B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
|
Original
|
PDF
|
GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
|
V8P10
Abstract: No abstract text available
Text: V8P10 New Product Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A FEATURES • Very low profile - typical height of 1.1 mm K • Ideal for automated placement • Trench MOS Schottky Technology
|
Original
|
PDF
|
V8P10
O-277A
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
V8P10
|
TO-277
Abstract: to-277A V810 schottky V810 V810 mo V8P10 JESD22-B102D J-STD-002B TO277 TO-277A weight
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A FEATURES TMBS eSMPTM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
O-277A
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
TO-277
to-277A
V810 schottky
V810
V810 mo
V8P10
JESD22-B102D
J-STD-002B
TO277
TO-277A weight
|
V810 mo
Abstract: V8P10 to-277A V810 v810 diode JESD22-B102 J-STD-002
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
J-STD-020,
O-277A
2002/95/EC
2002/96/EC
08-Apr-05
V810 mo
V8P10
to-277A
V810
v810 diode
JESD22-B102
J-STD-002
|
Untitled
Abstract: No abstract text available
Text: V8PM12-M3, V8PM12HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES • Very low profile - typical height of 1.1 mm TMBS eSMP® Series Available
|
Original
|
PDF
|
V8PM12-M3,
V8PM12HM3
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: V8PAL45 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement TMBS SMPATM • Trench MOS Schottky technology • Low power losses, high efficiency
|
Original
|
PDF
|
V8PAL45
J-STD-020,
DO-221BC
AEC-Q101
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: V8P12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES ® TMBS eSMP Series • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement
|
Original
|
PDF
|
V8P12
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: V8P8-M3, V8P8HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
|
Original
|
PDF
|
O-277A
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: V8P6-M3, V8P6HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
|
Original
|
PDF
|
O-277A
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
V810 schottky diode
Abstract: No abstract text available
Text: V8P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
J-STD-020,
AEC-Q101
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V810 schottky diode
|
Untitled
Abstract: No abstract text available
Text: V8P45-M3, V8P45HM3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm Available
|
Original
|
PDF
|
V8P45-M3,
V8P45HM3
O-277A
AEC-Q101
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
Untitled
Abstract: No abstract text available
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
J-STD-020,
O-277A
22-A111
2002/95/EC
2002/96/EC
18-Jul-08
|
V8P10
Abstract: No abstract text available
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
08-Apr-05
V8P10
|
J-STD-002
Abstract: V810 V8P10 V8P10-M3
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
J-STD-020,
O-277A
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
J-STD-002
V810
V8P10
V8P10-M3
|
|
|
V810 mo
Abstract: JESD22-B102 J-STD-002 V810 V8P10 v8p10-m3
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series K 1 2 TO-277A SMPC Anode 1 K Cathode Anode 2 PRIMARY CHARACTERISTICS IF(AV)
|
Original
|
PDF
|
V8P10
O-277A
18-Jul-08
V810 mo
JESD22-B102
J-STD-002
V810
V8P10
v8p10-m3
|
V8P10
Abstract: No abstract text available
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP TM Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
18-Jul-08
V8P10
|
Untitled
Abstract: No abstract text available
Text: New Product V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P12
O-277A
J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: V8P15 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement
|
Original
|
PDF
|
V8P15
AEC-Q101
O-277A
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: V8PM10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm Available • Ideal for automated placement
|
Original
|
PDF
|
V8PM10
AEC-Q101
O-277A
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: V8P10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
AEC-Q101
O-277A
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at IF = 4 A FEATURES TMBS ® eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P12
J-STD-020,
O-277A
AEC-Q101
2002/95/EC
2002/96/EC
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product V8P20 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 4 A FEATURES TMBS ® eSMP Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P20
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
11-Mar-11
|
J-STD-002
Abstract: V810 V8P10
Text: New Product V8P10 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.466 V at IF = 4 A TMBS eSMP® Series FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
V8P10
AEC-Q101
O-277A
2002/95/EC
2002/96/EC
J-STD-020,
11-Mar-11
J-STD-002
V810
V8P10
|
Untitled
Abstract: No abstract text available
Text: V8PL6-M3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 4 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement
|
Original
|
PDF
|
J-STD-020,
O-277A
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
