STMicroelectronics smd marking code
Abstract: BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CRP/04/744 LEAD-FREE CONVERSION PROGRAM Compliance with RoHS 1 1 RoHS = Restriction of the use of certain Hazardous Substances European directive 2002/95/EC November 18, 2004 Page 1/12 2004 STMicroelectronics - All Rights Reserved
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CRP/04/744
2002/95/EC)
STMicroelectronics smd marking code
BGA and QFP Package 14x14
STMICROELECTRONICS MSL
STMicroelectronics date code tssop-14
HiQuad package
STMicroelectronics pentawatt date code
opto mold compound
infineon msl
TQFP 14X20
ST TSSOP Marking
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STMicroelectronics smd marking code
Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
Text: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product
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MLD-MIC/05/943
MLD-MIC/05/943
STMicroelectronics smd marking code
smd marking code stmicroelectronics
BGA bga 10x13
BGA 15X15
BGA 23X23
HEPTAWATT SMD
Marking STMicroelectronics tqfp
INFINEON package tqfp PART MARKING
PLCC Part Marking STMicroelectronics
Date Code Marking STMicroelectronics PACKAGE DPAK
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63-Ball
Abstract: fbe063-63-ball ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation
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Am29LV640M
16-Bit
16-Bit/8
128-word/256-byte
8-word/16-byte
63-ball
TS056
LAA064
fbe063-63-ball
ei 306 20 64
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MBM29LV800TA-70PF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA
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DS05-20845-6E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0211
MBM29LV800TA-70PF
FPT-48P-M19
FPT-48P-M20
MBM29LV800BA-70PFTN cost
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L640ML12P
Abstract: 64 fortified bga ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations
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Am29LV640MH/L
16-Bit/8
128-word/256-byte
8-word/16-byte
TS056
TSR056
L640ML12P
64 fortified bga
ei 306 20 64
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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SUPER CHIP
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
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DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
SUPER CHIP
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
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DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0207
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Am29LV256MH
Abstract: 64-ball ei 306 20 64
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
LAA064
Am29LV256MH
64-ball
ei 306 20 64
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CSR2930800BA
Abstract: FPT-48P-M19
Text: Rev. 1.1 FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT CSR2930800BA-90 • DESCRIPTION The CSR2930800BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. TheCSR2930800BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA packages.
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8/512K
CSR2930800BA-90
CSR2930800BA
TheCSR2930800BA
48-pin
44-pin
48-ball
B48012S-c-3-3
FPT-48P-M19
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
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LAA064-64-ball
Abstract: transistor marking A21 amd part marking marking E5 ei 306 20 64
Text: ADVANCE INFORMATION Am29LV128M 128 Megabit 8 M x 16-Bit/16 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV128M
16-Bit/16
128-word/256-byte
8-word/16-byte
LAA064--64-Ball
LAA064-64-ball
transistor marking A21
amd part marking
marking E5
ei 306 20 64
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LAA064-64-ball
Abstract: TS056-56-Pin TSR056-56-Pin ei 306 20 64
Text: ADVANCE INFORMATION Am29LV128M 128 Megabit 8 M x 16-Bit/16 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV128M
16-Bit/16
128-word/256-byte
8-word/16-byte
LAA064--64-Ball
LAA064-64-ball
TS056-56-Pin
TSR056-56-Pin
ei 306 20 64
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L256ML
Abstract: transistor marking A21 uAM29LV256M L256MH12V amd part marking L256mh LAA064 Product Selector Guide
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
TS056
LAA064
L256ML
transistor marking A21
uAM29LV256M
L256MH12V
amd part marking
L256mh
Product Selector Guide
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-4E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
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048-48-Pin
Abstract: transistor marking A21 fbe063-63-ball 63-Ball AMD K7 data sheet diode MARKING A9 marking E5 TSR048-48-Pin FBE063 48-pin TSOP standard outline
Text: ADVANCE INFORMATION Am29LV065M 64 Megabit 8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV065M
256-byte
16-byte
048-48-Pin
transistor marking A21
fbe063-63-ball
63-Ball
AMD K7 data sheet
diode MARKING A9
marking E5
TSR048-48-Pin
FBE063
48-pin TSOP standard outline
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV256M 64 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 2.7–3.6 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/64-byte
8-word/16-byte
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jedec mo-142
Abstract: g6 amd LAA064-64-ball
Text: ADVANCE INFORMATION Am29LV128M 128 Megabit 8 M x 16-Bit/16 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV128M
16-Bit/16
128-word/256-byte
8-word/16-byte
TS056
TSR056
jedec mo-142
g6 amd
LAA064-64-ball
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g6 amd
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV128M 128 Megabit 8 M x 16-Bit/16 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV128M
16-Bit/16
128-word/256-byte
8-word/16-byte
TS056
TSR056
g6 amd
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LAA064
Abstract: g6 amd
Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV256M
16-Bit/32
128-word/256-byte
8-word/16-byte
TS056
TSR056
64-byte
256-byte.
LAA064
g6 amd
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Untitled
Abstract: No abstract text available
Text: MBM29LV800TA-70/-90 MBM29LV800BA-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV800TA-70/-90
MBM29LV800BA-70/-90
F0211
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-6E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20862-6E
8/256K
MBM29LV400TC/BC-55/70/90
48-pin
44-pin
48-ball
F0211
FPT-48P-M19
FPT-48P-M20
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20862-7E FLASH MEMORY CMOS 4M 512K x 8/256K × 16 BIT MBM29LV400TC/BC-55/70/90 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20862-7E
8/256K
MBM29LV400TC/BC-55/70/90
48-pin
44-pin
48-ball
F0302
FPT-48P-M19
FPT-48P-M20
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sa29 pinout
Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
Text: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs
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OCR Scan
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48-pin
46-pin
48-ball
D-63303
F97010
sa29 pinout
29LV160T
TOP SIDE MARKING m03
29LV160
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