BAV74
Abstract: No abstract text available
Text: BAV74 Dual Surface Mount Switching Diode SOT-23 Features For high-speed switching appilication. Common cathode. Applications Small signal switching Ordering Information Dimensions in inches and millimeters Type No. Marking Package Code BAV74 JA
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BAV74
OT-23
BAV74
100mA
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Untitled
Abstract: No abstract text available
Text: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features • Low On-Resistance • 29m @VGS = 4.5V • 50m @VGS = 2.5V 100m @VGS = 2.0V Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
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DMN2050L
J-STD-020D
MIL-STD-202,
DS31502
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Untitled
Abstract: No abstract text available
Text: DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) Package -20V 110mΩ @ VGS = -4.5V 225mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -2.6A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching
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DMP2225L
AEC-Q101
DS31461
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Untitled
Abstract: No abstract text available
Text: DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • 25mΩ @ VGS = 4.5V • 29mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V Low Input Capacitance Fast Switching Speed Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.
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DMG6968U
J-STD-020
MIL-STD-202,
DS31738
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Untitled
Abstract: No abstract text available
Text: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G Low current SCR Low thermal resistance
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FS01xxxA)
OT-223
FS01xxxN)
OT23-3L
2011/65/EU
2002/96/EC
J-STD-020,
FS01xxxL)
OT-223
/SOT23-3L)
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Untitled
Abstract: No abstract text available
Text: FS01 SENSITIVE GATE SCR On-State Current Gate Trigger Current 0.8 Amp < 200 µA Off-State Voltage 400 V ÷ 600 V TO-92 FS01xxxA FEATURES Glass/passivated die junctions SOT-223 (FS01xxxN) K G A A K SOT23-3L A G Low current SCR Low thermal resistance
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FS01xxxA)
OT-223
FS01xxxN)
OT23-3L
2011/65/EU
2002/96/EC
J-STD-020,
FS01xxxL)
OT-223
/SOT23-3L)
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dmp2100u
Abstract: 35P marking DMP2100U-7
Text: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMP2100U
AEC-Q101
DS35718
dmp2100u
35P marking
DMP2100U-7
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PBRP113ZT
Abstract: PBRN113ZT
Text: PBRP113ZT PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
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PBRP113ZT
O-236AB)
PBRN113ZT.
PBRP113ZT
PBRN113ZT
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PBRP123YT
Abstract: SOT23 NXP power dissipation TO-236AB PBRN123YT marking 41 sot23 nxp
Text: PBRP123YT PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
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PBRP123YT
O-236AB)
PBRN123YT.
PBRP123YT
SOT23 NXP power dissipation TO-236AB
PBRN123YT
marking 41 sot23 nxp
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PBRN123ET
Abstract: PBRP123ET SOT23 NXP power dissipation TO-236AB
Text: PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
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PBRP123ET
O-236AB)
PBRN123ET.
PBRP123ET
PBRN123ET
SOT23 NXP power dissipation TO-236AB
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smd TRANSISTOR code marking 7k sot23
Abstract: PBRP113ET PBRN113ET
Text: PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
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PBRP113ET
O-236AB)
PBRN113ET.
PBRP113ET
smd TRANSISTOR code marking 7k sot23
PBRN113ET
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PBSS5140T
Abstract: TRANSISTOR SMD MARKING CODES PBSS4140T NXP TRANSISTOR SMD MARKING CODE SOT23
Text: PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS5140T
O-236AB)
PBSS4140T.
PBSS5140T
TRANSISTOR SMD MARKING CODES
PBSS4140T
NXP TRANSISTOR SMD MARKING CODE SOT23
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 1.6 @ VGS= 4.5V
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DMN62D1SFB
DS35252
DMN62D1SFB
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smd code marking ft sot23
Abstract: PBSS4032PT marking "td" sot23
Text: PBSS4032NT 30 V, 2.6 A NPN low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032NT
O-236AB)
PBSS4032PT.
AEC-Q101
PBSS4032NT
smd code marking ft sot23
PBSS4032PT
marking "td" sot23
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PBSS4021PT
Abstract: pbss4021nt
Text: PBSS4021NT 20 V, 4.3 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4021NT
O-236AB)
PBSS4021PT.
AEC-Q101
PBSS4021NT
PBSS4021PT
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Untitled
Abstract: No abstract text available
Text: PBSS4032PT 30 V, 2.4 A PNP low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032PT
O-236AB)
PBSS4032NT.
AEC-Q101
PBSS4032PT
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marking C25 SOT23-5
Abstract: 16V16 TK63135 marking code C33 TK63133 TK63118S
Text: [TK631xxB/H/S] TK631xxH/S CMOS LDO Regulator 1-. DESCRIPTION 4-. PIN CONFIGURATION The TK631xxH/S is a CMOS LDO regulator. The packages are the small and thin SON2017-6, and the extremely versatile SOT23-5. The IC is designed for portable applications with space
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TK631xxB/H/S]
TK631xxH/S
TK631xxH/S
SON2017-6,
OT23-5.
SON2017-6
TK631xxH)
SON2017-6
OT23-5
AP-MS0037-E-00
marking C25 SOT23-5
16V16
TK63135
marking code C33
TK63133
TK63118S
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Untitled
Abstract: No abstract text available
Text: PBSS4032NT 30 V, 2.6 A NPN low VCEsat BISS transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4032NT
O-236AB)
PBSS4032PT.
AEC-Q101
PBSS4032NT
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Untitled
Abstract: No abstract text available
Text: PBSS4021NT 20 V, 4.3 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4021NT
O-236AB)
PBSS4021PT.
AEC-Q101
PBSS4021NT
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pbss4041nt
Abstract: PBSS4041PT
Text: PBSS4041NT 60 V, 3.8 A NPN low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4041NT
O-236AB)
PBSS4041PT.
AEC-Q101
PBSS4041NT
PBSS4041PT
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Untitled
Abstract: No abstract text available
Text: PBSS4041PT 60 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 31 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
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PBSS4041PT
O-236AB)
PBSS4041NT.
AEC-Q101
PBSS4041PT
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TRANSISTOR SMD MARKING CODE JSs
Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with
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PMBF170
TRANSISTOR SMD MARKING CODE JSs
smd JSs transistor
TRANSISTOR SMD MARKING CODE DM
TRANSISTOR SMD MARKING CODE pKX
smd code pKX
smd JSs
SMD CODE TRANSISTOR JA
smd transistor FY
smd transistor marking PA
6 pin TRANSISTOR SMD CODE PA
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Untitled
Abstract: No abstract text available
Text: t.bSB'm DOSSfllO b74 • APX PMBF170 N AUER PHILIPS/DISCRETE b7E D _ J \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a
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PMBF170
bb53T31
00ES81E
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