Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
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Am29DL640D
16-Bit)
256od)
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S29JL064H
Abstract: S29PL064J 29F400 flash
Text: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL640H
S29JL064H
S29PL064J
AM29DL320H
S29JL064H
S29PL064J
29F400 flash
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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AM29DL640G
Abstract: S29JL064H S29PL064J
Text: Am29DL640G Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL640G as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical
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Am29DL640G
S29JL064H
S29PL064J
S29JL064H
S29PL064J
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LV065MU
Abstract: 101R 120R
Text: Am29LV640MU Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29LV640MU
LV065MU
101R
120R
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Untitled
Abstract: No abstract text available
Text: Am29DL640H Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL640H
48-ball
64-ball
63-ball
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Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV640D/Am29LV641D
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eeprom parallel st
Abstract: No abstract text available
Text: Am29DL640H Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29DL640H
eeprom parallel st
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Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV640D/Am29LV641D
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Untitled
Abstract: No abstract text available
Text: Am29LV640MU Data Sheet For new designs, S29GL064M supersedes Am29LV640MU and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV640MU
S29GL064M
S29GLxxxM
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Spansion S29JL064
Abstract: No abstract text available
Text: S29JL064H 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Data Sheet S29JL064H Cover Sheet For new designs involving Fine-pitch Ball Grid Array (FBGA) packages, S29PL064J supersedes S29JL064H and is the factory
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S29JL064H
16-Bit)
S29JL064H
S29PL064J
S29PL-J
Spansion S29JL064
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101R
Abstract: 120R 121R AM29LV065DU101R AM29LV065DU120R AM29LV065DU121R AM29LV065DU90R ei 280000
Text: Am29LV065D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29LV065D
101R
120R
121R
AM29LV065DU101R
AM29LV065DU120R
AM29LV065DU121R
AM29LV065DU90R
ei 280000
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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Untitled
Abstract: No abstract text available
Text: Am29LV065D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileIOTM control — Device generates output voltages and tolerates input
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Am29LV065D
256-byte
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amd part marking
Abstract: S29JL064H S29PL064J
Text: Am29DL640D Data Sheet For new designs involving TSOP packages, S29JL064H supersedes Am29DL640D and is the factory-recommended migration path. Please refer to the S29JL064H datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL064J supersedes Am29DL640D and is the
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Am29DL640D
S29JL064H
S29PL064J
amd part marking
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LV065MU
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV065MU 64 Megabit 8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV065MU
256-byte
16-byte
LV065MU
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LV065MU
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV640MU 64 Megabit 4 M x 16-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations
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Am29LV640MU
16-Bit)
128-word
Am29LV640MH/L
LV640MH/L)
LV065MU
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l640du90r
Abstract: L640DU90RI L640DU90
Text: PRELIMINARY Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
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Am29LV640D/Am29LV641D
16-Bit)
128-word
56-pin
Am29LV640DH/DL
l640du90r
L640DU90RI
L640DU90
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Untitled
Abstract: No abstract text available
Text: Am29DL640D 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank.
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Am29DL640D
16-Bit)
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Untitled
Abstract: No abstract text available
Text: Am29LV640D/Am29LV641D 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 3.0 to 3.6 volt read, erase, and program operations ■ VersatileI/O control
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Am29LV640D/Am29LV641D
16-Bit)
128-word
64-ball
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A15F6
Abstract: AM29LV641DL90
Text: ADVANCE INFORMATION Am29LV640DU/Am29LV641DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read, erase, and program operations
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Am29LV640DU/Am29LV641DU
16-Bit)
128-word
56-pin
A15F6
AM29LV641DL90
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV065MU 64 Megabit 8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV065MU
256-byte
16-byte
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29LV641
Abstract: 29LV640D
Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
TSR048--
16-038-TS48
TSR048
29LV640D
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29lv641
Abstract: No abstract text available
Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations
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Am29LV640DU/Am29LV641
16-Bit)
48-pin
56-pin
Am29LV640DU/Am
29LV641
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