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    MARKING CODE VV TRANSISTORS Search Results

    MARKING CODE VV TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE VV TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT890-1

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse


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    PDF OD-123+ 060TYP 118TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH SOT890-1

    marking code VV transistors

    Abstract: No abstract text available
    Text: MIC7211/7221 Micrel, Inc. MIC7211/7221 IttyBitty Rail-to-Rail Input Comparator Final Information General Description Features The MIC7211 and MIC7221 are micropower comparators featuring rail-to-rail input performance in Micrel’s IttyBitty™ SOT-23-5 package. The MIC7211/21 is ideal for systems


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    PDF MIC7211/7221 MIC7211 MIC7221 OT-23-5 MIC7211/21 marking code VV transistors

    marking code VV transistors

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process


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    PDF OT-89 OD-123+ 060TYP M180-MH FM1100-MH FM1150-MH FM1200-MH FM120-MH FM130-MH FM140-MH marking code VV transistors

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1979G Silicon NPN epitaxial planar type For low frequency amplification For muting For DC-DC converter • Features • Low ON resistance Ron • High forward current transfer ratio hFE


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    PDF 2002/95/EC) 2SD1979G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features • Low ON resistance Ron • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.


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    PDF 2002/95/EC) 2SD2623G

    2SD2210G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter • Features ■ Package • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SD2210G 2SD2210G

    2SD2623

    Abstract: XN01558G marking va transistors 2sd26
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01558G Silicon NPN epitaxial planar type For low-frequency amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features • Code Mini5-G2 • Pin Name 1: Collector (Tr1)


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    PDF 2002/95/EC) XN01558G 2SD2623 2SD2623 XN01558G marking va transistors 2sd26

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1979G Silicon NPN epitaxial planar type • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g


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    PDF 2002/95/EC) 2SD1979G

    2sd1915F

    Abstract: 2SD1915
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04506G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For amplification of low-frequency output • Package ■ Features • Code Mini6-G3 • Pin Name


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    PDF 2002/95/EC) XN04506G 2sd1915F 2SD1915

    2SD1328

    Abstract: XN04504G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04504G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For amplification of low-frequency output • Package ■ Features ■ Basic Part Number • 2SD1328 x 2


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    PDF 2002/95/EC) XN04504G 2SD1328 2SD1328 XN04504G

    2SD2623G

    Abstract: 2sd26
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter


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    PDF 2002/95/EC) 2SD2623G 2SD2623G 2sd26

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package ■ Features • Low collector-emitter saturation voltage VCE(sat) , optimum for the


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    PDF 2002/95/EC) UNR5225G, UNR5226G UNR5225G UNR5226G

    2SD2210G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-voltage output amplification For muting For DC-DC converter • Package • Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SD2210G 2SD2210G

    DSC4501

    Abstract: MARKING CODE E3t marking code VV transistors MARKINGCODEE3t
    Text: DSC4501 Tentative Total pages page DSC4501 Silicon NPN epitaxial planar type For low-frequency amplification Marking Symbol : E3 Package Code : NS-B1-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)


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    PDF DSC4501 DSC4501 MARKING CODE E3t marking code VV transistors MARKINGCODEE3t

    2SD2623G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2623G Silicon NPN epitaxial planar type For low-frequency amplification • Features ■ Package • Code SMini3-F2 • Marking Symbol: 2V • Pin Name 1: Base 2: Emitter 3: Collector


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    PDF 2002/95/EC) 2SD2623G 2SD2623G

    ic MARKING FZ

    Abstract: UNR5225G UNR5226G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR5225G, UNR5226G Silicon NPN epitaxial planar type For muting • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Resistance by Part Number • UNR5225G


