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    MARKING CODE NG FAIRCHILD Search Results

    MARKING CODE NG FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    MARKING CODE NG FAIRCHILD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680 FDD marking
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 FDD marking PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS6609A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		FDS6609A PDF

    CBVK741B019

    Abstract: F63TNR FDD6030BL FDD6680
    Text: FDD6030BL N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the onstate resistance and yet maintain low gate charge for


    Original     		FDD6030BL O-252 CBVK741B019 F63TNR FDD6030BL FDD6680 PDF

    Untitled

    Abstract: No abstract text available
    Text: SI9426DY Single N-Channel, 2.5V Specified MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet


    Original     		SI9426DY PDF

    6680

    Abstract: d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935
    Text: FDD6630A N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDD6630A O-252 6680 d-pak DEVICE MARKING CODE table CBVK741B019 F63TNR FDD6630A FDD6680 FZ9935 PDF

    D2Pak Package dimensions

    Abstract: transistor equivalent table fdb6021p CBVK741B019 FDB6021P FDP6021P FDP7060
    Text: FDP6021P/FDB6021P 20V P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • –28 A, –20 V. RDS ON = 30 mΩ @ VGS = 4.5 V


    Original     		FDP6021P/FDB6021P O-220 O-263AB 25opment. D2Pak Package dimensions transistor equivalent table fdb6021p CBVK741B019 FDB6021P FDP6021P FDP7060 PDF

    9933A

    Abstract: Si9933ADY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z marking code ng Fairchild
    Text: Si9933ADY Dual P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		Si9933ADY 9933A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z marking code ng Fairchild PDF

    SI4532DY

    Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    4963 soic8

    Abstract: 4963 MOSFET
    Text: Si4963DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		Si4963DY 4963 soic8 4963 MOSFET PDF

    si9934

    Abstract: No abstract text available
    Text: Si9934DY Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		Si9934DY si9934 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDS6890A PDF

    a7840

    Abstract: fdfs6n303
    Text: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and


    Original     		FDFS6N303 a7840 fdfs6n303 PDF

    CBVK741B019

    Abstract: F63TNR FDD6680 FDD6690A
    Text: FDD6690A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior


    Original     		FDD6690A O-252 CBVK741B019 F63TNR FDD6680 FDD6690A PDF

    FDS*6609A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		FDS6609A FDS*6609A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    8 pin ic 9435

    Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
    Text: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		Si9435DY 8 pin ic 9435 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435 PDF

    FDS4435A

    Abstract: L86Z CBVK741B019 F011 F63TNR F852 FDS9953A
    Text: FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		FDS4435A FDS4435A L86Z CBVK741B019 F011 F63TNR F852 FDS9953A PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8425
    Text: NDS8425 Single N-Channel, 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain low gate


    Original     		NDS8425 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8425 PDF

    4431 SOIC-8

    Abstract: 4431 mosfet 4431 soic8 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z Si4431DY
    Text: Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain


    Original     		Si4431DY 4431 SOIC-8 4431 mosfet 4431 soic8 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS4435A FDS9953A L86Z
    Text: FDS4435A P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		FDS4435A CBVK741B019 F011 F63TNR F852 FDS4435A FDS9953A L86Z PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS6614A FDS9953A L86Z
    Text: FDS6614A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.


    Original     		FDS6614A CBVK741B019 F011 F63TNR F852 FDS6614A FDS9953A L86Z PDF

    CBVK741B019

    Abstract: F63TNR FDD6680 FDD6680A
    Text: FDD6680A N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior


    Original     		FDD6680A O-252 CBVK741B019 F63TNR FDD6680 FDD6680A PDF

    FDS9926A

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: FDS9926A Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs use Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage


    Original     		FDS9926A FDS9926A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z PDF

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		FDS9412 PDF