A7
BSR19A
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