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    PDF 2002/95/EC) UNR5225G, UNR5226G UNR5225G ic MARKING FZ UNR5225G UNR5226G

    eltek smps 1000 si 48v

    Abstract: eltek smps 600 24v smps circuit using ka3842 Marking Code SMD CM sot-23-5 AS Eltek smps 250 smps power circuit using ka3842 pwm schematic inverter uc2844 atx power supply UC3842 diagram uc3844 schematic diagram 24v dc dc UC3843 smps diagrams
    Text: You are in Databook Vol. 3 • Click for Main Menu Product Categories CLICK ANY ITEM Return to Main Menu Volume 3 Table of Contents Volume 3 Part Number and App. Note/Hint Index General Information PC Card Power Protected Switches Low-Dropout Linear Voltage Regulators


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    PDF 400mW 625mW MIC5204BS OT-223 MIC5204 eltek smps 1000 si 48v eltek smps 600 24v smps circuit using ka3842 Marking Code SMD CM sot-23-5 AS Eltek smps 250 smps power circuit using ka3842 pwm schematic inverter uc2844 atx power supply UC3842 diagram uc3844 schematic diagram 24v dc dc UC3843 smps diagrams

    2SC1412

    Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
    Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type


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    PDF 2SA1037AK SC-88A -50/iA -50pA --12V, AC221 2SC1412 VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK

    SMBT4403

    Abstract: SMBT5401 SMBT4401 marking 2G SOT23
    Text: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401


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    PDF OT-23 SMBT2222A SMBT3904 SMBT4401 SMBTA05 SMBTA06 SMBT5551 SMBTA42 OT-23 SMBT4403 SMBT5401 marking 2G SOT23

    marking code VV transistors

    Abstract: PNP TRANSISTOR "SOT89" marking aa
    Text: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes


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    PDF BCX51 BCX52; BCX53 BCX54, BCX55 BCX56. BCX51 BCX51-10 BCX51-16 BCX52 marking code VV transistors PNP TRANSISTOR "SOT89" marking aa

    Untitled

    Abstract: No abstract text available
    Text: PNP Silicon Darlington Transistors 32E D • flE 3 b 3 S G SIEMENS/ • • • • BCV 26 Q01bbb2 3 H SIP BCV46 SPCLi SEMICONDS For general A F applications High collector current High current gain Complementary types: B C V 27, B C V 47 NPN Type a B C V 26


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    PDF Q01bbb2 BCV46 Q62702-C1151 Q62702-C1153 Q62702-C1493 Q62702-C1475 3b35Q BCV26

    Untitled

    Abstract: No abstract text available
    Text: BEE D • flS 3 b 3 2 Q 0G172ÔÜ S « S IP PNP Silicon A F Transistors SIEM EN S/ • • • SPC L-i T ' - l ' i - J *7 SEM ICO N DS _ SMBTA55 S M B T A 56 High breakdown voltage Low oollector-emitter saturation voltage Complementary types: S M B T A 05, S M B TA 06 NPN


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    PDF 0G172Ã SMBTA55 Q68000-A7420 Q68000-A7421 Q68000-A3386 Q68000-A2882 BTA55 23b320 /JFE-10

    f747

    Abstract: No abstract text available
    Text: NPN Silicon High-Voltage Transistors • • • • BFN24 BFN26 Suitable fo r video o u tp u t stages in TV sets and sw itch in g pow er supplies High breakdow n voltage Low co lle c to r-e m itte r saturation voltage C om plem entary typ e s: BFN 25, BFN 27 PNP


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    PDF BFN24 BFN26 62702-F747 62702-F750 Q62702-F1065 Q62702-F976 f747

    bc849

    Abstract: No abstract text available
    Text: BC846 THRU BC849 Small Signal Transistors NPN FEATURES SOT-23 •122 (3.1) .118 (3.0) 016 (0.4) ♦ NPN Silicon Epitaxial Planar Transistors fo r switching and AF am plifier applications. ♦ Especially suited fo r autom atic insertion in th ick- and thin-film circuits.


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    PDF BC846 BC849 OT-23 BC847 BC848 BC849 BC856. BC859 BC846.