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    MARKING CODE TSM2311CX SOT23 Search Results

    MARKING CODE TSM2311CX SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING CODE TSM2311CX SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET P-Channel sot-23

    Abstract: TSM2311CX A1 SOT-23 MOSFET P-CHANNEL
    Text: TSM2311 20V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2311 OT-23 TSM2311CX OT-23 MOSFET P-Channel sot-23 A1 SOT-23 MOSFET P-CHANNEL

    TSM2311

    Abstract: TSM2311CX marking code TSM2311CX SOT23 p-channel SOT-23 20V
    Text: TSM2311 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -20 Features ID (A) 55 @ VGS = -4.5V -4.0 85 @ VGS = -2.5V -2.5 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM2311 OT-23 TSM2311CX TSM2311 marking code TSM2311CX SOT23 p-channel SOT-23 20V